公开(公告)号：US09751754B2

公开(公告)日：2017-09-05

申请号：US15112222

申请日：2015-01-27

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Yuuichi Kurashima ,  Hideki Takagi ,  Atsuhiko Maeda

IPC: B81C1/00

CPC classification number: B81C1/00269 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/035

Abstract: This invention includes a sacrificial thin film formation step for chemical-mechanical polishing a temporary substrate made of a readily polishable material and sputtering a metal thin film along the smoothly polished surface, and a first bonding step for forming a sealing frame obtained by bringing at least a noble metal on the metal thin film and bonding a substrate on the sealing frame. This invention also includes a temporary substrate removal step for then removing the metal thin film along with the temporary substrate and exposing a new surface at the tip of the sealing frame; and a second bonding step for sputtering a noble metal thin film around a precision machine element on the machine substrate, bringing the new surface of the sealing frame into contact onto the noble metal thin film and bonding the new surface of the sealing frame onto the noble metal thin film at room temperature.

公开(公告)号：US12027440B2

公开(公告)日：2024-07-02

申请号：US17609919

申请日：2020-04-17

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Takashi Matsumae ,  Hitoshi Umezawa ,  Yuuichi Kurashima ,  Hideki Takagi

IPC: H01L23/373 ,  C30B29/04 ,  C30B29/06 ,  C30B29/16 ,  C30B33/06

CPC classification number: H01L23/3732 ,  C30B29/04 ,  C30B29/06 ,  C30B29/16 ,  C30B33/06

Abstract: A composite that includes a base including an oxide layer MOx of an element M on a surface thereof and a diamond crystal base bonded to the surface of the base. The M is one or more selected from among metal elements capable of forming an oxide (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, Te, and Bi, and the diamond crystal base is bonded to the surface of the base by M-O—C bonding of at least some C atoms of the (111) surface of the diamond crystal base.

公开(公告)号：US09761479B2

公开(公告)日：2017-09-12

申请号：US14902764

申请日：2014-07-03

Applicant: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI ,  SICOXS CORPORATION ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Ko Imaoka ,  Motoki Kobayashi ,  Hidetsugu Uchida ,  Kuniaki Yagi ,  Takamitsu Kawahara ,  Naoki Hatta ,  Akiyuki Minami ,  Toyokazu Sakata ,  Tomoatsu Makino ,  Hideki Takagi ,  Yuuichi Kurashima

IPC: H01L21/30 ,  H01L21/46 ,  H01L21/76 ,  H01L21/762 ,  H01L21/20 ,  H01L29/16

CPC classification number: H01L21/76251 ,  H01L21/02002 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/76254 ,  H01L29/1608

Abstract: A technique disclosed herein relates to a manufacturing method for a semiconductor substrate having the bonded interface with high bonding strength without forming an oxide layer at the bonded interface also for the substrate having surface that is hardly planarized. The manufacturing method for the semiconductor substrate may include an amorphous layer formation process in which a first amorphous layer is formed by modifying a surface of a support substrate and a second amorphous layer is formed by modifying a surface of a single-crystalline layer of a semiconductor. The manufacturing method may include a contact process in which the first amorphous layer and the second amorphous layer are contacted with each other. The manufacturing method may include a heat treatment process in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other.

公开(公告)号：US09580306B2

公开(公告)日：2017-02-28

申请号：US14425966

申请日：2013-09-25

Applicant: MITSUBISHI HEAVY INDUSTRIES MACHINE TOOL CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Masato Kinouchi ,  Takayuki Goto ,  Takeshi Tsuno ,  Jun Utsumi ,  Kensuke Ide ,  Takenori Suzuki ,  Keiichiro Tsutsumi ,  Hideki Takagi ,  Yuuichi Kurashima

IPC: B81C3/00 ,  H01L21/67 ,  B23K20/00 ,  B81C99/00 ,  H01L21/20

CPC classification number: B81C3/001 ,  B23K20/00 ,  B23K20/008 ,  B81C99/0025 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/67207

Abstract: A room temperature bonding apparatus includes a first beam source, a second beam source, and a press bonding mechanism. The first beam source emits a first activation beam that irradiates a first surface of a first substrate. Independently from the first beam source, the second beam source emits a second activation beam that irradiates a second surface of a second substrate. The press bonding mechanism bonds between the first substrate and the second substrate by contacting between the first surface and the second surface after the first surface is irradiated with the first activation beam and the second surface is irradiated with the second activation beam. Thus, a plurality of the substrates made of different materials is appropriately bonded.

Abstract translation: 室温接合装置包括第一光束源，第二光束源和压接机构。 第一光束源发射照射第一衬底的第一表面的第一激活光束。 独立于第一光束源，第二光束源发射照射第二衬底的第二表面的第二激活光束。 压接机构通过在第一表面被第一激活光束照射并且第二表面被第二激活光束照射之后通过第一表面和第二表面之间的接触而在第一基板和第二基板之间接合。 因此，将由不同材料制成的多个基板适当地接合。

公开(公告)号：US20150251904A1

公开(公告)日：2015-09-10

申请号：US14425966

申请日：2013-09-25

Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Masato Kinouchi ,  Takayuki Goto ,  Takeshi Tsuno ,  Jun Utsumi ,  Kensuke Ide ,  Takenori Suzuki ,  Keiichiro Tsutsumi ,  Hideki Takagi ,  Yuuichi Kurashima

IPC: B81C3/00 ,  B81C99/00

CPC classification number: B81C3/001 ,  B23K20/00 ,  B23K20/008 ,  B81C99/0025 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/67207

Abstract: A room temperature bonding apparatus includes a first beam source, a second beam source, and a press bonding mechanism. The first beam source emits a first activation beam that irradiates a first surface of a first substrate. Independently from the first beam source, the second beam source emits a second activation beam that irradiates a second surface of a second substrate. The press bonding mechanism bonds between the first substrate and the second substrate by contacting between the first surface and the second surface after the first surface is irradiated with the first activation beam and the second surface is irradiated with the second activation beam. Thus, a plurality of the substrates made of different materials is appropriately bonded.

Abstract translation: 室温接合装置包括第一光束源，第二光束源和压接机构。 第一光束源发射照射第一衬底的第一表面的第一激活光束。 独立于第一光束源，第二光束源发射照射第二衬底的第二表面的第二激活光束。 压接机构通过在第一表面被第一激活光束照射并且第二表面被第二激活光束照射之后通过第一表面和第二表面之间的接触而在第一基板和第二基板之间接合。 因此，将由不同材料制成的多个基板适当地接合。