公开(公告)号：US20240363330A1

公开(公告)日：2024-10-31

申请号：US18308664

申请日：2023-04-27

申请人： NANYA TECHNOLOGY CORPORATION

发明人： Szu Yu HOU

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L21/02068 ,  H01L21/31138 ,  H01L21/76814 ,  H01L23/53257

摘要： A semiconductor device includes a substrate and a bit line structure disposed on the substrate. The bit line structure includes a first conductive structure and a second conductive structure, in which a material of the first conductive structure includes polysilicon. The second conductive structure is disposed in direct contact on the first conductive structure, in which a reactivity of a material of the second conductive structure to oxygen is larger than a reactivity of tungsten to oxygen.