公开(公告)号：US20070187758A1

公开(公告)日：2007-08-16

申请号：US11635179

申请日：2006-12-07

申请人： Myung Jun ,  Moon Jang ,  Yark Kim ,  Chel Choi ,  Byoung Park ,  Seong Lee

发明人： Myung Jun ,  Moon Jang ,  Yark Kim ,  Chel Choi ,  Byoung Park ,  Seong Lee

IPC分类号： H01L27/12

CPC分类号： H01L29/458 ,  H01L29/045 ,  H01L29/66772 ,  H01L29/7839 ,  H01L29/78696

摘要： Provided is a high-performance n-type Schottky barrier tunneling transistor with low Schottky barrier for electrons due to a Schottky junction formed on a Si (111) surface created through anisotropic etching. The Schottky barrier tunneling transistor includes: a silicon on insulator (SOI) substrate; a source and a drain formed on the SOI substrate; a channel formed between the source and the drain; a gate insulating layer and a gate electrode sequentially formed on the channel; and a sidewall insulating layer formed on both sidewalls of the gate insulating layer and the gate electrode, wherein an interface between the source/drain and the channel is on a Si (111) in the channel, and the source and drain consists of metal silicide through silicidation with a predetermined metal and forms a Schottky junction with the silicon channel.

摘要翻译： 提供了由于通过各向异性蚀刻形成的Si（111）表面上形成的肖特基结，具有用于电子的肖特基势垒低的高性能n型肖特基势垒隧道晶体管。 肖特基势垒隧道晶体管包括：绝缘体上硅（SOI）衬底; 在SOI衬底上形成的源极和漏极; 在源极和漏极之间形成的沟道; 顺序地形成在沟道上的栅极绝缘层和栅电极; 以及形成在栅极绝缘层和栅极电极的两个侧壁上的侧壁绝缘层，其中源极/漏极和沟道之间的界面在通道中的Si（111）上，并且源极和漏极由金属硅化物 通过与预定金属的硅化，并与硅通道形成肖特基结。

公开(公告)号：US20070034951A1

公开(公告)日：2007-02-15

申请号：US11485837

申请日：2006-07-13

申请人： Yark Kim ,  Seong Lee ,  Moon Jang ,  Chel Choi ,  Myung Jun ,  Byoung Park

发明人： Yark Kim ,  Seong Lee ,  Moon Jang ,  Chel Choi ,  Myung Jun ,  Byoung Park

IPC分类号： H01L27/12 ,  H01L27/01 ,  H01L31/0392

CPC分类号： H01L29/47 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66545 ,  H01L29/66772 ,  H01L29/7839

摘要： Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.

摘要翻译： 提供了一种肖特基势垒隧道晶体管及其制造方法，该晶体管能够使用在半导体 - 金属结上自然形成的肖特基隧道势垒作为隧道来最小化对肖特基势垒隧道晶体管的栅极侧壁的损坏所造成的漏电流 屏障。 该方法包括以下步骤：在绝缘基板上形成半导体沟道层; 在半导体沟道层上形成虚拟栅极; 在绝缘基板上的虚拟栅极的两侧形成源极和漏极; 去除虚拟门; 在去除所述伪栅极的侧壁上形成绝缘层; 并且在从其中去除虚拟栅极的空间中形成实际栅极。 在使用伪栅极制造肖特基势垒隧道晶体管时，可以形成高k电介质栅极绝缘层和金属栅极，并且可以获得具有非常强反应性的金属层的硅化物的稳定特性。

公开(公告)号：US20050099031A1

公开(公告)日：2005-05-12

申请号：US10477827

申请日：2002-08-13

申请人： Byoung Park

发明人： Byoung Park

IPC分类号： A47G21/10 ,  A47G21/06 ,  B25B7/00 ,  B25B9/00

CPC分类号： A47G21/103

摘要： A pair of training chopsticks for developing intellectual faculties is described. The training chopsticks comprise a first stick, a second stick and a coupling means. The first stick has a thumb-inserting hole for inserting the thumb and a first pad for picking up solids. The thumb-inserting hole is formed on the upper side of the first stick and the first pad is formed on the lower end of the first stick. The second stick has a holding unit for inserting the forefinger and the second finger, an adjusting means for adjusting the fixing position of the holding unit and a second pad for picking up solids. The holding unit has a forefinger-inserting hole for inserting the forefinger and a second finger-inserting hole for inserting the second finger. The coupling means formed on the upper sides of the first and second stick couples the first and second stick at an interval.

