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1.发明申请PHOTOCROSSLINKABLE POLYIMIDE POLYMER, MANUFACTURING METHODS FOR THE SAME AND MEMORY DEVICES USING THE SAME 有权可光聚合聚酰亚胺聚合物，其相同的制造方法和使用该聚合物的记忆装置公开(公告)号：US20130140532A1
公开(公告)日：2013-06-06
申请号：US13639530
申请日：2011-03-31
申请人： Moonhor Ree , Samdae Park , Suk Gyu Ham , Jin Chul Kim , Yong-gi Ko , Jun Man Choi , Taek Joon Lee , Dong Min Kim , Kyungtae Kim , Wonsang Kwon
发明人： Moonhor Ree , Samdae Park , Suk Gyu Ham , Jin Chul Kim , Yong-gi Ko , Jun Man Choi , Taek Joon Lee , Dong Min Kim , Kyungtae Kim , Wonsang Kwon
CPC分类号： H01L51/0035 , C08G73/101 , G11C13/0016 , G11C13/04 , G11C2213/15 , G11C2213/72 , H01L51/0002 , H01L51/0591 , H01L51/0595
摘要： The present invention relates to a polymer memory device and to a production method for the same, and relates to a novel photocrosslinkable polymer compound able to be used in a polymer memory device, to a novel non-volatile memory device in which an active layer between an upper electrode and a lower electrode comprises a photocrosslinkable polyimide polymer, and to a production method for the same. In the polymer memory device, the photocrosslinkable polyimide polymer is used as an active layer.
摘要翻译： 本发明涉及一种聚合物记忆装置及其制备方法，涉及能够用于聚合物存储装置的新颖的可光致交联的高分子化合物，涉及一种新颖的非易失性存储装置，其中在 上电极和下电极包括光可交联聚酰亚胺聚合物及其制备方法。 在聚合物存储装置中，可光交联聚酰亚胺聚合物用作有源层。
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2.发明授权Photocrosslinkable polyimide polymer, manufacturing methods for the same memory devices using the same 有权可光交联聚酰亚胺聚合物，使用其的相同存储器件的制造方法公开(公告)号：US08981353B2
公开(公告)日：2015-03-17
申请号：US13639530
申请日：2011-03-31
申请人： Moonhor Ree , Samdae Park , Suk Gyu Ham , Jin Chul Kim , Yong-gi Ko , Jun Man Choi , Taek Joon Lee , Dong Min Kim , Kyungtae Kim , Wonsang Kwon
发明人： Moonhor Ree , Samdae Park , Suk Gyu Ham , Jin Chul Kim , Yong-gi Ko , Jun Man Choi , Taek Joon Lee , Dong Min Kim , Kyungtae Kim , Wonsang Kwon
CPC分类号： H01L51/0035 , C08G73/101 , G11C13/0016 , G11C13/04 , G11C2213/15 , G11C2213/72 , H01L51/0002 , H01L51/0591 , H01L51/0595
摘要： The present invention relates to a polymer memory device and to a production method for the same, and relates to a novel photocrosslinkable polymer compound able to be used in a polymer memory device, to a novel non-volatile memory device in which an active layer between an upper electrode and a lower electrode comprises a photocrosslinkable polyimide polymer, and to a production method for the same. In the polymer memory device, the photocrosslinkable polyimide polymer is used as an active layer.
摘要翻译： 本发明涉及一种聚合物记忆装置及其制备方法，涉及能够用于聚合物存储装置的新颖的可光致交联的高分子化合物，涉及一种新颖的非易失性存储装置，其中在 上电极和下电极包括光可交联聚酰亚胺聚合物及其制备方法。 在聚合物存储装置中，可光交联聚酰亚胺聚合物用作有源层。
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