公开(公告)号：US20250167757A1

公开(公告)日：2025-05-22

申请号：US19030233

申请日：2025-01-17

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Katsuya DAIMON

IPC: H03H9/02 ,  H03H9/17 ,  H03H9/56

Abstract: An acoustic wave device includes a piezoelectric substrate including a support including a support substrate and a piezoelectric film on the support and including a piezoelectric layer, and an IDT electrode on the piezoelectric layer and including first and second busbars and first and second electrode fingers. An acoustic reflection portion is in the support overlapping the IDT electrode. When a thickness of the piezoelectric film is d and a center-to-center distance between the adjacent electrode fingers is p, d/p is about 0.5 or smaller. When viewed in an electrode finger orthogonal direction, a region in which the adjacent electrode fingers overlap each other is an intersecting region. A region between the intersecting region and the first and second busbars includes first and second gap regions. The intersecting region includes a central region and first and second edge regions extending across the central region in the electrode finger extending direction.

公开(公告)号：US20250119114A1

公开(公告)日：2025-04-10

申请号：US18981727

申请日：2024-12-16

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Katsuya DAIMON ,  Sho NAGATOMO

IPC: H03H9/13 ,  H03H9/02 ,  H03H9/17

Abstract: An acoustic wave device includes a piezoelectric layer, a first comb-shaped electrode on the piezoelectric layer, including a first busbar and first electrode fingers, and connected to an input potential, a second comb-shaped electrode on the piezoelectric layer, including a second busbar and second electrode fingers interdigitated with the first electrode fingers, and connected to an output potential, and a reference potential electrode connected to a reference potential and including third electrode fingers on the piezoelectric layer aligned with the first and second electrode fingers, and a connection electrode connecting adjacent third electrode fingers. An order in which a first electrode finger, a second electrode finger, and a third electrode finger are arranged is such that, starting from the first electrode finger, the first electrode finger, the third electrode finger, the second electrode finger, and the third electrode finger define one period.

公开(公告)号：US20240291459A1

公开(公告)日：2024-08-29

申请号：US18655594

申请日：2024-05-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Katsuya DAIMON ,  Tetsuya KIMURA

IPC: H03H9/02

CPC classification number: H03H9/02023 ,  H03H9/02031 ,  H03H9/02157

Abstract: An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, made of lithium niobate or lithium tantalate, and including a first main surface and a second main surface that oppose each other, and an interdigital transducer electrode on the first main surface of the piezoelectric layer. An acoustic reflection portion is at a position overlapping at least a portion of the IDT electrode in a plan view when viewed along a laminating direction of the support and the piezoelectric layer. The IDT electrode includes a first busbar and a second busbar that oppose each other, first electrode fingers each including one end connected to the first busbar, and second electrode fingers each including one end connected to the second busbar and being interdigitated with the plurality of first electrode fingers.

公开(公告)号：US20240154596A1

公开(公告)日：2024-05-09

申请号：US18415709

申请日：2024-01-18

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Katsuya DAIMON

IPC: H03H9/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/56

CPC classification number: H03H9/02086 ,  H03H9/02031 ,  H03H9/02228 ,  H03H9/132 ,  H03H9/173 ,  H03H9/175 ,  H03H9/176 ,  H03H9/568

Abstract: An acoustic wave device includes a support, a piezoelectric layer on the support, and an IDT electrode on the piezoelectric layer and includes a pair of busbars and electrode fingers. The support includes an acoustic reflection portion overlapping at least a portion of the IDT electrode. d/p is about 0.5 or less. Some of the electrode fingers are connected to one of the busbars, others of the electrode fingers are connected to another of the busbars. When viewed from a direction in which adjacent electrode fingers face each other, a region where the adjacent electrode fingers overlap each other is an intersection region. A region between the intersection region and the pair of busbars includes a pair of gap regions. A mass addition film is provided in at least a portion of at least one of the gap regions.

公开(公告)号：US20230032680A1

公开(公告)日：2023-02-02

申请号：US17961604

申请日：2022-10-07

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Munehisa WATANABE ,  Yasumasa TANIGUCHI ,  Katsuya DAIMON ,  Takuro OKADA

IPC: H03H9/25 ,  H03H9/02

Abstract: A piezoelectric device includes a support substrate, an intermediate layer on the support substrate in a first region, a piezoelectric layer on the intermediate layer, a functional element on the piezoelectric layer, and an insulating layer. The insulating layer is located on the support substrate in a second region adjacent to the first region. A surface roughness of the support substrate in the second region is greater than a surface roughness of the support substrate in the first region.

