公开(公告)号：US20220149240A1

公开(公告)日：2022-05-12

申请号：US17583867

申请日：2022-01-25

Applicant: NANOSYS, INC.

Inventor： Max Batres ,  Fariba Danesh ,  Michael J. Cich ,  Zhen Chen

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/46 ,  H01L25/075

Abstract: A light emitting device (LED) includes an n-doped semiconductor material layer, an active region including an optically active compound semiconductor layer stack configured to emit light located on the n-doped semiconductor material layer, a p-doped semiconductor material layer located on the active region, an anode contact contacting the p-doped semiconductor material layer, a reflector overlying and electrically connected to the anode contact, and a device-side bonding pad layer located on the reflector. The p-doped semiconductor material layer includes an electrically active region that is at least partially covered by the anode contact and an inactive region that an electrical conductivity less than 30% of the electrically active region.

公开(公告)号：US11908974B2

公开(公告)日：2024-02-20

申请号：US17583867

申请日：2022-01-25

Applicant: NANOSYS, INC.

Inventor： Max Batres ,  Fariba Danesh ,  Michael J. Cich ,  Zhen Chen

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/46 ,  H01L25/075

CPC classification number: H01L33/325 ,  H01L25/0753 ,  H01L33/0075 ,  H01L33/46

Abstract: A light emitting device (LED) includes an n-doped semiconductor material layer, an active region including an optically active compound semiconductor layer stack configured to emit light located on the n-doped semiconductor material layer, a p-doped semiconductor material layer located on the active region, an anode contact contacting the p-doped semiconductor material layer, a reflector overlying and electrically connected to the anode contact, and a device-side bonding pad layer located on the reflector. The p-doped semiconductor material layer includes an electrically active region that is at least partially covered by the anode contact and an inactive region that an electrical conductivity less than 30% of the electrically active region.