公开(公告)号：US20170287819A1

公开(公告)日：2017-10-05

申请号：US15218541

申请日：2016-07-25

申请人： Mitsubishi Electric Corporation

发明人： Tatsuya FUKASE ,  Masaki KATO ,  Masahiko FUJITA ,  Manabu HORITA

IPC分类号： H01L23/495 ,  H01L23/498

CPC分类号： H01L23/49568 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/4951 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L23/49805 ,  H01L2224/00 ,  H01L2224/40245 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00012

摘要： When a power semiconductor device is energized, heat generated from upper-side power semiconductor chips mounted on a P-potential electrode transfers to a first heat mass portion and a second heat mass portion, and heat generated from lower-side power semiconductor chips mounted on a intermediate potential electrode transfers to a resistor. A lead frame, the power semiconductor chip, an inner lead and the resistor are placed in symmetry with respect to a centerline, which can reduce the difference among the temperature increases of the power semiconductor chips when energized. In this way, transient temperature increase of the power semiconductor chip can be suppressed without adding a new member, such as a heat diffusion plate.