公开(公告)号：US20220278667A1

公开(公告)日：2022-09-01

申请号：US17750435

申请日：2022-05-23

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Koji YAMAMOTO ,  Katsuya DAIMON

IPC: H03H9/02 ,  H03H9/145 ,  H03H9/25

Abstract: An acoustic wave device includes first and second electrode fingers on a piezoelectric layer, and third and fourth electrode fingers and a plurality of fourth electrode fingers are provided on the piezoelectric layer. A connection section includes second and third busbars. The second busbar is on the piezoelectric layer and is connected to one end of each of the second electrode fingers. The third busbar is on the piezoelectric layer and is connected to one end of each of the third electrode fingers. A stress relaxation layer is between the connection section and the piezoelectric layer. The stress relaxation layer does not extend to any of a gap between each of the first electrode fingers and the second busbar and a gap between each of the fourth electrode fingers and the third busbar in a plan view from a thickness direction of a support substrate.

公开(公告)号：US20220216844A1

公开(公告)日：2022-07-07

申请号：US17704519

申请日：2022-03-25

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takashi YAMANE ,  Tetsuya KIMURA ,  Sho NAGATOMO ,  Katsuya DAIMON ,  Hideki IWAMOTO

IPC: H03H9/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/56

Abstract: An acoustic wave device includes a piezoelectric layer and first and second electrodes. The first and second electrodes face each other in a direction intersecting with a thickness direction of the piezoelectric layer. The acoustic wave device uses a bulk wave of a thickness-shear primary mode. A material of the piezoelectric layer is lithium niobate or lithium tantalate. The piezoelectric layer is on a first main surface of the silicon substrate. The acoustic wave device further includes a trap region on a side of a second main surface of the piezoelectric layer.

公开(公告)号：US20210226603A1

公开(公告)日：2021-07-22

申请号：US17223061

申请日：2021-04-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hideki IWAMOTO ,  Takashi YAMANE ,  Yasumasa TANIGUCHI ,  Katsuya DAIMON

IPC: H03H9/02 ,  H01L41/047 ,  H03H9/15 ,  H03H9/145

Abstract: An acoustic wave device includes a piezoelectric body including first and second main surfaces facing each other, an IDT electrode provided on the first main surface of the piezoelectric body and including electrode fingers, a high acoustic velocity member on the second main surface side of the piezoelectric body, in which an acoustic velocity of a propagating bulk wave is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric body, and a first dielectric film provided on an upper surface of the electrode fingers, in which a portion where a dielectric is not present is provided between the electrode fingers of the IDT electrode.

公开(公告)号：US20210111697A1

公开(公告)日：2021-04-15

申请号：US17102468

申请日：2020-11-24

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Katsuya DAIMON ,  Hiromu OKUNAGA ,  Takuya KOYANAGI

IPC: H03H9/02 ,  H03H9/05 ,  H03H9/64 ,  H03H9/25

Abstract: An acoustic wave device includes a support substrate and first and second resonant sections adjacent to each other on the support substrate. Each of the first and second resonant sections includes a piezoelectric thin film, an IDT electrode on the piezoelectric thin film, and a support layer surrounding the piezoelectric thin film in a plan view of the acoustic wave device. The support layer has a different linear expansion coefficient from the piezoelectric thin film. The piezoelectric thin film in the first resonant section and the piezoelectric thin film in the second resonant section are divided by the support layer between the resonant section and the resonant section.

公开(公告)号：US20210006223A1

公开(公告)日：2021-01-07

申请号：US17022354

申请日：2020-09-16

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Katsuya DAIMON ,  Masato ARAKI

IPC: H03H9/02

Abstract: An acoustic wave device includes a piezoelectric substrate in which a reverse-velocity surface is convex and an IDT electrode on the piezoelectric substrate. When an acoustic wave propagation direction is a first direction and a direction perpendicular or substantially perpendicular to the first direction is a second direction, the portion of the IDT electrode where first and second electrode fingers overlap in the first direction is a crossing region. The crossing region includes a center region centrally located in the second direction and a first and second edge regions located on two sides of the center region. Recesses 17 and 18 are respectively provided in portions of the piezoelectric substrate located in the first and second edge regions between the portions where the first and second electrode fingers are provided.