公开(公告)号：US07183022B2

公开(公告)日：2007-02-27

申请号：US10439193

申请日：2003-05-15

申请人： Molela Moukara ,  Reinhard Pufall

发明人： Molela Moukara ,  Reinhard Pufall

IPC分类号： G03F1/00 ,  G03C5/00

CPC分类号： G03F1/36 ,  G03F1/26 ,  G03F1/70 ,  G03F7/2022

摘要： A method for producing a mask set for lithography including at least one mask, has a predetermined layout of structures which are provided for imaging into a common exposure plane and which are transferred to the masks as a basis. Strongly coupled structures that are so closely adjacent one another, at least in sections, that they are strongly coupled in the case of simultaneous imaging are distributed between at least two different masks of the mask set.

摘要翻译： 一种用于制造包括至少一个掩模的光刻掩模组的方法，具有预定的结构布局，其被设置用于成像到公共曝光平面中并作为基础转印到掩模。 至少在部分中彼此紧密相邻的强耦合结构在同时成像的情况下被强耦合分布在掩模组的至少两个不同掩模之间。

公开(公告)号：US20050148195A1

公开(公告)日：2005-07-07

申请号：US11029573

申请日：2005-01-05

申请人： Roderick Koehle ,  Reinhard Pufall

发明人： Roderick Koehle ,  Reinhard Pufall

IPC分类号： G03F1/00 ,  G03F1/36 ,  G06F11/30

CPC分类号： G03F1/36

摘要： In the method, which is to be carried out on a computer system, firstly design data of a semiconductor substrate are read in and, on the basis thereof, a mask image is generated in the form of a data structure with contact holes and with auxiliary structures on the computer system. Afterwards, contact hole biases are determined by means of an optical proximity correction method and the relevant contact holes are corrected on the basis of these contact hole biases. By means of subsequent imaging simulation of the mask image on the semiconductor substrate, undesired imaging auxiliary structures and contact holes deviating from specified tolerances on the semiconductor substrate are detected and corrected. During the imaging simulation of the mask image, a mask bias is employed in order to compensate for three-dimensional mask effects. A real mask can be produced on the basis of the mask image thus determined.

摘要翻译： 在要在计算机系统上执行的方法中，首先读取半导体衬底的设计数据，并且基于此，以具有接触孔和辅助的数据结构的形式生成掩模图像 计算机系统上的结构。 之后，通过光学邻近校正方法确定接触孔偏压，并且基于这些接触孔偏压校正相关的接触孔。 通过对半导体衬底上的掩模图像的后续成像模拟，检测和校正在半导体衬底上偏离特定公差的不期望的成像辅助结构和接触孔。 在掩模图像的成像模拟期间，采用掩模偏压来补偿三维掩模效应。 可以基于如此确定的掩模图像来生成真实的掩模。

公开(公告)号：US06993455B2

公开(公告)日：2006-01-31

申请号：US11029573

申请日：2005-01-05

申请人： Roderick Koehle ,  Reinhard Pufall

发明人： Roderick Koehle ,  Reinhard Pufall

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： In the method, which is to be carried out on a computer system, firstly design data of a semiconductor substrate are read in and, on the basis thereof, a mask image is generated in the form of a data structure with contact holes and with auxiliary structures on the computer system. Afterwards, contact hole biases are determined by means of an optical proximity correction method and the relevant contact holes are corrected on the basis of these contact hole biases. By means of subsequent imaging simulation of the mask image on the semiconductor substrate, undesired imaging auxiliary structures and contact holes deviating from specified tolerances on the semiconductor substrate are detected and corrected. During the imaging simulation of the mask image, a mask bias is employed in order to compensate for three-dimensional mask effects. A real mask can be produced on the basis of the mask image thus determined.

摘要翻译： 在要在计算机系统上执行的方法中，首先读取半导体衬底的设计数据，并且基于此，以具有接触孔和辅助的数据结构的形式生成掩模图像 计算机系统上的结构。 之后，通过光学邻近校正方法确定接触孔偏压，并且基于这些接触孔偏压校正相关的接触孔。 通过对半导体衬底上的掩模图像的后续成像模拟，检测和校正在半导体衬底上偏离特定公差的不期望的成像辅助结构和接触孔。 在掩模图像的成像模拟期间，采用掩模偏压来补偿三维掩模效应。 可以基于如此确定的掩模图像来生成真实的掩模。