公开(公告)号：US20200321927A1

公开(公告)日：2020-10-08

申请号：US16839226

申请日：2020-04-03

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Toshikazu TERASHIMA ,  Fumio HARIMA ,  Makoto ITOU ,  Satoshi TANAKA ,  Kazuo WATANABE ,  Satoshi ARAYASHIKI ,  Chikara YOSHIDA

IPC: H03F3/213 ,  H01L29/417 ,  H01L27/06 ,  H01L29/423 ,  H01L29/737

Abstract: A power amplifier apparatus includes a semiconductor substrate, a plurality of first transistors on the semiconductor substrate, a plurality of second transistors, at least one collector terminal electrically connected to collectors of the plurality of first transistors, a first inductor having a first end electrically connected to the collector terminal and a second end electrically connected to a power supply potential, at least one emitter terminal electrically connected to emitters of the plurality of second transistors and adjacent to the collector terminal in a second direction, a second inductor having a first end electrically connected to the emitter terminal and a second end electrically connected to a reference potential, and at least one capacitor having a first end electrically connected to the collectors of the plurality of first transistors and a second end electrically connected to the emitters of the plurality of second transistors.