公开(公告)号：US20060246730A1

公开(公告)日：2006-11-02

申请号：US11321591

申请日：2005-12-30

申请人： Myung-Ok Kim ,  Tae-Woo Jung ,  Sung-Kwon Lee ,  Sea-Ug Jang

发明人： Myung-Ok Kim ,  Tae-Woo Jung ,  Sung-Kwon Lee ,  Sea-Ug Jang

IPC分类号： H01L21/311

CPC分类号： H01L21/31116 ,  H01L29/66621

摘要： A method for fabricating a transistor of a semiconductor device is provided. The method includes: forming device isolation layers in a substrate including a bottom structure, thereby defining an active region; etching the active region to a predetermined depth to form a plurality of recess structures each of which has a flat bottom portion with a critical dimension (CD) larger than that of a top portion; and sequentially forming a gate oxide layer and a metal layer on the recess structures; and patterning the gate oxide layer and the metal layer to form a plurality of gate structures.

摘要翻译： 提供一种制造半导体器件的晶体管的方法。 该方法包括：在包括底部结构的衬底中形成器件隔离层，从而限定有源区; 将活性区域蚀刻到预定深度以形成多个凹部结构，每个凹部结构具有平坦的底部，其临界尺寸（CD）大于顶部部分的临界尺寸; 并且在所述凹部结构上依次形成栅极氧化物层和金属层; 以及图案化栅极氧化物层和金属层以形成多个栅极结构。

公开(公告)号：US07314792B2

公开(公告)日：2008-01-01

申请号：US11321591

申请日：2005-12-30

申请人： Myung-Ok Kim ,  Tae-Woo Jung ,  Sung-Kwon Lee ,  Sea-Ug Jang

发明人： Myung-Ok Kim ,  Tae-Woo Jung ,  Sung-Kwon Lee ,  Sea-Ug Jang

IPC分类号： H01L21/8238 ,  H01L21/336 ,  H01L21/331 ,  H01L21/76

CPC分类号： H01L21/31116 ,  H01L29/66621

摘要： A method for fabricating a transistor of a semiconductor device is provided. The method includes: forming device isolation layers in a substrate including a bottom structure, thereby defining an active region; etching the active region to a predetermined depth to form a plurality of recess structures each of which has a flat bottom portion with a critical dimension (CD) larger than that of a top portion; and sequentially forming a gate oxide layer and a metal layer on the recess structures; and patterning the gate oxide layer and the metal layer to form a plurality of gate structures.

摘要翻译： 提供一种制造半导体器件的晶体管的方法。 该方法包括：在包括底部结构的衬底中形成器件隔离层，从而限定有源区; 将活性区域蚀刻到预定深度以形成多个凹部结构，每个凹部结构具有平坦的底部，其临界尺寸（CD）大于顶部部分的临界尺寸; 并且在所述凹部结构上依次形成栅极氧化物层和金属层; 以及图案化栅极氧化物层和金属层以形成多个栅极结构。