公开(公告)号：US08044721B2

公开(公告)日：2011-10-25

申请号：US12535699

申请日：2009-08-05

申请人： Ming-Ching Kuo ,  Chien-Nan Kuo ,  Shiau-Wen Kao

发明人： Ming-Ching Kuo ,  Chien-Nan Kuo ,  Shiau-Wen Kao

IPC分类号： H03F3/04

CPC分类号： H03F3/45179 ,  H03F2200/294 ,  H03F2200/534 ,  H03F2203/45306 ,  H03F2203/45311 ,  H03F2203/45562 ,  H03F2203/45621 ,  H03F2203/45644

摘要： A low noise amplifier including an amplifier kernel circuit and a DC bias unit is provided. The amplifier kernel circuit is used for receiving a single input signal or a differential input signal so as to output a differential output signal. The DC bias unit is coupled to the amplifier kernel circuit, and is used for processing a signal source to generate the single input signal or the differential input signal according to its circuit configuration.

摘要翻译： 提供了包括放大器内核电路和直流偏置单元的低噪声放大器。 放大器内核电路用于接收单个输入信号或差分输入信号，以输出差分输出信号。 DC偏置单元耦合到放大器核心电路，并用于根据其电路配置处理信号源以产生单个输入信号或差分输入信号。

公开(公告)号：US20100308914A1

公开(公告)日：2010-12-09

申请号：US12535699

申请日：2009-08-05

申请人： Ming-Ching Kuo ,  Chien-Nan Kuo ,  Shiau-Wen Kao

发明人： Ming-Ching Kuo ,  Chien-Nan Kuo ,  Shiau-Wen Kao

IPC分类号： H03F3/45

CPC分类号： H03F3/45179 ,  H03F2200/294 ,  H03F2200/534 ,  H03F2203/45306 ,  H03F2203/45311 ,  H03F2203/45562 ,  H03F2203/45621 ,  H03F2203/45644

摘要： A low noise amplifier including an amplifier kernel circuit and a DC bias unit is provided. The amplifier kernel circuit is used for receiving a single input signal or a differential input signal so as to output a differential output signal. The DC bias unit is coupled to the amplifier kernel circuit, and is used for processing a signal source to generate the single input signal or the differential input signal according to its circuit configuration.

摘要翻译： 提供了包括放大器内核电路和直流偏置单元的低噪声放大器。 放大器内核电路用于接收单个输入信号或差分输入信号，以输出差分输出信号。 DC偏置单元耦合到放大器核心电路，并用于根据其电路配置处理信号源以产生单个输入信号或差分输入信号。

公开(公告)号：US20090170456A1

公开(公告)日：2009-07-02

申请号：US12126941

申请日：2008-05-26

申请人： Chien-Nan Kuo ,  Horng-Yuan Shih ,  Yi-Hsin Pang

发明人： Chien-Nan Kuo ,  Horng-Yuan Shih ,  Yi-Hsin Pang

IPC分类号： H04B1/18

CPC分类号： H04B1/0053

摘要： A front-end circuit with coherent tunable filters is provided. The circuit includes a first filter, an amplifier, and a second filter. The amplifier is coupled to the first filter, and the second filter is coupled to the amplifier. Furthermore, the amplifier is placed between the first and second filters. The first filter has a first tunable intermediate frequency, and is used to filter a received signal. The amplifier is used to amplify the output of the first filter. The second filter has a second tunable intermediate frequency, and is used to filter the output of the amplifier. The first and second intermediate frequencies have a coherent-tuning relation with each other.

摘要翻译： 提供了具有相干可调谐滤波器的前端电路。 电路包括第一滤波器，放大器和第二滤波器。 放大器耦合到第一滤波器，第二滤波器耦合到放大器。 此外，放大器被放置在第一和第二滤光器之间。 第一滤波器具有第一可调谐中频，并用于对接收信号进行滤波。 放大器用于放大第一个滤波器的输出。 第二个滤波器具有第二个可调谐的中频，用于对放大器的输出进行滤波。 第一和第二中频具有彼此的相干调谐关系。

公开(公告)号：US07531887B2

公开(公告)日：2009-05-12

申请号：US11226989

申请日：2005-09-15

申请人： Chien-Nan Kuo ,  Chien-Chia Ma

发明人： Chien-Nan Kuo ,  Chien-Chia Ma

IPC分类号： H01L29/82

CPC分类号： H01L27/016 ,  H01L23/5223 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A miniature inductor suitable for integrated circuits comprises a semiconductor substrate having a coplanar strip line and a plurality of metal-insulator-metal (MIM) capacitors, wherein the plurality of MIM capacitors are connected between the transmission lines of the coplanar strip line in parallel, and the coplanar strip line connected with the MIM capacitors further comprises a crossed planar strip line structure or a shifted planar strip line structure. The present invention reduces the occupied area for an inductor by adding the MIM capacitors and folding the transmission lines, and alleviates the quality factor degradation of the inductor caused by substrate loss.

