公开(公告)号：US5393676A

公开(公告)日：1995-02-28

申请号：US125421

申请日：1993-09-22

申请人： Mohammed Anjum ,  Ibrahim K. Burki ,  Craig W. Christian

发明人： Mohammed Anjum ,  Ibrahim K. Burki ,  Craig W. Christian

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L21/265

CPC分类号： H01L29/66575 ,  H01L21/28052 ,  H01L29/4916 ,  H01L29/4933 ,  H01L29/665

摘要： A PMOS device is provided having a diffusion barrier placed within a polysilicon gate material. The diffusion barrier is purposefully implanted to a deeper depth within the gate material than subsequently placed impurity dopants. The barrier comprises Ar atoms placed in fairly close proximity to one another within the gate conductor, and the impurity dopant comprises ions of BF.sub.2. F from the impurity dopant of BF.sub.2 is prevented from diffusing to underlying silicon-oxide bonds residing within the oxide bulk. By minimizing F migration to the bond sites, the present polysilicon barrier and method of manufacture can minimize oxygen dislodgment and recombination at the interface regions between the polysilicon and the gate oxide as well as between the gate oxide and silicon substrate.

摘要翻译： 提供PMOS器件，其具有放置在多晶硅栅极材料内的扩散势垒。 扩散阻挡层被有目的地植入到栅极材料内比之后放置的杂质掺杂物更深的深度。 势垒包括在栅极导体内彼此相当接近的Ar原子，杂质掺杂物包含BF 2的离子。 来自BF 2的杂质掺杂剂的F被阻止扩散到位于氧化物体内的下面的氧化硅键。 通过最小化F迁移到键合位置，本多晶硅势垒和制造方法可以使多晶硅和栅极氧化物之间以及栅极氧化物和硅衬底之间的界面区域处的氧分离和复合最小化。

公开(公告)号：US06331458B1

公开(公告)日：2001-12-18

申请号：US08532861

申请日：1995-09-22

申请人： Mohammed Anjum ,  Alan L. Stuber ,  Ibrahim K. Burki

发明人： Mohammed Anjum ,  Alan L. Stuber ,  Ibrahim K. Burki

IPC分类号： H01L21336

CPC分类号： H01L29/0847 ,  H01L21/823807

摘要： An MOS device is provided using indium as a threshold adjust implant in the channel regions of an NMOS device and/or in the conductive gate overlying the channel region in a PMOS device. Indium ions are relatively immobile and achieve location stability in the areas in which they are implanted. They do not readily segregate and diffuse in the lateral directions as well as in directions perpendicular to the silicon substrate. Placement immobility is necessary in order to minimize problems of threshold skew and gate oxide thickness enhancement. Additionally, it is believed that indium atoms within the channel region minimize hot carrier effects and the problems associated therewith.

摘要翻译： 使用铟作为在NMOS器件的沟道区域中和/或在PMOS器件中的沟道区域上的导电栅极中的阈值调整注入来提供MOS器件。 铟离子相对不动，并且在植入它们的区域中实现位置稳定性。 它们不容易在横向方向以及垂直于硅衬底的方向上分离和扩散。 放置不动是必要的，以最小化阈值偏移和栅极氧化物厚度增强的问题。 另外，相信沟道区域内的铟原子使热载流子效应和与之相关的问题最小化。

公开(公告)号：US5661335A

公开(公告)日：1997-08-26

申请号：US515285

申请日：1995-08-15

申请人： Mohammed Anjum ,  Ibrahim K. Burki ,  Craig W. Christian

发明人： Mohammed Anjum ,  Ibrahim K. Burki ,  Craig W. Christian

IPC分类号： H01L21/265 ,  H01L21/762 ,  H01L23/58 ,  H01L29/00

CPC分类号： H01L21/26506 ,  H01L21/76213 ,  H01L2924/0002 ,  Y10S438/981

摘要： A field oxide is provided which purposefully takes advantage of fluorine mobility from an implanted impurity species. The field oxide can be enhanced or thickened according to the size (area and thickness) of the oxide. Fluorine from the impurity species provides for dislodgement of oxygen at silicon-oxygen bond sites, leading to oxygen recombination at the field oxide/substrate interface. Thickening of the oxide through recombination occurs after it is initially grown and implanted. Accordingly, initial thermal oxidation can be shortened to enhance throughput. The fluorine-enhanced thickening effect can therefore compensate for the shorter thermal oxidation time. Moreover, the thickened oxide regions are anistropically oxidized underneath existing thermally grown oxides and directly underneath openings between nitrides. The thickened oxides therefore do not cause additional shrinkage of the active areas which reside between field oxides.

