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    BOUNDARY ACOUSTIC WAVE DEVICE AND METHOD OF MANUFACTURING SAME
    1.
    发明申请
    BOUNDARY ACOUSTIC WAVE DEVICE AND METHOD OF MANUFACTURING SAME 有权
    边界声波装置及其制造方法

    公开(公告)号：US20130232747A1

    公开(公告)日：2013-09-12

    申请号：US13873301

    申请日：2013-04-30

    Applicant: MURATA MANUFACTURING CO., LTD.

    Inventor： Naohiro NODAKE ,  Hideaki TAKAHASHI ,  Shin SAIJO

    IPC: H01L41/29

    CPC classification number: H01L41/29 ,  H01L41/22 ,  H01L41/27 ,  H03H3/04 ,  H03H3/10 ,  H03H9/0222 ,  H03H2003/0414 ,  H03H2003/045 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

    Abstract: In the boundary acoustic wave device, an IDT electrode, a first dielectric layer, and a second dielectric layer are provided on a piezoelectric substrate. The first dielectric layer is made of a deposited film. A thickness of the IDT electrode is about 10% or more of λ. A difference between a height of the first dielectric layer, measured from an upper surface of the piezoelectric substrate, above a center of an electrode finger of the IDT electrode and a height of the first dielectric layer, measured from the upper surface of the piezoelectric substrate, above a center of a gap between adjacent electrode fingers, i.e., a magnitude of unevenness in an upper surface of the first dielectric layer, is about 5% or less of λ.

    Abstract translation: 在弹性边界波装置中，在压电基板上设置IDT电极，第一电介质层和第二电介质层。 第一电介质层由沉积膜制成。 IDT电极的厚度为λ的约10％以上。 从压电基板的上表面测量的第一介电层的高度与IDT电极的电极指的中心之间的距离和第一介电层的高度之间的差异是从压电基板的上表面 在相邻电极指之间的间隙的中心上方，即第一介电层的上表面中的不均匀度的大小为λ的约5％或更小。

    ACOUSTIC WAVE DEVICE, RADIO-FREQUENCY FRONT-END CIRCUIT, AND COMMUNICATION APPARATUS
    2.
    发明申请
    ACOUSTIC WAVE DEVICE, RADIO-FREQUENCY FRONT-END CIRCUIT, AND COMMUNICATION APPARATUS 审中-公开

    公开(公告)号：US20200186128A1

    公开(公告)日：2020-06-11

    申请号：US16707169

    申请日：2019-12-09

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Koji YAMAMOTO ,  Tsutomu TAKAI ,  Hideaki TAKAHASHI

    IPC: H03H9/70 ,  H03H9/02

    Abstract: An acoustic wave device includes a high-acoustic-velocity film, a low-acoustic-velocity film provided on the high-acoustic-velocity film, a piezoelectric layer provided on the low-acoustic-velocity film, and an IDT electrode provided on the piezoelectric layer. An acoustic velocity of bulk waves propagating through the high-acoustic-velocity film is higher than an acoustic velocity of acoustic waves propagating through the piezoelectric layer. An acoustic velocity of bulk waves propagating through the low-acoustic-velocity film is lower than an acoustic velocity of bulk waves propagating through the piezoelectric layer. The low-acoustic-velocity film includes a material including hydrogen atoms.

    ELASTIC WAVE DEVICE, HIGH-FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION APPARATUS
    4.
    发明申请
    ELASTIC WAVE DEVICE, HIGH-FREQUENCY FRONT END CIRCUIT, AND COMMUNICATION APPARATUS 审中-公开

    公开(公告)号：US20190288668A1

    公开(公告)日：2019-09-19

    申请号：US16429098

    申请日：2019-06-03

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Hideaki TAKAHASHI ,  Hirokazu SAKAGUCHI ,  Yasuharu NAKAI

    IPC: H03H9/145 ,  H03H9/25 ,  H03H9/64 ,  H03H9/72 ,  H03H9/02

    Abstract: An elastic wave device includes a piezoelectric substrate, an IDT electrode on the piezoelectric substrate, and a silicon oxide film arranged on the piezoelectric substrate to cover the IDT electrode. The IDT electrode includes first and second electrode layers laminated on each other, the first electrode layer is made of metal or an alloy with a density higher than a density of metal of the second electrode layer and a density of silicon oxide of the silicon oxide film, the piezoelectric substrate is made of LiNbO3 and θ is in a range of equal to or greater than about 8° and equal to or less than about 32° with Euler Angles (0°±5°, θ, 0°±10°) of the piezoelectric substrate, and the silicon oxide film contains hydrogen atoms, hydroxyl groups, or silanol groups.

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