摘要翻译： 适用于集成电路的微型电感器包括具有共面带状线和多个金属 - 绝缘体 - 金属（MIM）电容器的半导体衬底，其中多个MIM电容器并联连接在共面带状线的传输线之间， 并且与MIM电容器连接的共面带状线还包括交叉平面带状线结构或移位的平面带状线结构。 本发明通过添加MIM电容器并折叠传输线来减少电感器的占用面积，并且减轻由于衬底损耗引起的电感器的质量因素劣化。

公开(公告)号：US20110187420A1

公开(公告)日：2011-08-04

申请号：US12730312

申请日：2010-03-24

申请人： Chien-Nan Kuo ,  Tzu-Chao Yan

发明人： Chien-Nan Kuo ,  Tzu-Chao Yan

IPC分类号： H03B19/00

CPC分类号： H03B19/00

摘要： The present invention provides a method for identifying a specific number of communicating points having relatively smallest accumulated path values from a plurality of transmitting points for a receiving point in a communication system. The method includes steps of: (a) defining a first coordination of each of the plurality of transmitting points and the receiving point on a complex plane; (b) transferring the first coordination of the receiving point to a second coordination thereof, in which the second coordination of the receiving point is near an origin of the complex plane; and (c) identifying the specific number of transmitting points having relatively smallest accumulated path values based on the second coordination of the receiving point.

摘要翻译： 本发明提供一种用于从通信系统中的接收点的多个发送点识别具有相对较小的累积路径值的通信点的特定数量的方法。 该方法包括以下步骤：（a）定义复平面上的多个发射点和接收点中的每一个的第一协调; （b）将接收点的第一协调转移到其接收点的第二协调接近复平面的原点的第二协调; 和（c）基于接收点的第二协调来识别具有相对较小的累积路径值的发送点的具体数量。

公开(公告)号：US20080299700A1

公开(公告)日：2008-12-04

申请号：US11754355

申请日：2007-05-28

申请人： Bang-Chiang Lan ,  Tzung-I Su ,  Chien-Nan Kuo ,  Chao-An Su ,  Heng-Ching Lin ,  Shih-Wei Li ,  Wei-Chin Hung

发明人： Bang-Chiang Lan ,  Tzung-I Su ,  Chien-Nan Kuo ,  Chao-An Su ,  Heng-Ching Lin ,  Shih-Wei Li ,  Wei-Chin Hung

IPC分类号： H01L21/00

CPC分类号： H01L31/103 ,  H01L27/14603 ,  H01L27/14689 ,  H01L31/1804 ,  Y02E10/547

摘要： A method of fabricating photodiode includes: a substrate comprising a well is provided, next, a first doping region is formed in the well, following that a conductive layer is formed on the surface of the first doping region by an epitaxial growth process, meanwhile, the conductive layer is in-situ doped to form a second doping region in the conductive layer. The method for fabricating the photodiode in the present invention can prevent the lattice structure from being damaged during the high dozes implantation process. Therefore, the dark current can be reduced and the sensitivity of the photodiode will be increased.

摘要翻译： 制造光电二极管的方法包括：提供包括阱的衬底，接下来，在阱中形成第一掺杂区，随后通过外延生长工艺在第一掺杂区的表面上形成导电层，同时， 导电层被原位掺杂以在导电层中形成第二掺杂区域。 本发明的光电二极管的制造方法，能够防止高度的植毛过程中晶格结构的损伤。 因此，可以减小暗电流，并且增加光电二极管的灵敏度。

公开(公告)号：US07839199B2

公开(公告)日：2010-11-23

申请号：US12356402

申请日：2009-01-20

申请人： Chien-Nan Kuo ,  Huan-Sheng Chen

发明人： Chien-Nan Kuo ,  Huan-Sheng Chen

IPC分类号： G06F7/44

CPC分类号： G06F7/68

摘要： A circuit and a method for implementing frequency tripled I/Q signals are proposed, including receiving two input I/Q signals through frequency multipliers so as to generate two frequency multiplied signals and mixing the input I/Q signals and the corresponding frequency multiplied signals through mixers for generating and outputting two I/Q signals with a frequency three times that of the input I/Q signals. The invention eliminates the requirement for high amplitude of the input signals as in the prior art and has lower power consumption and broader bandwidth and can be used as high frequency signal sources in any single chip processes.

摘要翻译： 提出了一种用于实现三倍频I / Q信号的电路和方法，包括通过频率乘法器接收两个输入I / Q信号，以产生两个倍频信号，并将输入的I / Q信号和相应的倍频信号通过 用于产生和输出三倍于输入I / Q信号频率的两个I / Q信号的混频器。 本发明消除了如现有技术中对输入信号的高幅度的要求，并且具有较低的功耗和更宽的带宽，并且可以在任何单个芯片工艺中用作高频信号源。

公开(公告)号：US08237472B2

公开(公告)日：2012-08-07

申请号：US12730312

申请日：2010-03-24

申请人： Chien-Nan Kuo ,  Tzu-Chao Yan

发明人： Chien-Nan Kuo ,  Tzu-Chao Yan

IPC分类号： H03B19/00

CPC分类号： H03B19/00

摘要： The present invention provides a method for identifying a specific number of communicating points having relatively smallest accumulated path values from a plurality of transmitting points for a receiving point in a communication system. The method includes steps of: (a) defining a first coordination of each of the plurality of transmitting points and the receiving point on a complex plane; (b) transferring the first coordination of the receiving point to a second coordination thereof, in which the second coordination of the receiving point is near an origin of the complex plane; and (c) identifying the specific number of transmitting points having relatively smallest accumulated path values based on the second coordination of the receiving point.

