公开(公告)号：US20110076832A1

公开(公告)日：2011-03-31

申请号：US12570926

申请日：2009-09-30

申请人： Ming-Jie HUANG ,  Chen-Ping CHEN ,  Tung-Ying LEE

发明人： Ming-Jie HUANG ,  Chen-Ping CHEN ,  Tung-Ying LEE

IPC分类号： H01L21/762 ,  H01L21/302

CPC分类号： H01L21/76232 ,  H01L21/3081

摘要： A method of forming a hardmask for defining shallow trench isolation regions in a semiconductor substrate layer includes the steps of: depositing a hardmask layer over the semiconductor substrate layer; depositing and patterning a first photoresist layer over the hardmask layer; etching the hardmask layer after patterning the first photoresist layer to form an interim hardmask layer having at least one line feature; depositing and patterning a second photoresist layer over the interim hardmask layer; and forming a hardmask, the forming step including etching the interim hardmask layer after patterning the second photoresist layer to define a line end of the at least one line feature.

摘要翻译： 在半导体衬底层中形成用于限定浅沟槽隔离区的硬掩模的方法包括以下步骤：在半导体衬底层上沉积硬掩模层; 在硬掩模层上沉积和图案化第一光致抗蚀剂层; 在图案化第一光致抗蚀剂层之后蚀刻硬掩模层以形成具有至少一个线特征的临时硬掩模层; 在所述临时硬掩模层上沉积和图案化第二光致抗蚀剂层; 以及形成硬掩模，所述形成步骤包括在图案化所述第二光致抗蚀剂层之后蚀刻所述临时硬掩模层以限定所述至少一个线特征的线端。

公开(公告)号：US20120021607A1

公开(公告)日：2012-01-26

申请号：US12842162

申请日：2010-07-23

申请人： Ming-Jie HUANG ,  Chen-Ping CHEN

发明人： Ming-Jie HUANG ,  Chen-Ping CHEN

IPC分类号： H01L21/311 ,  H01L21/31

CPC分类号： H01L21/32139 ,  H01L21/0338 ,  H01L21/3088 ,  H01L21/31144

摘要： An embodiment of the disclosure includes a method of pitch reduction. A substrate is provided. A first material layer is formed over the substrate. A second material layer is formed on the first material layer. A hardmask layer is formed on the second material layer. A first imaging layer is formed on the hardmask layer. The first imaging layer is patterned to form a plurality of first features over the hardmask layer. The hardmask layer is etched utilizing the first imaging layer as a mask to form the first features in the hardmask layer. The first imaging layer is removed to expose the etched hardmask layer and a portion of a top surface of the second material layer. A second imaging layer is formed and the process is repeated, such that first and second features are alternating with a pitch substantially half the original pitch.

摘要翻译： 本公开的一个实施例包括减小音调的方法。 提供基板。 第一材料层形成在衬底上。 在第一材料层上形成第二材料层。 硬掩模层形成在第二材料层上。 第一成像层形成在硬掩模层上。 图案化第一成像层以在硬掩模层上形成多个第一特征。 使用第一成像层作为掩模蚀刻硬掩模层以形成硬掩模层中的第一特征。 去除第一成像层以暴露蚀刻的硬掩模层和第二材料层的顶表面的一部分。 形成第二成像层并且重复该过程，使得第一和第二特征以基本上相当于原始间距的一半的间距交替。