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公开(公告)号：US10659002B2
公开(公告)日：2020-05-19
申请号：US16108165
申请日：2018-08-22
发明人： Koji Yamamoto , Tsutomu Takai , Seiji Kai , Hisashi Yamazaki , Yuji Miwa , Takashi Yamane , Noriyoshi Ota , Atsushi Tanaka
摘要： An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode has a width of about 6 μm and extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.
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公开(公告)号：US10476471B2
公开(公告)日：2019-11-12
申请号：US16056580
申请日：2018-08-07
IPC分类号： H01L41/083 , H03H9/02 , H03H9/05 , H01L41/047 , H03H9/17 , H01L27/20 , H01L23/62 , H01L23/31 , H01L23/522 , H01L41/187 , H01L41/053 , H03H9/13 , H01L41/18 , H01L23/48 , H03H9/10 , H03H9/145 , H01L29/866 , H01L23/00 , H03H9/64
摘要： A composite device includes a silicon substrate including first and second main surfaces on opposite sides, a semiconductor device adjacent to at least one of the first and second main surfaces, and an acoustic wave device including a silicon oxide film directly or indirectly disposed on the first main surface of the silicon substrate, a piezoelectric layer directly disposed on the silicon oxide film, and an IDT disposed on the piezoelectric layer. The piezoelectric layer has a thickness of not greater than about 2.5λ where λ is a wavelength defined by an electrode finger pitch of the IDT.
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公开(公告)号：US12119804B2
公开(公告)日：2024-10-15
申请号：US17701985
申请日：2022-03-23
发明人： Takashi Yamane , Sho Nagatomo , Tetsuya Kimura
CPC分类号： H03H9/02157 , H03H9/02015 , H03H9/0211 , H03H9/13 , H03H9/205
摘要： An acoustic wave device includes a piezoelectric layer, a first electrode, a second electrode, a first divided resonator, a second divided resonator, and a support substrate. The support substrate includes first and second energy confinement layers. The first energy confinement layer at least partially overlaps with a first region of the piezoelectric layer. The second energy confinement layer at least partially overlaps with a second region of the piezoelectric layer. The first and second energy confinement layers are integrally provided in the support substrate.
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公开(公告)号：US10756698B2
公开(公告)日：2020-08-25
申请号：US16369005
申请日：2019-03-29
发明人： Takashi Yamane , Tsutomu Takai , Toru Takeshita
摘要： An elastic wave device includes a multilayer film including a piezoelectric thin film laminated on a support substrate. In a region outside a region in which an IDT electrode is provided, the multilayer film is not disposed. A first insulating layer extends from at least a portion of the region to a region on the piezoelectric thin film. A wiring electrode extends to a region on the first insulating layer from a region on the piezoelectric thin film and to extend to a region on a portion of the first insulating layer located in the region. A support layer including a cavity defining a hollow space is provided on the support substrate. The support layer includes, on the wiring electrode, a portion extending from the region to a region above an inner end of the first insulating layer.
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公开(公告)号：US11984869B2
公开(公告)日：2024-05-14
申请号：US17223061
申请日：2021-04-06
CPC分类号： H03H9/02574 , H03H9/14502 , H03H9/15 , H10N30/87
摘要： An acoustic wave device includes a piezoelectric body including first and second main surfaces facing each other, an IDT electrode provided on the first main surface of the piezoelectric body and including electrode fingers, a high acoustic velocity member on the second main surface side of the piezoelectric body, in which an acoustic velocity of a propagating bulk wave is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric body, and a first dielectric film provided on an upper surface of the electrode fingers, in which a portion where a dielectric is not present is provided between the electrode fingers of the IDT electrode.
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公开(公告)号：US10659001B2
公开(公告)日：2020-05-19
申请号：US15831471
申请日：2017-12-05
发明人： Koji Yamamoto , Tsutomu Takai , Seiji Kai , Hisashi Yamazaki , Yuji Miwa , Takashi Yamane
摘要： An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.
