TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH BURIED OXIDE STRIP ACOUSTIC CONFINEMENT STRUCTURES

    公开(公告)号:US20250096769A1

    公开(公告)日:2025-03-20

    申请号:US18966231

    申请日:2024-12-03

    Abstract: A filter device is provided that includes a plurality of bulk acoustic resonators that each includes a piezoelectric layer; a conductor pattern on the piezoelectric layer and including an interdigital transducer (IDT) having a first plurality of fingers extending from a first busbar and a second plurality of fingers extending from the second busbar, such that the first plurality of fingers and the second plurality of fingers are interleaved with each other; a dielectric strip that overlaps a margin of the first plurality of fingers and that extends into a gap between ends of the first plurality of fingers and the second busbar. Moreover, a thickness ts of the dielectric strip a first bulk acoustic resonator of the plurality of bulk acoustic resonators is different than a thickness ts of the dielectric strip of a second bulk acoustic resonator of the plurality of bulk acoustic resonators.

    TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR

    公开(公告)号:US20250015774A1

    公开(公告)日:2025-01-09

    申请号:US18893017

    申请日:2024-09-23

    Abstract: An acoustic resonator device is provided that includes a wafer having a wafer surface and a wafer conductor pattern on the wafer surface; a piezoelectric layer having front and back surfaces, a portion of the piezoelectric layer being over a cavity between the wafer and the piezoelectric layer, and the wafer conductor pattern; a device conductor pattern including a first metal layer including an interdigital transducer on the front surface of the piezoelectric layer and facing the wafer, and a second metal layer attached to a portion of the device conductor pattern to provide an electrical connection between the IDT and the wafer conductor pattern. The second metal layer is bonded to the wafer conductor pattern and the piezoelectric layer comprises openings extending therethrough.

    TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATORS WITH MULTIPLE PIEZOELECTRIC MEMBRANE THICKNESSES ON THE SAME CHIP

    公开(公告)号:US20250062747A1

    公开(公告)日:2025-02-20

    申请号:US18935753

    申请日:2024-11-04

    Abstract: A filter device is provided that includes a substrate having a surface; and a piezoelectric layer over a first cavity and a second cavity. The piezoelectric layer is attached to the surface of the substrate either directly or via one or more intermediate layers. An area of the piezoelectric layer has a first thickness for at least one first resonator that forms at least one first membrane over the first cavity. Moreover, an area of the piezoelectric layer has a second thickness for at least one second resonator that forms at least one second membrane over the second cavity, the second thickness being thinner than the first thickness. A bottom of the first cavity that is opposite from the at least one first membrane extends farther down away from the piezoelectric layer than a bottom of the second cavity that is opposite from the at least one second membrane.

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