Semiconductor device with pure copper wirings and method of
manufacturing a semiconductor device with pure copper wirings
    1.
    发明授权
    Semiconductor device with pure copper wirings and method of manufacturing a semiconductor device with pure copper wirings 失效
    具有纯铜布线的半导体器件以及制造具有纯铜布线的半导体器件的方法

    公开(公告)号:US5990008A

    公开(公告)日:1999-11-23

    申请号:US934751

    申请日:1997-09-22

    IPC分类号: H01L21/768 H01L21/44

    摘要: In a method for forming a high aspect ratio structure using copper in an ultra high-speed device, the degree of copper burying is heightened. A high aspect ratio structure, such as a fine connecting hole, is formed in a layer insulating film on a silicon substrate. Then, after a CVD-TiN film is formed to have a thickness of 10 nm on the insulating film, a copper film having a thickness of 1 .mu.m is formed. In this case, the highly pure copper film is formed by controlling film-forming conditions so as to set oxygen and sulfur concentrations in the film equal to a fixed level or lower. Thus, during its burying in the connecting hole, the surface diffusibility and fluidity of the copper film heated by means of laser irradiation are facilitated.

    摘要翻译: 在超高速装置中使用铜形成高纵横比结构的方法中,铜埋入的程度提高。 在硅衬底上的层绝缘膜中形成诸如细连接孔的高纵横比结构。 然后,在绝缘膜上形成厚度为10nm的CVD-TiN膜之后,形成厚度为1μm的铜膜。 在这种情况下,通过控制成膜条件以使膜中的氧和硫浓度等于或等于固定水平而形成高纯度铜膜。 因此,在连接孔埋入时,通过激光照射加热的铜膜的表面扩散性和流动性变得容易。

    Semiconductor device with pure copper wirings and method of manufacturing a semiconductor device with pure copper wirings
    2.
    发明授权
    Semiconductor device with pure copper wirings and method of manufacturing a semiconductor device with pure copper wirings 失效
    具有纯铜布线的半导体器件以及制造具有纯铜布线的半导体器件的方法

    公开(公告)号:US06424045B2

    公开(公告)日:2002-07-23

    申请号:US09409436

    申请日:1999-09-30

    IPC分类号: H01L2348

    摘要: In a method for forming a high aspect ratio structure using copper in an ultra high-speed device, the degree of copper burying is heightened. A high aspect ratio structure, such as a fine connecting hole, is formed in a layer insulating film on a silicon substrate. Then, after a CVD-TiN film is formed to have a thickness of 10 nm on the insulating film, a copper film having a thickness of 1 &mgr;g m is formed. In this case, the highly pure copper film is formed by controlling film-forming conditions so as to set oxygen and sulfur concentrations in the film equal to a fixed level or lower. Thus, during its burying in the connecting hole, the surface diffusibility and fluidity of the copper film heated by means of laser irradiation are facilitated.

    摘要翻译: 在超高速装置中使用铜形成高纵横比结构的方法中,铜埋入的程度提高。 在硅衬底上的层绝缘膜中形成诸如细连接孔的高纵横比结构。 然后,在绝缘膜上形成厚度为10nm的CVD-TiN膜之后,形成厚度为1μm的铜膜。 在这种情况下,通过控制成膜条件以使膜中的氧和硫浓度等于或等于固定水平而形成高纯度铜膜。 因此,在连接孔埋入时,通过激光照射加热的铜膜的表面扩散性和流动性变得容易。

    Method of making a semiconductor device having a multilayer metal film of titanium/titanium nitride/tungsten/tungsten carbide
    3.
    发明授权
    Method of making a semiconductor device having a multilayer metal film of titanium/titanium nitride/tungsten/tungsten carbide 失效
    制造具有钛/氮化钛/钨/碳化钨的多层金属膜的半导体器件的方法

