公开(公告)号：US20210250015A1

公开(公告)日：2021-08-12

申请号：US17241126

申请日：2021-04-27

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasuharu NAKAI ,  Katsuya DAIMON

IPC: H03H9/64 ,  H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H03H9/72 ,  H04B1/40 ,  H03F3/195 ,  H03F3/72 ,  H03F3/24 ,  H04B1/00

Abstract: A first filter of a multiplexer includes serial resonators and parallel resonators that are acoustic wave resonators. A first of the serial resonators that is closer to a common terminal than the other serial resonators is connected to the common terminal without the parallel resonators interposed therebetween. Each of the elastic wave resonators includes a substrate having piezoelectricity, an IDT electrode provided on the substrate, and a dielectric layer provided on the substrate to cover the IDT electrode. A thickness of the dielectric layer of the first serial resonator is smaller than a thickness of each of the dielectric layers of the remainder of the elastic wave resonators.

公开(公告)号：US20190288668A1

公开(公告)日：2019-09-19

申请号：US16429098

申请日：2019-06-03

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hideaki TAKAHASHI ,  Hirokazu SAKAGUCHI ,  Yasuharu NAKAI

IPC: H03H9/145 ,  H03H9/25 ,  H03H9/64 ,  H03H9/72 ,  H03H9/02

Abstract: An elastic wave device includes a piezoelectric substrate, an IDT electrode on the piezoelectric substrate, and a silicon oxide film arranged on the piezoelectric substrate to cover the IDT electrode. The IDT electrode includes first and second electrode layers laminated on each other, the first electrode layer is made of metal or an alloy with a density higher than a density of metal of the second electrode layer and a density of silicon oxide of the silicon oxide film, the piezoelectric substrate is made of LiNbO3 and θ is in a range of equal to or greater than about 8° and equal to or less than about 32° with Euler Angles (0°±5°, θ, 0°±10°) of the piezoelectric substrate, and the silicon oxide film contains hydrogen atoms, hydroxyl groups, or silanol groups.

公开(公告)号：US20240413807A1

公开(公告)日：2024-12-12

申请号：US18630218

申请日：2024-04-09

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasuharu NAKAI

IPC: H03H9/145 ,  H03H9/02 ,  H03H9/25 ,  H03H9/64

Abstract: An acoustic wave device includes a substrate, an IDT electrode on the substrate, and a dielectric film on the substrate. The substrate includes a piezoelectric layer, a low acoustic velocity layer, and a high acoustic velocity layer in this order. The IDT electrode includes electrode fingers and busbar electrodes that connect the electrode fingers. On the piezoelectric layer, the dielectric film is located only in a region where the electrode fingers and the busbar electrodes are not located, between the busbar electrodes in a plan view of the substrate. A film thickness of the dielectric film is smaller than a film thickness of the electrode fingers.

公开(公告)号：US20190181836A1

公开(公告)日：2019-06-13

申请号：US16199279

申请日：2018-11-26

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasuharu NAKAI ,  Katsuya DAIMON

IPC: H03H9/64 ,  H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H03H9/72 ,  H04B1/40

Abstract: A first filter of a multiplexer includes serial resonators and parallel resonators that are acoustic wave resonators. A first of the serial resonators that is closer to a common terminal than the other serial resonators is connected to the common terminal without the parallel resonators interposed therebetween. Each of the elastic wave resonators includes a substrate having piezoelectricity, an IDT electrode provided on the substrate, and a dielectric layer provided on the substrate to cover the IDT electrode. A thickness of the dielectric layer of the first serial resonator is smaller than a thickness of each of the dielectric layers of the remainder of the elastic wave resonators.

公开(公告)号：US20180287586A1

公开(公告)日：2018-10-04

申请号：US15924307

申请日：2018-03-19

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Katsuya DAIMON ,  Akira MICHIGAMI ,  Yasuharu NAKAI ,  Toshimaro YONEDA

IPC: H03H9/25 ,  H01L41/187 ,  H01L41/047 ,  H03H9/02 ,  H03H9/145

Abstract: An elastic wave device includes a piezoelectric substrate, elastic wave resonators on or in the piezoelectric substrate, and a dielectric film disposed on the piezoelectric substrate and covering the elastic wave resonators. The elastic wave resonators includes respective IDT electrodes on the piezoelectric substrate. When a wavelength specified by an electrode finger pitch of the IDT electrode is denoted as λ, at least two of the elastic wave resonators have the different wavelengths. In two of the elastic wave resonators having different wavelengths, a film thickness of the IDT electrode in the elastic wave resonator having the longer wavelength is not greater than that of the IDT electrode in the elastic wave resonator having the shorter wavelength. Film thicknesses of the IDT electrodes in at least two of the elastic wave resonators are different from each other. The elastic wave device utilizes a Rayleigh wave.