Method of OPC model building, information-processing apparatus, and method of determining process conditions of semiconductor device
    1.
    发明授权
    Method of OPC model building, information-processing apparatus, and method of determining process conditions of semiconductor device 有权
    OPC模型建立方法,信息处理设备及确定半导体器件工艺条件的方法

    公开(公告)号:US08788981B2

    公开(公告)日:2014-07-22

    申请号:US12062133

    申请日:2008-04-03

    IPC分类号: G06F17/50

    CPC分类号: G03F7/70625 G03F1/36 G03F1/68

    摘要: In a method and apparatus for quantitatively evaluating two-dimensional patterns, a reference coordinate system is set in order to convert pattern edge information (one-dimensional data) acquired by measurement using an existing critical dimension machine into coordinate data. Thus, a pattern is converted into coordinate information. Next, a function formula is determined from this coordinate information by approximate calculation and a pattern is represented by the mathematical expression y=f(x). Integrating y=f(x) in the reference coordinate used when calculating the coordinate data gives the area of the pattern, whereby it is possible to convert the coordinate data to two-dimensional data.

    摘要翻译: 在用于定量评估二维图案的方法和装置中,设置参考坐标系以将通过使用现有关键维度机器的测量获得的图案边缘信息(一维数据)转换为坐标数据。 因此,将图案转换为坐标信息。 接下来,通过近似计算从该坐标信息确定函数式,并且通过数学表达式y = f(x)表示图案。 在计算坐标数据时使用的参考坐标中集合y = f(x)给出了图案的面积,由此可以将坐标数据转换为二维数据。

    Method of OPC Model Building, Information-Processing Apparatus, and Method of Determining Process Conditions of Semiconductor Device
    2.
    发明申请
    Method of OPC Model Building, Information-Processing Apparatus, and Method of Determining Process Conditions of Semiconductor Device 有权
    OPC模型构建方法,信息处理设备及确定半导体器件工艺条件的方法

    公开(公告)号:US20080250380A1

    公开(公告)日:2008-10-09

    申请号:US12062133

    申请日:2008-04-03

    IPC分类号: G06F17/50

    CPC分类号: G03F7/70625 G03F1/36 G03F1/68

    摘要: A method capable of quantitatively evaluating two-dimensional patterns and a system to which the method is applied are provided. In the present invention, a reference coordinate system is set in order to convert pattern edge information (one-dimensional data) acquired by measurement using an existing critical dimension machine into coordinate data. Thus, a pattern is converted into coordinate information. Next, a function formula is determined from this coordinate information by approximate calculation and a pattern is represented by the mathematical expression y=f(x). Integrating y=f(x) in the reference coordinate used when calculating the coordinate data gives the area of the pattern, whereby it is possible to convert the coordinate data to two-dimensional data.

    摘要翻译: 提供了能够定量评估二维图案的方法和应用该方法的系统。 在本发明中,设定基准坐标系,以便通过使用现有的关键尺寸的机器将测量获得的图案边缘信息(一维数据)转换为坐标数据。 因此,将图案转换为坐标信息。 接下来,通过近似计算从该坐标信息确定函数式,并且通过数学表达式y = f(x)表示图案。 在计算坐标数据时使用的参考坐标中集合y = f(x)给出了图案的面积,由此可以将坐标数据转换为二维数据。

    Method for adjusting imaging magnification and charged particle beam apparatus
    3.
    发明授权
    Method for adjusting imaging magnification and charged particle beam apparatus 有权
    调整成像倍率和带电粒子束装置的方法

    公开(公告)号:US07834316B2

    公开(公告)日:2010-11-16

    申请号:US12043942

    申请日:2008-03-06

    IPC分类号: G06K9/48

    摘要: There is provided a method for setting a suitable imaging magnification for each of a plurality of measurement places in a charged particle beam apparatus which images a semiconductor pattern.For a given measuring point coordinate, a line segment or a vertex representing a change in concavity and convexity near the measuring point coordinate is searched, and an imaging magnification is set so that coordinates on a sample corresponding to both ends which gives a length that serves as a reference falls in a field of view of the charged particle beam apparatus by letting a minimum distance be the reference, of distances between line segments representing a change in concavity and convexity from the measuring point coordinate or a distance between neighboring vertexes.

    摘要翻译: 提供了一种用于为对半导体图案进行成像的带电粒子束装置中的多个测量位置中的每一个设置合适的成像倍率的方法。 对于给定的测量点坐标,搜索表示测量点坐标附近的凹凸的变化的线段或顶点,并且设置成像倍率,使得对应于给出服务的长度的两端的样本上的坐标 作为参考,通过使最小距离作为参考,在距离表示距离测量点坐标的凹凸变化的线段之间的距离或相邻顶点之间的距离处落在带电粒子束装置的视野中。

    Method for adjusting imaging magnification and charged particle beam apparatus
    4.
    发明授权
    Method for adjusting imaging magnification and charged particle beam apparatus 失效
    调整成像倍率和带电粒子束装置的方法

    公开(公告)号:US08552371B2

    公开(公告)日:2013-10-08

    申请号:US12917703

    申请日:2010-11-02

    IPC分类号: G01N23/04

    摘要: There is provided a method for setting a suitable imaging magnification for each of a plurality of measurement places in a charged particle beam apparatus which images a semiconductor pattern.For a given measuring point coordinate, a line segment or a vertex representing a change in concavity and convexity near the measuring point coordinate is searched, and an imaging magnification is set so that coordinates on a sample corresponding to both ends which gives a length that serves as a reference falls in a field of view of the charged particle beam apparatus by letting a minimum distance be the reference, of distances between line segments representing a change in concavity and convexity from the measuring point coordinate or a distance between neighboring vertexes.

    摘要翻译: 提供了一种用于为对半导体图案进行成像的带电粒子束装置中的多个测量位置中的每一个设置合适的成像倍率的方法。 对于给定的测量点坐标,搜索表示测量点坐标附近的凹凸的变化的线段或顶点,并且设置成像倍率,使得对应于给出服务的长度的两端的样本上的坐标 作为参考,通过使最小距离作为参考,在距离表示距离测量点坐标的凹凸变化的线段之间的距离或相邻顶点之间的距离处落在带电粒子束装置的视野中。