    公开(公告)号:US06812136B2

    公开(公告)日:2004-11-02

    申请号:US09799674

    申请日:2001-03-07

    IPC分类号: H01L214763

    摘要: According to the present invention, when a wiring layer using copper is formed, an interlayer insulation film is formed on a semiconductor substrate having a conductive portion of an element. A contact hole, which is connected to at least the conductive portion, is formed in the interlayer insulation film. A wiring groove is formed in the surface of the interlayer insulation film including a region where the contact hole is formed. A barrier metal having a tungsten carbide film on its surface is formed on the surface of the interlayer insulation film and in the wiring groove and contact hole in contact with the conductive portion. A copper film is then formed on the barrier metal in contact with the tungsten carbide film. After that, the contact hole and wiring groove are completely filled with the copper film by heat treatment. An excess portion is removed from the copper film except in the contact hole and wiring groove thereby to form a copper buried wiring layer. Thus, the copper film is formed in contact with the tungsten carbide film and the wettability of copper to the barrier metal is improved, accordingly, the copper wiring layer can be increased in reliability.

    Image forming apparatus, stirring unit and process cartridge
    5.
    发明授权
    Image forming apparatus, stirring unit and process cartridge 有权
    图像形成装置,搅拌装置和处理盒

    公开(公告)号:US08934794B2

    公开(公告)日:2015-01-13

    申请号:US13433611

    申请日:2012-03-29

    申请人: Takeshi Kubota

    发明人: Takeshi Kubota

    IPC分类号: G03G15/00 G03G15/08 G03G21/20

    摘要: A developer stirring unit is rotated and driven without driving an electrophotographic photosensitive drum according to output information of a temperature detection unit of an image forming apparatus during a non-image formation period, thereby cooling a developer near a developing roller.

    摘要翻译: 根据图像形成装置的温度检测单元的输出信息,在非图像形成期间,显影剂搅拌单元被旋转驱动而不驱动电子照相感光鼓,从而冷却显影辊附近的显影剂。

    Magnetic resonance imaging apparatus and method
    6.
    发明授权
    Magnetic resonance imaging apparatus and method 有权
    磁共振成像装置及方法

    公开(公告)号:US08742758B2

    公开(公告)日:2014-06-03

    申请号:US12952903

    申请日:2010-11-23

    IPC分类号: G01V3/00 G01R33/44

    摘要: A magnetic resonance imaging apparatus includes a plurality of coil elements for receiving magnetic resonance signals of a subject in a plurality of selectable combinations. The magnetic resonance imaging apparatus also includes a sensitive region storage device for storing respective sensitive regions for the combinations of the coil elements, a setting device for setting scan regions, a calculation device for calculating a scan volume rate indicating each of proportions of overlap regions between the scan regions and the sensitive regions to the scan regions, and a sensitivity volume rate indicating each of proportions of the overlap regions to the sensitive regions, and a selection device for selecting each combination of the coil elements used to receive the magnetic resonance signals of the subject, out of the combinations of the coil elements, based on the scan volume rate and the sensitivity volume rate.

    摘要翻译: 磁共振成像装置包括用于以多个可选组合接收被检体的磁共振信号的多个线圈元件。 磁共振成像装置还包括敏感区域存储装置,用于存储用于线圈元件的组合的各个敏感区域,用于设置扫描区域的设置装置,用于计算扫描体积率的计算装置,该计算装置指示每个扫描体积率之间的重叠区域的比例 扫描区域和扫描区域的敏感区域以及指示与敏感区域的重叠区域的比例的每一个的灵敏度体积率,以及用于选择用于接收磁共振信号的线圈元件的每个组合的选择装置 基于扫描体积率和灵敏度体积率,线圈元件的组合中的受试者。

    MULTIPLE VIEW LIQUID CRYSTAL DISPLAY
    7.
    发明申请
    MULTIPLE VIEW LIQUID CRYSTAL DISPLAY 有权
    多重查看液晶显示

    公开(公告)号:US20130070188A1

    公开(公告)日:2013-03-21

    申请号:US13549834

    申请日:2012-07-16

    IPC分类号: G02F1/1335

    CPC分类号: G02F1/133512 H04N13/31

    摘要: In a multiple view liquid crystal display, occurrence of a reverse view phenomenon and a reverse view crosstalk are suppressed. A black matrix is formed on the opposed surface of a counter substrate to a TFT substrate in a liquid crystal panel, and a parallax barrier is provided on the black matrix with a gap layer having a predetermined thickness interposed therebetween. The black matrix includes a first light blocking part disposed immediately below an opening in the parallax barrier, and a second light blocking part with a portion immediate thereabove covered by the parallax barrier. The second light blocking part includes a low refractive-index film (reverse view preventive film), having a lower refractive index than that of a liquid crystal, at the end thereof which is in contact with a pixel opening between the second light blocking part and the adjacent first light blocking part.

