公开(公告)号：US20090317982A1

公开(公告)日：2009-12-24

申请号：US12142414

申请日：2008-06-19

申请人： Ming Yen Li ,  Hsiao Che Wu ,  De Long Chen ,  Wen Li Tsai

发明人： Ming Yen Li ,  Hsiao Che Wu ,  De Long Chen ,  Wen Li Tsai

IPC分类号： H01L21/31 ,  C23C16/00

CPC分类号： H01L21/0228 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45544 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/3141 ,  H01L21/31604

摘要： An atomic layer deposition apparatus comprises a reaction chamber, a heater configured to heat a semiconductor wafer positioned on the heater, an oxidant supply configured to deliver oxidant-containing precursors having different oxidant concentrations to the reaction chamber, and a metal supply configured to deliver a metal-containing precursor to the reaction chamber. The present application also discloses a method for preparing a dielectric structure comprising the steps of placing a substrate in a reaction chamber, performing a first atomic layer deposition process including feeding an oxidant-containing precursor having a relatively lower oxidant concentration and a metal-containing precursor to form an thinner interfacial layer on the substrate, and performing a second atomic layer deposition process including feeding the oxidant-containing precursor having an oxidant concentration higher than that used to grow the first metal oxide layer and the metal-containing precursor into the reaction chamber.

摘要翻译： 原子层沉积装置包括反应室，被配置为加热位于加热器上的半导体晶片的加热器，被配置为将具有不同氧化剂浓度的含氧化剂的前体输送到反应室的氧化剂供应源，以及被配置为输送 含金属的前体到反应室。 本申请还公开了一种制备电介质结构的方法，包括以下步骤：将基底放置在反应室中，执行第一原子层沉积工艺，包括进料含氧化剂浓度较低的含氧化剂的前体和含金属的前体 在衬底上形成较薄的界面层，并且执行第二原子层沉积工艺，包括将氧化剂浓度高于用于将第一金属氧化物层和含金属的前体生长的氧化剂浓度进料到反应室中 。