公开(公告)号：US06331458B1

公开(公告)日：2001-12-18

申请号：US08532861

申请日：1995-09-22

申请人： Mohammed Anjum ,  Alan L. Stuber ,  Ibrahim K. Burki

发明人： Mohammed Anjum ,  Alan L. Stuber ,  Ibrahim K. Burki

IPC分类号： H01L21336

CPC分类号： H01L29/0847 ,  H01L21/823807

摘要： An MOS device is provided using indium as a threshold adjust implant in the channel regions of an NMOS device and/or in the conductive gate overlying the channel region in a PMOS device. Indium ions are relatively immobile and achieve location stability in the areas in which they are implanted. They do not readily segregate and diffuse in the lateral directions as well as in directions perpendicular to the silicon substrate. Placement immobility is necessary in order to minimize problems of threshold skew and gate oxide thickness enhancement. Additionally, it is believed that indium atoms within the channel region minimize hot carrier effects and the problems associated therewith.

摘要翻译： 使用铟作为在NMOS器件的沟道区域中和/或在PMOS器件中的沟道区域上的导电栅极中的阈值调整注入来提供MOS器件。 铟离子相对不动，并且在植入它们的区域中实现位置稳定性。 它们不容易在横向方向以及垂直于硅衬底的方向上分离和扩散。 放置不动是必要的，以最小化阈值偏移和栅极氧化物厚度增强的问题。 另外，相信沟道区域内的铟原子使热载流子效应和与之相关的问题最小化。

公开(公告)号：US06482719B1

公开(公告)日：2002-11-19

申请号：US08526149

申请日：1995-08-02

申请人： Mohammed Anjum ,  Alan L. Stuber ,  Maung H. Kyaw

发明人： Mohammed Anjum ,  Alan L. Stuber ,  Maung H. Kyaw

IPC分类号： H01L2130

CPC分类号： H01L21/76216 ,  H01L21/823481

摘要： An MOS device is provided having a channel-stop implant placed between active regions and beneath field oxides. The channel-stop dopant material is a p-type material of atomic weight greater than boron, and preferably utilizes solely indium ions. The indium ions, once implanted, have a greater tendency to remain in their position than boron ions. Subsequent temperature cycles caused by, for example, field oxide growth do not significantly change the initial implant position. Thus, NMOS devices utilizing indium channel-stop dopant can achieve higher pn junction breakdown voltages and lower parasitic source/drain-to-substrate capacitances. Furthermore, the heavier indium ions can be more accurately placed than lighter boron ions to a region just below the silicon layer which is to be consumed by subsequent field oxide growth. By fixing the peak concentration density of indium at a depth just below the field oxide lower surface, channel-stop implant region is very shallow. Small dispersions in range allow for more precise control of the indium atoms just below the field oxide, further from the inner bulk material of the underlying substrate.

摘要翻译： 提供了MOS器件，其具有放置在有源区域之间和场氧化物之下的通道停止植入物。 通道阻挡掺杂剂材料是原子量大于硼的p型材料，并且优选仅使用铟离子。 一旦注入，铟离子比硼离子具有更大的保留位置的倾向。 由例如场氧化物生长引起的后续温度循环不会显着改变初始植入位置。 因此，利用铟通道停止掺杂剂的NMOS器件可以实现更高的pn结击穿电压和较低的寄生源/漏极到衬底电容。 此外，较重的铟离子可以比较轻的硼离子更准确地放置在正好在随后的场氧化物生长消耗的硅层之下的区域。 通过在刚好低于场氧化物下表面的深度固定铟的峰浓度密度，通道停止注入区非常浅。 范围内的小分散体允许对场氧化物正下方的铟原子进行更精确的控制，远离底层基底的内部体积材料。