公开(公告)号：US20210074653A1

公开(公告)日：2021-03-11

申请号：US17012010

申请日：2020-09-03

申请人： Miki TRIFUNOVIC ,  Aditi CHANDRA ,  Robert FULLER ,  Raymond VASS ,  Patricia BECK ,  Mao ITO ,  Arvind KAMATH

发明人： Miki TRIFUNOVIC ,  Aditi CHANDRA ,  Robert FULLER ,  Raymond VASS ,  Patricia BECK ,  Mao ITO ,  Arvind KAMATH

IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L23/14 ,  H01L23/15 ,  H01L23/29 ,  H01L23/31 ,  H01L21/48 ,  B81B7/00 ,  H01L27/12 ,  H01M2/02

摘要： Embodiments of the disclosure pertain to a multi-layer barrier for a flexible substrate supporting electronic and/or microelectromechanical system (MEMS) devices. Apparatuses including a substrate, a first metal nitride layer, a first oxide layer on or over the first metal nitride layer, a second metal nitride layer and a second oxide layer on or over the first oxide layer, and a device layer on or over the first oxide layer or both the first and second oxide layers are disclosed. When the device layer is on or over the first oxide layer, the second metal nitride layer is on or over the device layer, and the second oxide layer is on or over the on or over the second metal nitride layer. When the device layer is on or over both the first and second oxide layers, the second metal nitride layer is on or over the second oxide layer. A method of making the same is also disclosed.