公开(公告)号：US09751754B2

公开(公告)日：2017-09-05

申请号：US15112222

申请日：2015-01-27

申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

发明人： Yuuichi Kurashima ,  Hideki Takagi ,  Atsuhiko Maeda

IPC分类号： B81C1/00

CPC分类号： B81C1/00269 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/035

摘要： This invention includes a sacrificial thin film formation step for chemical-mechanical polishing a temporary substrate made of a readily polishable material and sputtering a metal thin film along the smoothly polished surface, and a first bonding step for forming a sealing frame obtained by bringing at least a noble metal on the metal thin film and bonding a substrate on the sealing frame. This invention also includes a temporary substrate removal step for then removing the metal thin film along with the temporary substrate and exposing a new surface at the tip of the sealing frame; and a second bonding step for sputtering a noble metal thin film around a precision machine element on the machine substrate, bringing the new surface of the sealing frame into contact onto the noble metal thin film and bonding the new surface of the sealing frame onto the noble metal thin film at room temperature.