摘要翻译： 提供了一种场氧化物，其目的是利用植入的杂质物质的氟迁移率。 根据氧化物的尺寸（面积和厚度）可以增强或增厚氧化场。 来自杂质物质的氟提供氧 - 氧键位置处的氧的移出，导致在氧化物/底物界面处的氧复合。 在最初生长和植入之后，发生通过重组的氧化物的增稠。 因此，可以缩短初始热氧化以提高生产量。 因此，氟增强增稠效果可以补偿较短的热氧化时间。 此外，增厚的氧化物区域在现有的热生长氧化物的下面被钝化地氧化并且直接在氮化物之间的开口下方氧化。 因此，增稠的氧化物不会引起驻留在场氧化物之间的活性区域的额外收缩。

公开(公告)号：US5550084A

公开(公告)日：1996-08-27

申请号：US375126

申请日：1995-01-17

申请人： Mohammed Anjum ,  Ibrahim K. Burki ,  Craig W. Christian

发明人： Mohammed Anjum ,  Ibrahim K. Burki ,  Craig W. Christian

IPC分类号： H01L21/285 ,  H01L21/336 ,  H01L29/45 ,  H01L29/78 ,  H01L21/44 ,  H01L21/48

CPC分类号： H01L29/6659 ,  H01L21/28518 ,  H01L29/456 ,  H01L29/665 ,  H01L29/7833 ,  Y10S148/169

摘要： An improved method is provided for fabricating a metal silicide upon a semiconductor substrate. The method advantageously places a film of metal nitride upon the metal layer. The metal nitride layer and metal layer are sputter deposited within the same chamber without removing the substrate from the vacuum so as to prevent oxygen or moisture from contaminating the metal layer and causing oxides to form thereon. Furthermore, the metal nitride layer is reactively sputter deposited in a nitrogen/argon ambient to allow precise amounts of nitrogen to be deposited across uneven surface topography directly adjacent to the underlying metal layer. Excess nitrogen purposefully deposited within the metal nitride layer consumes a controlled depth of metal bond sites within the underlying metal layer so as to limit the amount of silicidation from underlying silicon or polysilicon into the metal thereby substantially eliminating or minimizing silicide shorting problems.

摘要翻译： 提供了一种用于在半导体衬底上制造金属硅化物的改进方法。 该方法有利地将金属氮化物膜放置在金属层上。 金属氮化物层和金属层溅射沉积在相同的室内，而不从真空中去除衬底，以防止氧气或水分污染金属层并引起氧化物在其上形成。 此外，金属氮化物层在氮气/氩气环境中被反应溅射沉积，以允许精确量的氮沉积在与下面的金属层直接相邻的不平坦表面形貌之间。 有目的地沉积在金属氮化物层内的过多的氮消耗了下层金属层内的金属结合位置的受控深度，从而限制从底层硅或多晶硅到金属中的硅化物的量，从而基本上消除或最小化硅化物短路问题。

公开(公告)号：US5372951A

公开(公告)日：1994-12-13

申请号：US131194

申请日：1993-10-01

申请人： Mohammed Anjum ,  Ibrahim K. Burki ,  Craig W. Christian

发明人： Mohammed Anjum ,  Ibrahim K. Burki ,  Craig W. Christian

IPC分类号： H01L21/265 ,  H01L21/762 ,  H01L21/266

CPC分类号： H01L21/26506 ,  H01L21/76213 ,  H01L2924/0002 ,  Y10S438/981

摘要： A field oxide is provided which purposefully takes advantage of fluorine mobility from an implanted impurity species. The field oxide can be enhanced or thickened according to the size (area and thickness) of the oxide. Fluorine from the impurity species provides for dislodgement of oxygen at silicon-oxygen bond sites, leading to oxygen recombination at the field oxide/substrate interface. Thickening of the oxide through recombination occurs after it is initially grown and implanted. Accordingly, initial thermal oxidation can be shortened to enhance throughput. The fluorine-enhanced thickening effect can therefore compensate for the shorter thermal oxidation time. Moreover, the thickened oxide regions are anistropically oxidized underneath existing thermally grown oxides and directly underneath openings between nitrides. The thickened oxides therefore do not cause additional shrinkage of the active areas which reside between field oxides.

