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公开(公告)号:US20100166033A1
公开(公告)日:2010-07-01
申请号:US12347392
申请日:2008-12-31
申请人: Ming-Ta CHIN , Kuo-Feng HUANG , Ping-Fei SHEN , Ching-Jen WANG , Shih-Pang CHANG
发明人: Ming-Ta CHIN , Kuo-Feng HUANG , Ping-Fei SHEN , Ching-Jen WANG , Shih-Pang CHANG
IPC分类号: H01S5/00
CPC分类号: H01S5/343 , B82Y20/00 , H01L33/06 , H01L33/30 , H01S5/0216 , H01S5/0217 , H01S5/309 , H01S5/3407
摘要: A semiconductor light-emitting device includes a substrate, a first cladding layer over the substrate, an active region on the first cladding layer, and a second cladding layer on the active region, wherein the active region includes a first type barrier layer that is doped and a second type barrier layer that is undoped, the first type barrier layer being closer to the first cladding layer than the second type barrier layer.
摘要翻译: 一种半导体发光器件,包括:衬底,衬底上的第一覆层,第一覆层上的有源区和有源区上的第二覆层,其中有源区包括掺杂的第一类阻挡层 以及不掺杂的第二类型阻挡层,所述第一类型阻挡层比所述第二类型阻挡层更靠近所述第一包覆层。