公开(公告)号：US20220139795A1

公开(公告)日：2022-05-05

申请号：US17580683

申请日：2022-01-21

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yohei YAMAGUCHI ,  Tomoyuki ASHIMINE ,  Yasuhiro MURASE

IPC: H01L23/31 ,  H01L49/02 ,  H01G4/33 ,  H01G4/224

Abstract: A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface; a dielectric film on the first main surface, the dielectric film having an electrode layer disposing portion and a protective layer covering portion, and a thickness of the protective layer covering portion in a first outer peripheral end of the dielectric film is smaller than a thickness of the electrode layer disposing portion; a first electrode layer on the electrode layer disposing portion; a first protective layer covering a second outer peripheral end of the first electrode layer and at least a part of the protective layer covering portion; and a second protective layer covering the first protective layer, wherein the first protective layer has a relative permittivity lower than that of the second protective layer, and the second protective layer has moisture resistance higher than that of the first protective layer.

公开(公告)号：US20240420899A1

公开(公告)日：2024-12-19

申请号：US18820634

申请日：2024-08-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Tomoyuki ASHIMINE ,  Satoshi SHINDO ,  Koshi HIMEDA

IPC: H01G9/10 ,  H01G9/012 ,  H01G9/025

Abstract: An electronic component that includes: a sealing body having a first plate, a cover part spaced form the first plate, and a sealing metal layer; a functional part spaced from the first plate and in an airtight internal space of the sealing body; a filling resin part filling a space between the sealing body and the functional part; and a via conductor in a first through hole extending through the first plate and in a second through hole extending through the filling resin part and communicating with the first through hole, the via conductor being electrically connected to a pair of electrodes of the functional part. A water vapor transmission rate of the cover part is less than or equal to one-tenth of a water vapor transmission rate of the filling resin part having the same film thickness, or the cover part is made of glass or metal.

公开(公告)号：US20220181436A1

公开(公告)日：2022-06-09

申请号：US17651993

申请日：2022-02-22

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Tomoyuki ASHIMINE ,  Yuji IRIE ,  Yasuhiro MURASE

IPC: H01L29/06 ,  H01L29/94 ,  H01L29/66

Abstract: A semiconductor device is provided that includes a semiconductor substrate having a first main surface and a second main surface facing each other; a dielectric layer laminated on the first main surface of the semiconductor substrate; a first electrode layer laminated on the dielectric layer; and a protective layer covering at least an outer peripheral end of the dielectric layer and an outer peripheral end of the first electrode layer. Moreover, the protective layer is provided to expose an outer peripheral end on the first main surface of the semiconductor substrate. The semiconductor substrate includes a high-resistance region positioned at least directly under an outer peripheral end of the protective layer.