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公开(公告)号：US10256778B2
公开(公告)日：2019-04-09
申请号：US16013039
申请日：2018-06-20
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shota Ishihara , Seiko Ono , Yusuke Shimamune , Fuminori Morisawa , Shizuki Nakajima , Yuri Honda , Kazuhiro Koshio , Masato Sato
Abstract: A power amplifier module includes a first current source that outputs a first current corresponding to a level control voltage for controlling a signal level of an amplified signal, a second current source that outputs a second current corresponding to the level control voltage, a first transistor in which an input signal and a first bias current are supplied to a base and an emitter is grounded, a second transistor in which an emitter is connected to a collector of the first transistor, the second current is supplied to a base, and a first amplified signal obtained by amplifying the input signal is output from a collector, and a third transistor in which the first current is supplied to a collector, a bias control current or voltage is supplied to a base, and the first bias current is supplied from an emitter to the base of the first transistor.
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Patent Agency Ranking
公开(公告)号：US20180240771A1
公开(公告)日：2018-08-23
申请号：US15901335
申请日：2018-02-21
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shizuki Nakajima
IPC: H01L23/00
Abstract: A method for manufacturing a semiconductor device includes (i) a step of preparing a first semiconductor chip having a first electrode pad thereon and a second semiconductor chip having a second electrode pad thereon and larger in thickness than the first semiconductor chip, the second electrode pad being larger in size than the first electrode pad, (ii) a step of mounting the first semiconductor chip and the second semiconductor chip on the same planarized surface of a substrate having a uniform thickness, (iii) a step of bonding a ball formed by heating and melting a bonding wire to the second electrode pad, (iv) a step of first-bonding the bonding wire to the first electrode pad, and (v) a step of second-bonding the bonding wire to the ball.
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公开(公告)号：US10044330B2
公开(公告)日：2018-08-07
申请号：US15710426
申请日：2017-09-20
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shota Ishihara , Seiko Ono , Yusuke Shimamune , Fuminori Morisawa , Shizuki Nakajima , Yuri Honda , Kazuhiro Koshio , Masato Sato
IPC: H03F3/21
Abstract: A power amplifier module includes a first current source that outputs a first current corresponding to a level control voltage for controlling a signal level of an amplified signal, a second current source that outputs a second current corresponding to the level control voltage, a first transistor in which an input signal and a first bias current are supplied to a base and an emitter is grounded, a second transistor in which an emitter is connected to a collector of the first transistor, the second current is supplied to a base, and a first amplified signal obtained by amplifying the input signal is output from a collector, and a third transistor in which the first current is supplied to a collector, a bias control current or voltage is supplied to a base, and the first bias current is supplied from an emitter to the base of the first transistor.
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公开(公告)号：US11417625B2
公开(公告)日：2022-08-16
申请号：US17020459
申请日：2020-09-14
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shizuki Nakajima
IPC: H01L23/00
Abstract: A method for manufacturing a semiconductor device includes (i) a step of preparing a first semiconductor chip having a first electrode pad thereon and a second semiconductor chip having a second electrode pad thereon and larger in thickness than the first semiconductor chip, the second electrode pad being larger in size than the first electrode pad, (ii) a step of mounting the first semiconductor chip and the second semiconductor chip on the same planarized surface of a substrate having a uniform thickness, (iii) a step of bonding a ball formed by heating and melting a bonding wire to the second electrode pad, (iv) a step of first-bonding the bonding wire to the first electrode pad, and (v) a step of second-bonding the bonding wire to the ball.
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公开(公告)号：US10804238B2
公开(公告)日：2020-10-13
申请号：US15901335
申请日：2018-02-21
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shizuki Nakajima
IPC: H01L23/00 , H01L25/065
Abstract: A method for manufacturing a semiconductor device includes (i) a step of preparing a first semiconductor chip having a first electrode pad thereon and a second semiconductor chip having a second electrode pad thereon and larger in thickness than the first semiconductor chip, the second electrode pad being larger in size than the first electrode pad, (ii) a step of mounting the first semiconductor chip and the second semiconductor chip on the same planarized surface of a substrate having a uniform thickness, (iii) a step of bonding a ball formed by heating and melting a bonding wire to the second electrode pad, (iv) a step of first-bonding the bonding wire to the first electrode pad, and (v) a step of second-bonding the bonding wire to the ball.
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公开(公告)号：US10476454B2
公开(公告)日：2019-11-12
申请号：US16280180
申请日：2019-02-20
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shota Ishihara , Seiko Ono , Yusuke Shimamune , Fuminori Morisawa , Shizuki Nakajima , Yuri Honda , Kazuhiro Koshio , Masato Sato
Abstract: A power amplifier module includes a first current source that outputs a first current corresponding to a level control voltage for controlling a signal level of an amplified signal, a second current source that outputs a second current corresponding to the level control voltage, a first transistor in which an input signal and a first bias current are supplied to a base and an emitter is grounded, a second transistor in which an emitter is connected to a collector of the first transistor, the second current is supplied to a base, and a first amplified signal obtained by amplifying the input signal is output from a collector, and a third transistor in which the first current is supplied to a collector, a bias control current or voltage is supplied to a base, and the first bias current is supplied from an emitter to the base of the first transistor.
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