公开(公告)号：US20070131652A1

公开(公告)日：2007-06-14

申请号：US10581256

申请日：2004-11-26

申请人： Mitsuhiro Okune ,  Mitsuru Hiroshima ,  Hiroyuki Suzuki ,  Sumio Miyake ,  Shouzou Watanabe

发明人： Mitsuhiro Okune ,  Mitsuru Hiroshima ,  Hiroyuki Suzuki ,  Sumio Miyake ,  Shouzou Watanabe

IPC分类号： C23F1/00 ,  B44C1/22 ,  H01L21/302

CPC分类号： H01J37/321 ,  H01J2237/3347 ,  H01L21/3065

摘要： An object of the present invention is to provide a plasma etching method by which both of a requirement for a trench shape and a requirement for a aspect ratio can be satisfied, and a trench having a side wall of a smooth shape can be formed. According to the present invention, a silicon substrate is placed on a lower electrode (120), etching gas is supplied through a gas introducing port (140) and exhausted from an exhaust port (150), high frequency powers (130a, 130b) supply high-frequency electricity to an upper electrode (110) and a lower electrode (120), respectively, in order to energize the etching gas into plasma state, using an ICP method, and then activated species are generated to make etching of the silicon substrate be progressed. As the etching gas, mixed gas, which includes mainly SF6 gas added with O2 gas and He gas, is used.

摘要翻译： 本发明的目的是提供一种等离子体蚀刻方法，其中可以满足沟槽形状的要求和宽高比的要求，并且可以形成具有平滑形状的侧壁的沟槽。 根据本发明，将硅衬底放置在下电极（120）上，通过气体导入口（140）供给蚀刻气体并从排气口（150）排出高频电力（130a，130b ）分别向上部电极（110）和下部电极（120）供给高频电力，以使用ICP方法将蚀刻气体激发成等离子体状态，然后产生活化物质，以使 硅衬底进行。 作为蚀刻气体，使用主要包含添加有O 2气体的SF 6气体和He气体的混合气体。