公开(公告)号：US20190145920A1

公开(公告)日：2019-05-16

申请号：US16225087

申请日：2018-12-19

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jin KAWAKITA ,  Tadashi SHINOHARA ,  Toyohiro CHIKYO ,  Toshihide NABATAME ,  Akihiko OHI ,  Tomoko OHKI

IPC: G01N27/04 ,  G01N27/12 ,  G01N27/22 ,  G01N17/04

Abstract: The present invention improves the sensitivity and the responsiveness of a dryness/wetness responsive sensor utilizing a galvanic current, allowing for downsizing of the dryness/wetness responsive sensor. Instead of the conventional structure in which an anode electrode and a cathode electrode are stacked with an intervening insulator, the present invention employs a structure in which both electrodes run in juxtaposition with each other on an insulating substrate in the form of, for example, a comb-shaped electrode as shown in the drawing. By utilizing a semiconductor manufacturing process or any other micro/nano-fabrication technology, an inter-electrode distance can be extremely shortened as compared with the conventional sensors, allowing enhancing the sensitivity per unit footprint of the electrodes. Accordingly, a decrease in the size of the dryness/wetness responsive sensor can be easily achieved.

公开(公告)号：US20170167995A1

公开(公告)日：2017-06-15

申请号：US15327103

申请日：2015-07-21

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jin KAWAKITA ,  Tadashi SHINOHARA ,  Toyohiro CHIKYO ,  Toshihide NABATAME ,  Akihiko OHI ,  Tomoko OHKI

IPC: G01N27/04

CPC classification number: G01N27/048 ,  G01N17/00 ,  G01N17/04 ,  G01N27/045 ,  G01N27/121 ,  G01N27/223

Abstract: The present invention improves the sensitivity and the responsiveness of a dryness/wetness responsive sensor utilizing a galvanic current, allowing for downsizing of the dryness/wetness responsive sensor. Instead of the conventional structure in which an anode electrode and a cathode electrode are stacked with an intervening insulator, the present invention employs a structure in which both electrodes run in juxtaposition with each other on an insulating substrate in the form of, for example, a comb-shaped electrode as shown in the drawing. By utilizing a semiconductor manufacturing process or any other micro/nano-fabrication technology, an inter-electrode distance can be extremely shortened as compared with the conventional sensors, allowing enhancing the sensitivity per unit footprint of the electrodes. Accordingly, a decrease in the size of the dryness/wetness responsive sensor can be easily achieved.