公开(公告)号：US10217500B1

公开(公告)日：2019-02-26

申请号：US15722118

申请日：2017-10-02

Applicant: NATIONAL APPLIED RESEARCH LABORATORIES

Inventor： Yann-Wen Lan ,  Qiming Shao ,  Guoqiang Yu ,  Kang-Lung Wang ,  Wen-Kuan Yeh

IPC: G11C11/00 ,  G11C11/16 ,  G11C11/14 ,  G11C11/56 ,  C23C16/06 ,  C23C14/34

Abstract: The present invention relates to an inductive spin-orbit torque device and the method for fabricating the same. The method comprises steps of depositing a two-dimensional thin film using chemical vapor deposition (CVD) and sputtering a ferromagnetic material on the thin film. The crystal structure of the two-dimensional thin film includes at least one lattice plane arranged asymmetrically. The thickness of the two-dimensional thin film includes at least one unit-cell layer. The sum of the at least one unit-cell layer is an odd number. By using the vertical magnetic torque generated by the two-dimensional thin film and the miniaturization in thickness, the device size and the fabrication costs may be reduced.