    摘要翻译: 在多视图液晶显示器中,抑制了反向视图现象和反向视图串扰的发生。 在液晶面板的TFT基板的对置面上形成有黑色矩阵,并且在黑矩阵上设有间隔层,并具有规定厚度的间隙层。 该黑色矩阵包括位于视差屏障中的开口正下方的第一遮光部分和具有由该视差屏障覆盖的其上的部分的第二遮光部分。 第二遮光部包括在与第二遮光部和第二遮光部之间的像素开口接触的端部具有比液晶低的折射率的低折射率膜(防反射膜) 相邻的第一遮光部分。

    NON-ORIENTED ELECTRICAL STEEL SHEET
    8.
    发明申请
    NON-ORIENTED ELECTRICAL STEEL SHEET 审中-公开
    非指向电工钢板

    公开(公告)号:US20120156086A1

    公开(公告)日:2012-06-21

    申请号:US13393881

    申请日:2010-08-25

    申请人: Takeshi Kubota

    发明人: Takeshi Kubota

    IPC分类号: C22C38/06 C22C38/02 C22C38/08

    摘要: A non-oriented electrical steel sheet contains 2.8 mass % or more and 4.0 mass % or less of Si, 0.2 mass % or more and 3.0 mass % or less of Al, and 0.02 mass % or more and 0.2 mass % or less of P. The non-oriented electrical steel sheet contains further contains 0.5 mass % or more in total of at least one kinds selected from a group consisting of 4.0 mass % or less of Ni and 2.0 mass % or less of Mn. A C content is 0.05 mass % or less, a N content is 0.01 mass % or less, an average grain diameter is 15 μm or less, and a axial density is 6 or larger.

    摘要翻译: 无取向电工钢板含有Si:2.8质量%以上且4.0质量%以下,Al为0.2质量%以上且3.0质量%以下,P:0.02质量%以上且0.2质量%以下 该无取向电工钢板的含量进一步含有选自由4.0质量%以下的Ni和2.0质量%以下的Mn组成的组中的至少一种的0.5质量%以上。 C含量为0.05质量%以下,N含量为0.01质量%以下,平均粒径为15μm以下,<111>轴向密度为6以上。

    NON-ORIENTED ELECTRICAL STEEL SHEET
    10.
    发明申请
    NON-ORIENTED ELECTRICAL STEEL SHEET 审中-公开
    非指向电工钢板

    公开(公告)号:US20110229362A1

    公开(公告)日:2011-09-22

    申请号:US13132270

    申请日:2010-01-19

    申请人: Takeshi Kubota

    发明人: Takeshi Kubota

    摘要: A non-oriented electrical steel sheet contains: C: not less than 0.003 mass % nor more than 0.05 mass %; N: not less than 0.001 mass % nor more than 0.01 mass %; and Si: not less than 2.8 mass % nor more than 3.5 mass %. The non-oriented electrical steel sheet further contains at least one kind selected from a group consisting of Ni: 4.0 mass % or less and Mn: 2.0 mass % or less, in a total amount of 0.5 mass % or more, and further contains Ti, a value RTi being not less than 1 nor more than 10, the value RTi being expressed by [Ti]/(4×([C]+[N])) when a Ti content is expressed as [Ti] mass %, a C content is expressed as [C] mass %, and an N content is expressed as [N] mass %. An Al content is 3.0 mass % or less, and a P content is 0.2 mass % or less.

    摘要翻译: 无取向电工钢板含有:C:0.003质量%以上0.05质量%以下。 N:0.001质量%以上0.01质量%以下; Si:2.8质量%以上3.5质量%以下。 无取向电工钢板还含有选自Ni:4.0质量%以下,Mn:2.0质量%以下的至少一种,总量为0.5质量%以上,进一步含有Ti ,当Ti含量表示为[Ti]质量%时,值RTi不小于1,不大于10,值RTi由[Ti] /(4×([C] + [N])表示) C含量表示为[C]质量%,N含量表示为[N]质量%。 Al含量为3.0质量%以下,P含量为0.2质量%以下。