摘要翻译： 描述了一对发展智力的培训筷子。 训练筷子包括第一棒，第二棒和联接装置。 第一个棒具有用于插入拇指的拇指插入孔和用于拾起固体的第一垫。 拇指插入孔形成在第一棒的上侧，第一垫形成在第一棒的下端。 第二棒具有用于插入食指和第二指的保持单元，用于调节保持单元的固定位置的调节装置和用于拾取固体的第二垫。 保持单元具有用于插入食指的食指插入孔和用于插入第二手指的第二手指插入孔。 形成在第一和第二杆的上侧上的联接装置以一定间隔连接第一和第二棒。

公开(公告)号：US20050189482A1

公开(公告)日：2005-09-01

申请号：US10814148

申请日：2004-04-01

申请人： Geun-Young Yeom ,  Do-Haing Lee ,  Byoung Park

发明人： Geun-Young Yeom ,  Do-Haing Lee ,  Byoung Park

IPC分类号： H01L21/3065 ,  H05H3/02

CPC分类号： H05H3/02

摘要： Disclosed is a 3-grid neutral beam source used for etching a semiconductor device. The 3-grid neutral beam source includes a plasma generating chamber, a grid assembly including first to third grids, which are sequentially overlapped with each other by interposing an insulation material therebetween for obtaining a great amount of ion flux at a low ion energy, and a reflective member for converting an ion beam into a neutral beam by reflecting the ion beam. The semiconductor device is prevented from being damaged due to reduced kinetic energy of ions, and an etch rate of the semiconductor device is improved.

摘要翻译： 公开了一种用于蚀刻半导体器件的3栅极中性束源。 三栅中性束源包括等离子体发生室，包括第一至第三栅极的栅格组件，其通过在其间插入绝缘材料而相互重叠，以在低离子能量下获得大量的离子通量，以及 用于通过反射离子束将离子束转换成中立光束的反射构件。 防止半导体器件由于离子的动能降低而被损坏，并且提高了半导体器件的蚀刻速率。

公开(公告)号：US20050264788A1

公开(公告)日：2005-12-01

申请号：US11139618

申请日：2005-05-31

申请人： Ki Lee ,  Seh Ahn ,  Sung Pieh ,  Byoung Park ,  Gyu Kim

发明人： Ki Lee ,  Seh Ahn ,  Sung Pieh ,  Byoung Park ,  Gyu Kim

IPC分类号： G02F1/13 ,  G03F1/84 ,  G03F7/20 ,  H01L21/027 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  G03B27/54

CPC分类号： G03F7/70291 ,  G03F7/7065

摘要： A lithography apparatus is provided. The apparatus includes: a stage, a first light source unit, an optical system, an image obtaining means, an image edit means, an LC panel, and a second light source unit. The LC panel is coupled with the optical system and receives a signal of the image edited by the image edit means and displays the received image to perform a photo mask function. The second light source unit provides light used in performing an exposure on the test material using the imaged displayed on the LC panel for a photo mask.

摘要翻译： 提供了一种光刻设备。 该装置包括：舞台，第一光源单元，光学系统，图像获取装置，图像编辑装置，LC面板和第二光源单元。 LC面板与光学系统耦合并接收由图像编辑装置编辑的图像的信号，并显示接收的图像以执行光掩模功能。 第二光源单元使用在用于光掩模的LC面板上显示的成像来提供用于对测试材料进行曝光的光。