公开(公告)号：US20240274654A1

公开(公告)日：2024-08-15

申请号：US18437637

申请日：2024-02-09

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Larry BUFFLE ,  Frédéric Voiron ,  Michal Pomorski ,  Baptiste Truffet

IPC: H01G4/08 ,  H01L21/02

CPC classification number: H01L28/90 ,  H01L21/02376

Abstract: An electrical device that includes a capacitor with a monolithic diamond region having: a diamond substrate; a first electrode layer on the diamond substrate; an intermediate layer on the first electrode layer having a dislocation density comprised between 105.cm −2 to 109.cm−2; and a second electrode layer on the intermediate layer, wherein the first electrode layer and the second electrode layer are doped with p-type impurities and the intermediate layer is doped with a deep level dopant of type n that passivates the dislocations of the intermediate layer, such that the capacitor is formed by the monolithic diamond region between the stack formed by the first electrode layer and the second electrode layer separated by the intermediate layer.