公开(公告)号：US20190214788A1

公开(公告)日：2019-07-11

申请号：US16243779

申请日：2019-01-09

申请人： LG INNOTEK CO., LTD.

发明人： HO JAE KANG ,  JUNG HUN JANG

IPC分类号： H01S5/183 ,  H01S5/187

CPC分类号： H01S5/18311 ,  H01S5/0216 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/3054 ,  H01S5/3077 ,  H01S5/309 ,  H01S5/3409 ,  H01S5/34333

摘要： Surface-emitting laser devices and light-emitting devices including the same are provided. A surface-emitting laser device can include: a first reflective layer and a second reflective layer; and an active region disposed between the first reflective layer and the second reflective layer, wherein the first reflective layer includes a first group first reflective layer and a second group first reflective layer, and the second reflective layer includes a first group second reflective layer and a second group second reflective layer.

公开(公告)号：US10038302B2

公开(公告)日：2018-07-31

申请号：US15450400

申请日：2017-03-06

申请人： THE UNIVERSITY OF CONNECTICUT ,  Opel Solar, Inc.

发明人： Geoff W. Taylor

IPC分类号： H01S5/10 ,  G02B6/293 ,  G02B6/134 ,  G02B6/13 ,  H01S5/042 ,  H01S5/062 ,  H01S5/20 ,  H01S5/30 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/112 ,  H01L31/11 ,  H01L31/0232 ,  H01L31/18 ,  H01S5/343

CPC分类号： H01S5/1071 ,  G02B6/131 ,  G02B6/1347 ,  G02B6/29338 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/085 ,  H01L27/1443 ,  H01L29/083 ,  H01L29/1066 ,  H01L29/15 ,  H01L29/36 ,  H01L29/66401 ,  H01L29/74 ,  H01L29/7783 ,  H01L31/02327 ,  H01L31/03046 ,  H01L31/035209 ,  H01L31/035236 ,  H01L31/1105 ,  H01L31/1113 ,  H01L31/1129 ,  H01L31/1844 ,  H01L33/06 ,  H01L33/105 ,  H01S5/0228 ,  H01S5/0421 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/06203 ,  H01S5/06226 ,  H01S5/0625 ,  H01S5/1028 ,  H01S5/1032 ,  H01S5/1042 ,  H01S5/1075 ,  H01S5/125 ,  H01S5/183 ,  H01S5/187 ,  H01S5/2027 ,  H01S5/2063 ,  H01S5/2086 ,  H01S5/222 ,  H01S5/3054 ,  H01S5/309 ,  H01S5/34313

摘要： A semiconductor device includes an n-type ohmic contact layer, cathode and anode electrodes, p-type and n-type modulation doped quantum well (QW) structures, and first and second ion implant regions. The anode electrode is formed on the first ion implant region that contacts the p-type modulation doped QW structure and the cathode electrode is formed by patterning the first and second ion implant regions and the n-type ohmic contact layer. The semiconductor device is configured to operate as at least one of a diode laser and a diode detector. As the diode laser, the semiconductor device emits photons. As the diode detector, the semiconductor device receives an input optical light and generates a photocurrent.

公开(公告)号：US09960572B2

公开(公告)日：2018-05-01

申请号：US15235756

申请日：2016-08-12

申请人： FURUKAWA ELECTRIC CO., LTD.

发明人： Masayuki Iwami ,  Hirotatsu Ishii ,  Norihiro Iwai ,  Takeyoshi Matsuda ,  Akihiko Kasukawa ,  Takuya Ishikawa ,  Yasumasa Kawakita ,  Eisaku Kaji

IPC分类号： H01S5/343 ,  H01L29/778 ,  H01L29/201 ,  H01L29/868 ,  H01S5/227 ,  H01S5/30 ,  H01L29/04 ,  H01L29/205 ,  H01L31/0304 ,  H01L31/036 ,  H01L31/105 ,  H01L29/36 ,  H01S5/32 ,  H01S5/22 ,  H01L21/02

CPC分类号： H01S5/34313 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/201 ,  H01L29/205 ,  H01L29/36 ,  H01L29/7784 ,  H01L29/7787 ,  H01L29/868 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/105 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/32 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/3434 ,  H01S5/34373

摘要： A semiconductor device includes a semiconductor layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in the semiconductor layer.

