公开(公告)号：US20160056409A1

公开(公告)日：2016-02-25

申请号：US14780765

申请日：2014-03-28

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Toshihide NABATAME ,  Kazuhito TSUKAGOSHI ,  Shinya AIKAWA

IPC: H01L51/52 ,  C23C14/18 ,  C23C14/08 ,  H01L51/00 ,  C23C14/34

CPC classification number: H01L51/5234 ,  C23C14/086 ,  C23C14/12 ,  C23C14/185 ,  C23C14/24 ,  C23C14/3464 ,  H01L51/0021 ,  H01L51/5206 ,  H01L51/5221 ,  H01L2251/305 ,  H01L2251/308

Abstract: Provided is an organic EL element which has excellent luminous efficiency by improving the cathode. An organic EL element which is configured of a cathode, an anode and one or more organic compound layers provided between the electrodes, and wherein the cathode is formed of a transparent conductive film that is formed on a glass substrate and is configured from an indium oxide compound and an element having a high work function, so that the cathode has a high work function matched to the HOMO of an organic hole transport layer among the organic compound layers. Consequently, holes can be easily injected from the cathode to the organic hole transport layer, and the present invention is therefore suitable for manufacturing an organic EL element having excellent luminous efficiency.

Abstract translation: 提供通过改善阴极而具有优异的发光效率的有机EL元件。 一种由阴极，阳极和设置在电极之间的一个或多个有机化合物层构成的有机EL元件，其中阴极由形成在玻璃基板上的透明导电膜形成，并且由氧化铟 化合物和具有高功函数的元素，使得阴极具有与有机化合物层中的有机空穴传输层的HOMO匹配的高功函数。 因此，可以容易地将空穴从阴极注入到有机空穴传输层，因此本发明适用于制造发光效率优异的有机EL元件。

公开(公告)号：US20170346006A1

公开(公告)日：2017-11-30

申请号：US15536150

申请日：2016-01-13

Applicant: National Institute for Materials Science

Inventor： Toshihide NABATAME ,  Tadaaki NAGAO

IPC: H01L45/00 ,  H01L27/24 ,  C23C16/40

CPC classification number: H01L45/146 ,  C23C16/40 ,  H01L27/105 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/00 ,  H01L45/1233 ,  H01L45/1616 ,  H01L49/00

Abstract: The forming voltage of a resistance change element used in a non-volatile memory and the like is decreased, and repetition characteristics are improved. In an element structure in which a metal oxide film 12 is sandwiched between a lower electrode 11 and an upper electrode 14, an island/particle-like region of amorphous aluminum oxide or aluminum oxycarbide 13 is formed on the metal oxide film 12. Because an oxide deficiency, serving as the nucleus of a filament for implementing an on/off operation of the resistance change element, is formed from the beginning under the island- or particle-like aluminum oxide or the like, the conventional creation of an oxide deficiency by high-voltage application in the initial period of forming can be eliminated. Such a region can be fabricated using a small number of cycles of an ALD process.

公开(公告)号：US20170167995A1

公开(公告)日：2017-06-15

申请号：US15327103

申请日：2015-07-21

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jin KAWAKITA ,  Tadashi SHINOHARA ,  Toyohiro CHIKYO ,  Toshihide NABATAME ,  Akihiko OHI ,  Tomoko OHKI

IPC: G01N27/04

CPC classification number: G01N27/048 ,  G01N17/00 ,  G01N17/04 ,  G01N27/045 ,  G01N27/121 ,  G01N27/223

Abstract: The present invention improves the sensitivity and the responsiveness of a dryness/wetness responsive sensor utilizing a galvanic current, allowing for downsizing of the dryness/wetness responsive sensor. Instead of the conventional structure in which an anode electrode and a cathode electrode are stacked with an intervening insulator, the present invention employs a structure in which both electrodes run in juxtaposition with each other on an insulating substrate in the form of, for example, a comb-shaped electrode as shown in the drawing. By utilizing a semiconductor manufacturing process or any other micro/nano-fabrication technology, an inter-electrode distance can be extremely shortened as compared with the conventional sensors, allowing enhancing the sensitivity per unit footprint of the electrodes. Accordingly, a decrease in the size of the dryness/wetness responsive sensor can be easily achieved.