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公开(公告)号：US09196818B2
公开(公告)日：2015-11-24
申请号：US13845205
申请日：2013-03-18
发明人： Takashi Yamane , Takeshi Nakao
IPC分类号： H01L41/187 , H01L41/18 , H03H9/02
CPC分类号： H01L41/18 , H03H9/0222 , H03H9/02559 , H03H9/02574
摘要： A boundary acoustic wave device includes an LiTaO3 piezoelectric substrate, a first dielectric medium layer disposed on the piezoelectric substrate, a second dielectric medium layer disposed on the first medium layer and having a sound velocity different from the first medium layer, and an interdigital electrode disposed at the boundary between the piezoelectric substrate and the first medium layer. The sound velocity of the first medium layer is less than the sound velocity of LiTaO3. The sound velocity of the second medium layer is greater than the sound velocity of LiTaO3. The inequality (h/λ)×a≦0.05 is satisfied, where H is the thickness of the first medium layer, h is the thickness of the interdigital electrode, λ is the period of electrode fingers of the interdigital electrode, and a is the ratio of the density of a metal of the interdigital electrode to the density of Au.
摘要翻译： 声界面波装置包括LiTaO3压电基板，设置在压电基板上的第一介电层，设置在第一介质层上并且具有与第一介质层不同的声速的第二介质介质层， 在压电基板和第一介质层之间的边界处。 第一介质层的声速小于LiTaO3的声速。 第二介质层的声速大于LiTaO3的声速。 满足不等式（h /λ）×a＆nlE; 0.05，其中H是第一介质层的厚度，h是叉指电极的厚度，λ是叉指电极的电极指的周期，a是 指数电极的金属密度与Au的密度之比。
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公开(公告)号：US11368138B2
公开(公告)日：2022-06-21
申请号：US16274279
申请日：2019-02-13
发明人： Yasunobu Hayashi , Takashi Yamane
IPC分类号： H03H9/05 , H03H9/145 , H01L41/047 , H03H9/25 , H03H9/02 , H01L41/187 , H03H3/08
摘要： An elastic wave device includes a spacer layer on or above a support substrate and outside a piezoelectric film as seen in a plan view from a thickness direction of the support substrate. A cover layer is disposed on the spacer layer. A through electrode extends through the spacer layer and the cover layer and is electrically connected to the wiring electrode. The wiring electrode includes a first section overlapping the through electrode as seen in the plan view from the thickness direction, a second section overlapping the piezoelectric film as seen in the plan view from the thickness direction, and a step portion defining a step in the thickness direction between the first section and the second section. The spacer layer includes an end portion embedded in the cover layer.
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公开(公告)号：US10886896B2
公开(公告)日：2021-01-05
申请号：US16532523
申请日：2019-08-06
发明人： Takashi Yamane
摘要： An acoustic wave device includes IDT electrodes with different wavelengths determined by electrode finger pitches. A piezoelectric thin film is laminated directly on or indirectly above a high acoustic velocity member. A silicon oxide film is laminated on the piezoelectric thin film, IDT electrodes are laminated on the silicon oxide film. When λ represents a wavelength of one of the IDT electrodes having the shortest wavelength, y represents a wavelength normalized film thickness (%) that is a percentage of a film thickness of the piezoelectric thin film with respect to the wavelength λ, and x represents a wavelength normalized film thickness (%) that is a percentage of a film thickness of the silicon oxide film with respect to the wavelength λ, y is equal to or smaller than about 350% and y
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公开(公告)号：US20180097502A1
公开(公告)日：2018-04-05
申请号：US15831471
申请日：2017-12-05
发明人： Koji Yamamoto , Tsutomu Takai , Seiji Kai , Hisashi Yamazaki , Yuji Miwa , Takashi Yamane
CPC分类号： H03H9/145 , H03H9/02574 , H03H9/02897 , H03H9/1071 , H03H9/178 , H03H9/25 , H03H9/547
摘要： An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.
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