公开(公告)号：US09625647B2

公开(公告)日：2017-04-18

申请号：US14222841

申请日：2014-03-24

申请人： Opel Solar, Inc. ,  The University of Connecticut

发明人： Geoff W. Taylor

IPC分类号： H01L29/10 ,  G02B6/134 ,  H01L27/144 ,  H01L31/0352 ,  H01S5/042 ,  H01L29/66 ,  H01L29/74 ,  H01L21/8252 ,  H01L29/778 ,  H01L27/06 ,  H01L27/085 ,  H01L31/111 ,  H01L33/10 ,  H01S5/0625 ,  H01S5/343 ,  H01S5/062 ,  H01S5/10 ,  H01S5/20 ,  H01S5/30 ,  H01S5/22

CPC分类号： H01S5/1071 ,  G02B6/131 ,  G02B6/1347 ,  G02B6/29338 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/085 ,  H01L27/1443 ,  H01L29/083 ,  H01L29/1066 ,  H01L29/15 ,  H01L29/36 ,  H01L29/66401 ,  H01L29/74 ,  H01L29/7783 ,  H01L31/02327 ,  H01L31/03046 ,  H01L31/035209 ,  H01L31/035236 ,  H01L31/1105 ,  H01L31/1113 ,  H01L31/1129 ,  H01L31/1844 ,  H01L33/06 ,  H01L33/105 ,  H01S5/0228 ,  H01S5/0421 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/06203 ,  H01S5/06226 ,  H01S5/0625 ,  H01S5/1028 ,  H01S5/1032 ,  H01S5/1042 ,  H01S5/1075 ,  H01S5/125 ,  H01S5/183 ,  H01S5/187 ,  H01S5/2027 ,  H01S5/2063 ,  H01S5/2086 ,  H01S5/222 ,  H01S5/3054 ,  H01S5/309 ,  H01S5/34313

摘要： A semiconductor device employs an epitaxial layer arrangement including a first ohmic contact layer and first modulation doped quantum well structure disposed above the first ohmic contact layer. The first ohmic contact layer has a first doping type, and the first modulation doped quantum well structure has a modulation doped layer of a second doping type. At least one isolation ion implant region is provided that extends through the first ohmic contact layer. The at least one isolation ion implant region can include oxygen ions. The at least one isolation ion implant region can define a region that is substantially free of charge carriers in order to reduce a characteristic capacitance of the device. A variety of high performance transistor devices (e.g., HFET and BICFETs) and optoelectronic devices can employ this device structure. Other aspects of wavelength-tunable microresonantors and related semiconductor fabrication methodologies are also described and claimed.

公开(公告)号：US20160352075A1

公开(公告)日：2016-12-01

申请号：US15235685

申请日：2016-08-12

申请人： FURUKAWA ELECTRIC CO., LTD.

发明人： Masayuki IWAMI ,  Hirotatsu ISHII ,  Norihiro IWAI ,  Takeyoshi MATSUDA ,  Akihiko KASUKAWA ,  Takuya ISHIKAWA ,  Yasumasa KAWAKITA ,  Eisaku KAJI

IPC分类号： H01S5/343 ,  H01S5/227 ,  H01S5/30

CPC分类号： H01S5/34313 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/201 ,  H01L29/205 ,  H01L29/36 ,  H01L29/7784 ,  H01L29/7787 ,  H01L29/868 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/105 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/32 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/3434 ,  H01S5/34373

摘要： A semiconductor laser device includes an active layer including a well layer and a barrier layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer, and a III group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer contains Al.

