公开(公告)号：US20200313629A1

公开(公告)日：2020-10-01

申请号：US16828630

申请日：2020-03-24

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Toshikazu TERASHIMA ,  Satoshi TANAKA ,  Kazuo WATANABE ,  Makoto ITOU ,  Jun ENOMOTO

IPC: H03F1/30 ,  H03F1/56 ,  H03F1/02 ,  H03F3/213 ,  H03F3/19

Abstract: A power amplifier circuit includes a first transistor, a capacitor, and a second transistor. The first transistor has an emitter electrically connected to a reference potential, a base, and a collector electrically connected to a first power supply potential. A first end of the capacitor is electrically connected to the collector of the first transistor. The second transistor has an emitter electrically connected to a second end of the capacitor and electrically connected to the reference potential, a base, and a collector electrically connected to the first power supply potential. An RF output signal obtained by amplifying the RF input signal is output from the collector of the second transistor. A second bias circuit includes a third transistor having a collector electrically connected to a second power supply potential, a base, and an emitter from which the second bias current or voltage is output.

公开(公告)号：US20220263477A1

公开(公告)日：2022-08-18

申请号：US17650674

申请日：2022-02-11

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Toshikazu TERASHIMA ,  Yuri HONDA ,  Takashi YAMADA

IPC: H03F1/30 ,  H03F3/21 ,  H03F1/56 ,  H03F1/02

Abstract: A power amplifier circuit includes a first transistor having the base coupled to an input terminal, the collector coupled to an output terminal, and the emitter coupled to ground, a first bias circuit coupled to the base of the first transistor via the first resistance element, a second transistor having the base coupled to the input terminal, the collector coupled to the output terminal, and the emitter coupled to ground, a second bias circuit coupled to the base of the second transistor via the second resistance element, and a first impedance circuit having a first end coupled between the base of the first transistor and the input terminal and a second end coupled between the first bias circuit and the first resistance element and being configured to be opened for a direct-current component and to be closed for an alternating-current component.

公开(公告)号：US20200321927A1

公开(公告)日：2020-10-08

申请号：US16839226

申请日：2020-04-03

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Toshikazu TERASHIMA ,  Fumio HARIMA ,  Makoto ITOU ,  Satoshi TANAKA ,  Kazuo WATANABE ,  Satoshi ARAYASHIKI ,  Chikara YOSHIDA

IPC: H03F3/213 ,  H01L29/417 ,  H01L27/06 ,  H01L29/423 ,  H01L29/737

Abstract: A power amplifier apparatus includes a semiconductor substrate, a plurality of first transistors on the semiconductor substrate, a plurality of second transistors, at least one collector terminal electrically connected to collectors of the plurality of first transistors, a first inductor having a first end electrically connected to the collector terminal and a second end electrically connected to a power supply potential, at least one emitter terminal electrically connected to emitters of the plurality of second transistors and adjacent to the collector terminal in a second direction, a second inductor having a first end electrically connected to the emitter terminal and a second end electrically connected to a reference potential, and at least one capacitor having a first end electrically connected to the collectors of the plurality of first transistors and a second end electrically connected to the emitters of the plurality of second transistors.