公开(公告)号：US5210601A

公开(公告)日：1993-05-11

申请号：US817952

申请日：1992-01-06

申请人： Mitsuhiko Kitagawa ,  Yoshio Yokota ,  Kazuo Watanuki, deceased

发明人： Mitsuhiko Kitagawa ,  Yoshio Yokota ,  Kazuo Watanuki, deceased

IPC分类号： H01L23/48

CPC分类号： H01L24/72 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055

摘要： According to this invention, a compression contacted semiconductor device is characterized by including a semiconductor pellet having main electrodes formed a first major surface of one surface side and a second major surface of another surface side, and electrode posts arranged on at least one major surface of the semiconductor pellet through an electrode member to sandwich the semiconductor pellet to compress the electrodes of the first and second major surfaces, wherein a crystal defect density is distributed within a surface of the semiconductor pellet so that a carrier lifetime of at least heat generating portions in the surface of the semiconductor pellet which do not sufficiently conduct heat to the electrode posts is shorter than a carrier lifetime of major heat generating portions which sufficiently conduct heat to the electrode posts. For this reason, current in the heat generating portions which do not sufficiently conduct heat to the electrode members is decreased. Therefore, the amount of heat generation is reduced, and the break-down voltage of a semiconductor element is increased.

摘要翻译： 根据本发明，压电接触半导体器件的特征在于包括：半导体芯片，其具有形成有一个表面侧的第一主表面和另一个表面侧的第二主表面的主电极，以及设置在至少一个主表面上的电极柱 所述半导体颗粒通过电极构件夹持半导体颗粒以压缩第一和第二主表面的电极，其中晶体缺陷密度分布在半导体芯片的表面内，使得至少发热部分的载流子寿命 不足够地向电极柱传导热量的半导体芯片的表面比向电极柱充分传导热量的主要发热部分的载流子寿命短。 因此，不能充分地向电极部件传导热量的发热部的电流降低。 因此，发热量减少，半导体元件的击穿电压升高。