摘要翻译： 半导体激光装置包括具有阱层和由含有As作为V族的主要成分的III-V族半导体晶体形成的势垒层的有源层。 在As阱中的至少一个阱层和阻挡层中的以III-V族半导体晶体的V基部位以0.02〜5％的浓度引入As以外的AV族元素， 阱层和阻挡层中的至少一个中的III-V族半导体晶体含有Al。

公开(公告)号：US08902945B1

公开(公告)日：2014-12-02

申请号：US13567307

申请日：2012-08-06

申请人： Xiaoguang He ,  Martin Kwakernaak

发明人： Xiaoguang He ,  Martin Kwakernaak

IPC分类号： H01S5/00

CPC分类号： H01S5/101 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/141 ,  H01S5/227 ,  H01S5/309

摘要： A semiconductor gain device comprising a substrate; an optical waveguide layer extending from a first end of the substrate to a second end of the substrate opposite to the first end, the optical waveguide layer including an active layer formed on the upper surface; a reflective mirror provided at one end of the optical waveguide layer, and an exit aperture on the other end of the optical waveguide layer for emitting optical energy; wherein at least a portion of the optical waveguide layer is curved on the surface of the substrate from the first end to the second end with a radius of curvature of less than 4 mm.

摘要翻译： 一种半导体增益器件，包括衬底; 光波导层，其从所述基板的第一端延伸到与所述第一端相反的所述基板的第二端，所述光波导层包括形成在所述上表面上的有源层; 设置在光波导层的一端的反射镜，以及用于发射光能的光波导层另一端的出射孔; 其中所述光波导层的至少一部分在所述基板的表面上从所述第一端弯曲到具有小于4mm的曲率半径的所述第二端。

公开(公告)号：US20120049159A1

公开(公告)日：2012-03-01

申请号：US13291176

申请日：2011-11-08

申请人： Akira Tanaka

发明人： Akira Tanaka

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/025 ,  H01L33/32 ,  H01S5/309 ,  H01S5/34333

摘要： A light emitting device includes: a first layer made of a semiconductor of a first conductivity type; a second layer made of a semiconductor of a second conductivity type; an active layer including a multiple quantum well provided between the first layer and the second layer, impurity concentration of the first conductivity type in each barrier layer of the multiple quantum well having a generally flat distribution or increasing toward the second layer, average of the impurity concentration in the barrier layer on the second layer side as viewed from each well layer of the multiple quantum well being equal to or greater than average of the impurity concentration in the barrier layer on the first layer side, and average of the impurity concentration in the barrier layer nearest to the second layer being higher than average of the impurity concentration in the barrier layer nearest to the first layer.

摘要翻译： 发光器件包括：由第一导电类型的半导体制成的第一层; 由第二导电类型的半导体制成的第二层; 包括设置在第一层和第二层之间的多量子阱的有源层，多量子阱的每个势垒层中的第一导电类型的杂质浓度具有大致平坦的分布或朝着第二层增加，杂质的平均值 从多量子阱的各阱层观察的第二层侧的阻挡层的浓度等于或大于第一层侧的阻挡层中的杂质浓度的平均值，以及 最靠近第二层的阻挡层高于最靠近第一层的势垒层中的杂质浓度的平均值。

公开(公告)号：US07953134B2

公开(公告)日：2011-05-31

申请号：US12347392

申请日：2008-12-31

申请人： Ming-Ta Chin ,  Kuo-Feng Huang ,  Ping-Fei Shen ,  Ching-Jen Wang ,  Shih-Pang Chang

发明人： Ming-Ta Chin ,  Kuo-Feng Huang ,  Ping-Fei Shen ,  Ching-Jen Wang ,  Shih-Pang Chang

IPC分类号： H01S5/00

CPC分类号： H01S5/343 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/30 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/309 ,  H01S5/3407

摘要： A semiconductor light-emitting device includes a substrate, a first cladding layer over the substrate, an active region on the first cladding layer, and a second cladding layer on the active region, wherein the active region includes a first type barrier layer that is doped and a second type barrier layer that is undoped, the first type barrier layer being closer to the first cladding layer than the second type barrier layer.