摘要翻译： 提供了一种场氧化物，其目的是利用植入的杂质物质的氟迁移率。 根据氧化物的尺寸（面积和厚度）可以增强或增厚氧化场。 来自杂质物质的氟提供氧 - 氧键位置处的氧的移出，导致在氧化物/底物界面处的氧复合。 在最初生长和植入之后，发生通过重组的氧化物的增稠。 因此，可以缩短初始热氧化以提高生产量。 因此，氟增强增稠效果可以补偿较短的热氧化时间。 此外，增厚的氧化物区域在现有的热生长氧化物的下面被钝化地氧化并且直接在氮化物之间的开口下方氧化。 因此，增稠的氧化物不会引起驻留在场氧化物之间的活性区域的额外收缩。

公开(公告)号：US5444024A

公开(公告)日：1995-08-22

申请号：US258542

申请日：1994-06-10

申请人： Mohammed Anjum ,  Ibrahim K. Burki ,  Craig W. Christian

发明人： Mohammed Anjum ,  Ibrahim K. Burki ,  Craig W. Christian

IPC分类号： H01L21/285 ,  H01L21/265 ,  H01L21/28

CPC分类号： H01L21/28518 ,  Y10S148/019 ,  Y10S148/144

摘要： A method is provided for controlling growth of silicide to a defined thickness based upon the relative position of peak concentration density depth within a layer of titanium. The titanium layer is deposited over silicon and namely over the silicon junction regions. Thereafter the titanium is implanted with argon ions. The argon ions are implanted at a peak concentration density level corresponding to a depth relative to the upper surface of the titanium. The peak concentration density depth can vary depending upon the dosage and implant energies of the ion implanter. Preferably, the peak concentration density depth is at a midpoint between the upper and lower surfaces of the titanium or at an elevational level beneath the midpoint and above the lower surface of the titanium. Subsequent anneal of the argon-implanted titanium causes the argon atoms to occupy a diffusion area normally taken by silicon consumed and growing within overlying titanium. However, based upon the presence of argon, the diffusion length and therefore the silicide thickness is reduced to a controllable amount necessary for applications with ultra-shallow junction depths.

摘要翻译： 提供了一种基于钛层内的峰浓度密度深度的相对位置来控制硅化物的规定厚度的方法。 钛层沉积在硅上，即在硅结区上。 之后，用氩离子注入钛。 以与钛的上表面相对应的深度的峰值浓度密度水平注入氩离子。 峰浓度密度深度可以根据离子注入机的剂量和植入能量而变化。 优选地，峰浓度密度深度处于钛的上表面和下表面之间的中点处，或者在钛的下表面上方的中点以上。 氩注入钛的后续退火导致氩原子占据通常被硅消耗并在上覆钛内生长的扩散区域。 然而，基于氩的存在，扩散长度以及因此的硅化物厚度减小到具有超浅结深度的应用所需的可控量。

公开(公告)号：US5470794A

公开(公告)日：1995-11-28

申请号：US200628

申请日：1994-02-23

申请人： Mohammed Anjum ,  Ibrahim K. Burki ,  Craig W. Christian

发明人： Mohammed Anjum ,  Ibrahim K. Burki ,  Craig W. Christian

IPC分类号： H01L21/265 ,  H01L21/285 ,  H01L21/336 ,  H01L21/283

CPC分类号： H01L29/66575 ,  H01L21/26506 ,  H01L21/26526 ,  H01L21/28518 ,  Y10S148/019

摘要： An improved method is provided for fabricating a metal silicide upon a semiconductor substrate. The method utilizes ion beam mixing by implanting germanium to a specific elevation level within a metal layer overlying a silicon contact region. The implanted germanium atoms impact upon and move a plurality of metal atoms through the metal-silicon interface and into a region residing immediately below the silicon (or polysilicon) surface. The metal atoms can therefore bond with silicon atoms to cause a pre-mixing of metal with silicon near the interface in order to enhance silicidation. Germanium is advantageously chosen as the irradiating species to ensure proper placement of the germanium and ensuing movement of dislodged metal atoms necessary for minimizing oxides left in the contact windows and lattice damage within the underlying silicon (or polysilicon).

摘要翻译： 提供了一种用于在半导体衬底上制造金属硅化物的改进方法。 该方法通过将锗注入到覆盖硅接触区域的金属层内的特定高度水平上来利用离子束混合。 植入的锗原子冲击并移动多个金属原子通过金属 - 硅界面并移动到位于硅（或多晶硅）表面正下方的区域中。 因此，为了增强硅化物，金属原子可以与硅原子键合以在界面附近引起金属与硅的预混合。 有利地，锗被选择为照射种类，以确保锗的适当放置和随后的移动的金属原子的移动，以使残留在接触窗口中的氧化物和底层硅（或多晶硅）中的晶格损伤最小化。