摘要翻译： 本发明提供一种用于从通信系统中的接收点的多个发送点识别具有相对较小的累积路径值的通信点的特定数量的方法。 该方法包括以下步骤：（a）定义复平面上的多个发射点和接收点中的每一个的第一协调; （b）将接收点的第一协调转移到其接收点的第二协调接近复平面的原点的第二协调; 和（c）基于接收点的第二协调来识别具有相对较小的累积路径值的发送点的具体数量。

公开(公告)号：US07339436B2

公开(公告)日：2008-03-04

申请号：US11439789

申请日：2006-05-24

申请人： Chang-Tsung Fu ,  Chien-Nan Kuo

发明人： Chang-Tsung Fu ,  Chien-Nan Kuo

IPC分类号： H03F1/34

CPC分类号： H03F1/342

摘要： This invention relates to a low noise amplifier, used in radio frequency integrated circuit design, especially low noise amplifiers for ultra broad-band wireless communication, comprising at least a transistor of the core circuit of a low noise amplifier structure, a transformer that is implemented on the chip, in order to form a dual feedback amplifier, that is, an amplifier structure comprising an inductive feedback and a capacitive feedback, wherein the capacitive feedback is used for the low and medium frequency range, while the inductive feedback is used for the high frequency range. By assembling an amplifier circuit with these two feedback paths, it is possible to provide a broadband and good impedance matching at the signal input end of the circuit. The low noise amplifier circuit structure of the present invention is able to provide optimal conditions for broadband input impedance matching and broadband noise optimum; besides significantly increasing the gain and gain flatness, there are also huge improvements to the noise performance and the cost-down on fabrication, and the energy consumption can also be maintained at a very low level.

摘要翻译： 本发明涉及用于射频集成电路设计的低噪声放大器，特别是用于超宽带无线通信的低噪声放大器，其至少包括低噪声放大器结构的核心电路的晶体管，实现的变压器 在芯片上，为了形成双反馈放大器，即包括电感反馈和电容反馈的放大器结构，其中电容反馈用于低和中频范围，而感应反馈用于 高频范围 通过组装具有这两个反馈路径的放大器电路，可以在电路的信号输入端提供宽带和良好的阻抗匹配。 本发明的低噪声放大器电路结构能够为宽带输入阻抗匹配和宽带噪声最优提供最佳条件; 除了显着增加增益和增益平坦度之外，噪声性能和制造成本也有巨大的改进，并且能量消耗也可以保持在非常低的水平。

公开(公告)号：US20070176686A1

公开(公告)日：2007-08-02

申请号：US11439789

申请日：2006-05-24

申请人： Chang-Tsung Fu ,  Chien-Nan Kuo

发明人： Chang-Tsung Fu ,  Chien-Nan Kuo

IPC分类号： H03F1/34

CPC分类号： H03F1/342

摘要： This invention relates to a low noise amplifier, used in radio frequency integrated circuit design, especially low noise amplifiers for ultra broad-band wireless communication, comprising at least a transistor of the core circuit of a low noise amplifier structure, a transformer that is implemented on the chip, in order to form a dual feedback amplifier, that is, an amplifier structure comprising an inductive feedback and a capacitive feedback, wherein the capacitive feedback is used for the low and medium frequency range, while the inductive feedback is used for the high frequency range. By assembling an amplifier circuit with these two feedback paths, it is possible to provide a broadband and good impedance matching at the signal input end of the circuit. The low noise amplifier circuit structure of the present invention is able to provide optimal conditions for broadband input impedance matching and broadband noise optimum; besides significantly increasing the gain and gain flatness, there are also huge improvements to the noise performance and the cost-down on fabrication, and the energy consumption can also be maintained at a very low level.

摘要翻译： 本发明涉及用于射频集成电路设计的低噪声放大器，特别是用于超宽带无线通信的低噪声放大器，其至少包括低噪声放大器结构的核心电路的晶体管，实现的变压器 在芯片上，为了形成双反馈放大器，即包括电感反馈和电容反馈的放大器结构，其中电容反馈用于低和中频范围，而感应反馈用于 高频范围 通过组装具有这两个反馈路径的放大器电路，可以在电路的信号输入端提供宽带和良好的阻抗匹配。 本发明的低噪声放大器电路结构能够为宽带输入阻抗匹配和宽带噪声最佳化提供最佳条件; 除了显着增加增益和增益平坦度之外，噪声性能和制造成本也有巨大的改进，并且能量消耗也可以保持在非常低的水平。