公开(公告)号：US20200249185A1

公开(公告)日：2020-08-06

申请号：US16640421

申请日：2018-08-23

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jin KAWAKITA ,  Akihiko OHI ,  Tomoko OHKI ,  Naoki IKEDA ,  Toshihide NABATAME ,  Toyohiro CHIKYO

IPC: G01N27/04

Abstract: The present invention is to provide a small-sized dryness/wetness responsive sensor that detects a galvanic current with a high sensitivity as a principle of operation. According to one embodiment of the present invention, a dryness/wetness responsive sensor comprises a thin wire made of a first metal and a thin wire made of a second metal, the second metal is different from the first metal, the thin wire of the first metal and the thin wire of the second metal are disposed in juxtaposition with each other on an insulating substrate, and a surface state of a part between the thin wire of the first metal and the thin wire of the second metal is hydrophilic or hydrophobic.

公开(公告)号：US20190145920A1

公开(公告)日：2019-05-16

申请号：US16225087

申请日：2018-12-19

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jin KAWAKITA ,  Tadashi SHINOHARA ,  Toyohiro CHIKYO ,  Toshihide NABATAME ,  Akihiko OHI ,  Tomoko OHKI

IPC: G01N27/04 ,  G01N27/12 ,  G01N27/22 ,  G01N17/04

Abstract: The present invention improves the sensitivity and the responsiveness of a dryness/wetness responsive sensor utilizing a galvanic current, allowing for downsizing of the dryness/wetness responsive sensor. Instead of the conventional structure in which an anode electrode and a cathode electrode are stacked with an intervening insulator, the present invention employs a structure in which both electrodes run in juxtaposition with each other on an insulating substrate in the form of, for example, a comb-shaped electrode as shown in the drawing. By utilizing a semiconductor manufacturing process or any other micro/nano-fabrication technology, an inter-electrode distance can be extremely shortened as compared with the conventional sensors, allowing enhancing the sensitivity per unit footprint of the electrodes. Accordingly, a decrease in the size of the dryness/wetness responsive sensor can be easily achieved.

公开(公告)号：US20160118501A1

公开(公告)日：2016-04-28

申请号：US14889919

申请日：2014-05-02

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Toshihide NABATAME ,  Kazuhito TSUKAGOSHI ,  Shinya AIKAWA ,  Toyohiro CHIKYO

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/40 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/40 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78693

Abstract: The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode (108), a drain electrode (109), a semiconductor layer (105), a gate electrode (103), and an insulating layer (104); wherein the semiconductor layer (105) contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer (104) is provided with an SiO2 layer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiO2 layer and the high-permittivity layers are used to control the threshold voltage.

Abstract translation: 本发明提供一种薄膜晶体管及其制造方法，其中诸如漏极电流和阈值电压的晶体管特性得到改善。 本发明提供一种具有源电极（108），漏电极（109），半导体层（105），栅电极（103）和绝缘层（104）的薄膜晶体管。 其中，所述半导体层（105）含有复合金属氧化物，所述复合金属氧化物通过向第一金属氧化物中添加比所述第一金属氧化物的氧解离能大至少200kJ / mol的氧解离能的氧化物而得到， 的氧空位被控制; 并且绝缘层（104）设置有SiO 2层，高介电常数第一层和高电容率第二层，由此在SiO 2层和高介电常数层之间的边界处产生的偶极子用于控制 阈值电压。

公开(公告)号：US20140061872A1

公开(公告)日：2014-03-06

申请号：US14046339

申请日：2013-10-04

Applicant: National Institute for Materials Science

Inventor： Naoto UMEZAWA ,  Toyohiro CHIKYO ,  Toshihide NABATAME

IPC: H01L29/51

CPC classification number: H01L29/51 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7833

Abstract: To provide a method for reducing a thickness of an interfacial layer, which contains: (a) forming a film of an oxide of a first metal on a semiconductor layer via an oxide film of a semiconductor serving as an interfacial layer; and (b) forming a film of an oxide of a second metal on the film of the oxide of the first metal, where the second metal has higher valency than that of the first metal.

Abstract translation: 提供一种减小界面层的厚度的方法，该方法包括：（a）通过半导体用作界面层的氧化膜在半导体层上形成第一金属的氧化物的膜; 和（b）在所述第一金属的氧化物的膜上形成第二金属的氧化物的膜，其中所述第二金属具有比所述第一金属更高的化合价。