公开(公告)号：US09484198B1

公开(公告)日：2016-11-01

申请号：US14687474

申请日：2015-04-15

Applicant: Ming Chi University of Technology

Inventor： Chen-Te Chang ,  Yung-Chin Yang ,  Jyh-Wei Lee

IPC: H01L21/02

CPC classification number: C23C14/0617 ,  C23C14/0036 ,  C23C14/345 ,  C23C14/3485

Abstract: A method for physical vapor deposition of an aluminum nitride film, comprising: positioning a substrate and an aluminum target in a chamber; vacuuming the chamber so that a chamber pressure is at a base pressure between 7.1×10−7-5×10−6 torr; conducting a working gas composed of argon gas and nitrogen gas into the chamber so that the chamber pressure is at a working pressure between 3-7 mtorr; and depositing the aluminum nitride film on the substrate by applying a high power impulse power supply to the aluminum target and applying a direct current bias power supply to the substrate under the working pressure and a substrate temperature between room temperature (25° C.) to 200° C.; wherein a power of the high power impulse power supply is between 500-600 W and a frequency thereof is between 750-1250 Hz, and a bias of the direct current bias power supply is between −50-0 V.

Abstract translation: 一种用于氮化铝膜的物理气相沉积的方法，包括：将基底和铝靶定位在腔室中; 对腔室进行抽真空，使得腔室压力在7.1×10-7-5×10-6乇之间的基础压力; 将由氩气和氮气组成的工作气体引入室中，使得室压力在3-7mtorr之间的工作压力; 以及通过向铝靶施加大功率脉冲电源并在工作压力和基板温度（室温（25℃）至+ 25℃）之间向衬底施加直流偏压电源，将氮化铝膜沉积在衬底上 200°C。 其中高功率脉冲电源的功率在500-600W之间，其频率在750-1250Hz之间，直流偏置电源的偏压在-50-0V之间。

公开(公告)号：US20160307749A1

公开(公告)日：2016-10-20

申请号：US14687474

申请日：2015-04-15

Applicant: Ming Chi University of Technology

Inventor： Chen-Te Chang ,  Yung-Chin Yang ,  Jyh-Wei Lee

IPC: H01L21/02

CPC classification number: C23C14/0617 ,  C23C14/0036 ,  C23C14/345 ,  C23C14/3485

Abstract: A method for physical vapor deposition of an aluminum nitride film, comprising: positioning a substrate and an aluminum target in a chamber; vacuuming the chamber so that a chamber pressure is at a base pressure between 7.1×10−7-5×10−6 torr; conducting a working gas composed of argon gas and nitrogen gas into the chamber so that the chamber pressure is at a working pressure between 3-7 mtorr; and depositing the aluminum nitride film on the substrate by applying a high power impulse power supply to the aluminum target and applying a direct current bias power supply to the substrate under the working pressure and a substrate temperature between room temperature (25° C.) to 200° C.; wherein a power of the high power impulse power supply is between 500-600 W and a frequency thereof is between 750-1250 Hz, and a bias of the direct current bias power supply is between −50-0 V.

Abstract translation: 一种用于氮化铝膜的物理气相沉积的方法，包括：将基底和铝靶定位在腔室中; 对腔室进行抽真空，使得腔室压力在7.1×10-7-5×10-6乇之间的基础压力; 将由氩气和氮气组成的工作气体引入室中，使得室压力在3-7mtorr之间的工作压力; 以及通过向铝靶施加大功率脉冲电源并在工作压力和基板温度（室温（25℃）至+ 25℃）之间向衬底施加直流偏压电源，将氮化铝膜沉积在衬底上 200°C。 其中高功率脉冲电源的功率在500-600W之间，其频率在750-1250Hz之间，直流偏置电源的偏压在-50-0V之间。