公开(公告)号：US20060005761A1

公开(公告)日：2006-01-12

申请号：US11145626

申请日：2005-06-06

申请人： Milind Kulkarni ,  Vijay Nithiananthan ,  Lee Ferry ,  JaeWoo Ryu ,  JinYong Uhm ,  Steven Kimbel ,  ChangBum Kim ,  Joseph Holzer ,  Richard Schrenker ,  KangSeon Lee

发明人： Milind Kulkarni ,  Vijay Nithiananthan ,  Lee Ferry ,  JaeWoo Ryu ,  JinYong Uhm ,  Steven Kimbel ,  ChangBum Kim ,  Joseph Holzer ,  Richard Schrenker ,  KangSeon Lee

IPC分类号： C30B15/00 ,  C30B15/30 ,  C30B21/06 ,  C30B27/02

CPC分类号： C30B29/06 ,  C30B15/22 ,  C30B15/30 ,  Y10T117/1008 ,  Y10T117/1052

摘要： The present invention provides a methods and system for producing semiconductor grade single crystals that are substantially free of undesirable agglomerated defects. A vacancy/interstial (V/I) boundary simulator analyzes various melt-solid interface shapes to predict a corresponding V/I transition curve for each of the various melt-solid interface shapes. A target melt-solid interface shape corresponding to a substantially flat V/I curve is identified for each of a plurality of axial positions along the length of the crystal. Target operating parameters to achieve each of the identified melt-solid interface shapes are stored in a melt-solid interfaced shape profile. A control system is responsive to the stored profile to generate one or more control signals to control one or more output devices such that the melt-solid interfaced shape substantially follows the target shapes as defined by the profile during crystal growth.

摘要翻译： 本发明提供了一种生产半导体级单晶的方法和系统，其基本上没有不希望的附聚缺陷。 空位/间隙（V / I）边界模拟器分析各种熔体 - 固体界面形状，以预测各种熔体 - 固体界面形状的相应V / I过渡曲线。 对于沿着晶体长度的多个轴向位置中的每一个，识别对应于基本上平坦的V / I曲线的目标熔体 - 固体界面形状。 实现每个识别的熔体 - 固体界面形状的目标操作参数被存储在熔体 - 固体界面形状轮廓中。 控制系统响应于存储的轮廓以产生一个或多个控制信号以控制一个或多个输出装置，使得熔体 - 固体接合形状基本上遵循在晶体生长期间由轮廓限定的目标形状。