摘要翻译： 一种半导体发光器件，包括：衬底，衬底上的第一覆层，第一覆层上的有源区和有源区上的第二覆层，其中有源区包括掺杂的第一类阻挡层 以及不掺杂的第二类型阻挡层，所述第一类型阻挡层比所述第二类型阻挡层更靠近所述第一包覆层。

公开(公告)号：US07667226B2

公开(公告)日：2010-02-23

申请号：US12035324

申请日：2008-02-21

申请人： Tomoya Yanamoto

发明人： Tomoya Yanamoto

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/309 ,  H01S5/3216 ,  H01S5/3407 ,  H01S5/3409 ,  H01S5/34333

摘要： A semiconductor device comprises an active layer having a quantum well structure, the active layer including a well layer and a barrier layer and being sandwiched by a first conductivity type layer and a second conductivity type layer, wherein a first barrier layer is provided on side of the first conductivity type layer in the active layer and a second barrier layer is provided on the side of the second conductivity type layer in the active layer, at least one well layer is sandwiched thereby, and the second barrier layer has a band gap energy lower than that of the first barrier layer in the form of asymmetric barrier layer structure, where the second conductivity type layer preferably includes a carrier confinement layer having a band gap energy higher than that of the first barrier layer, resulting in a reverse structure in each of conductivity type layer in respect to the asymmetric structure of the active layer to provide a waveguide structure having excellent crystallinity and device characteristics in the nitride semiconductor light emitting device operating at a wavelength of 380 nm or shorter.

摘要翻译： 半导体器件包括具有量子阱结构的有源层，所述有源层包括阱层和阻挡层，并被第一导电型层和第二导电型层夹在中间，其中第一势垒层设置在 有源层中的第一导电类型层和第二阻挡层设置在有源层中的第二导电类型层的一侧上，至少一个阱层被夹在其中，并且第二势垒层具有较低的带隙能量 其中第二导电类型层优选地包括具有比第一阻挡层的带隙能量高的带隙能量的载流子限制层，从而导致每个中的阻挡层的反向结构 相对于有源层的不对称结构的导电类型层，以提供具有优异结晶度的波导结构和d 氮化物半导体发光器件在380nm或更短波长下工作的器件特性。

公开(公告)号：US20050127391A1

公开(公告)日：2005-06-16

申请号：US10250453

申请日：2002-11-05

申请人： Tomoya Yanamoto

发明人： Tomoya Yanamoto

IPC分类号： H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01L33/42 ,  H01S5/20 ,  H01S5/30 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01L33/00

CPC分类号： B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/309 ,  H01S5/3216 ,  H01S5/3407 ,  H01S5/3409 ,  H01S5/34333

摘要： A semiconductor device comprises an active layer having a quantum well structure, the active layer including a well layer and a barrier layer and being sandwiched by a first conductivity type layer and a second conductivity type layer, wherein a first barrier layer is provided on side of the first conductivity type layer in the active layer and a second barrier layer is provided on the side of the second conductivity type layer in the active layer, at least one well layer is sandwiched thereby, and the second barrier layer has a band gap energy lower than that of the first barrier layer in the form of asymmetric barrier layer structure, where the second conductivity type layer preferably includes a carrier confinement layer having a band gap energy higher than that of the first barrier layer, resulting in a reverse structure in each of conductivity type layer in respect to the asymmetric structure of the active layer to provide a waveguide structure having excellent crystallinity and device characteristics in the nitride semiconductor light emitting device operating at a wavelength of 380 nm or shorter.

摘要翻译： 半导体器件包括具有量子阱结构的有源层，所述有源层包括阱层和阻挡层，并被第一导电型层和第二导电型层夹在中间，其中第一势垒层设置在 有源层中的第一导电类型层和第二阻挡层设置在有源层中的第二导电类型层的一侧上，至少一个阱层被夹在其中，并且第二势垒层具有较低的带隙能量 其中第二导电类型层优选地包括具有比第一阻挡层的带隙能量高的带隙能量的载流子限制层，从而导致每个中的阻挡层的反向结构 相对于有源层的不对称结构的导电类型层，以提供具有优异结晶度的波导结构和d 氮化物半导体发光器件在380nm或更短波长下工作的器件特性。