Abstract:
This invention includes a sacrificial thin film formation step for chemical-mechanical polishing a temporary substrate made of a readily polishable material and sputtering a metal thin film along the smoothly polished surface, and a first bonding step for forming a sealing frame obtained by bringing at least a noble metal on the metal thin film and bonding a substrate on the sealing frame. This invention also includes a temporary substrate removal step for then removing the metal thin film along with the temporary substrate and exposing a new surface at the tip of the sealing frame; and a second bonding step for sputtering a noble metal thin film around a precision machine element on the machine substrate, bringing the new surface of the sealing frame into contact onto the noble metal thin film and bonding the new surface of the sealing frame onto the noble metal thin film at room temperature.
Abstract:
A composite that includes a base including an oxide layer MOx of an element M on a surface thereof and a diamond crystal base bonded to the surface of the base. The M is one or more selected from among metal elements capable of forming an oxide (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, Te, and Bi, and the diamond crystal base is bonded to the surface of the base by M-O—C bonding of at least some C atoms of the (111) surface of the diamond crystal base.
Abstract:
An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiO2 substrates) are bonded at room-temperature to have practical bonding strength.
Abstract:
Provided is a method for forming a pattern of polyimide that is simpler and is more excellent in the pattern shape and in the dimensional accuracy in comparison with the conventional techniques of patterning polyimide, such as photolithography and laser processing. In a method for forming a micropattern of polyimide, which includes using as polyimide a solvent-soluble polyimide resin composition that is photosensitive and is moldable at a temperature of less than or equal to a glass-transition temperature; patterning the composition using thermal imprinting; and thermally curing the composition, ultraviolet irradiation is performed after the composition is released from a mold after a molding step.
Abstract:
A technique disclosed herein relates to a manufacturing method for a semiconductor substrate having the bonded interface with high bonding strength without forming an oxide layer at the bonded interface also for the substrate having surface that is hardly planarized. The manufacturing method for the semiconductor substrate may include an amorphous layer formation process in which a first amorphous layer is formed by modifying a surface of a support substrate and a second amorphous layer is formed by modifying a surface of a single-crystalline layer of a semiconductor. The manufacturing method may include a contact process in which the first amorphous layer and the second amorphous layer are contacted with each other. The manufacturing method may include a heat treatment process in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other.
Abstract:
A semiconductor light emitting element with a design wavelength of λ, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength λ satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength λ becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.5a and the period a and the radius R that are determined for each order m of the Bragg conditions.
Abstract:
A room temperature bonding apparatus includes a first beam source, a second beam source, and a press bonding mechanism. The first beam source emits a first activation beam that irradiates a first surface of a first substrate. Independently from the first beam source, the second beam source emits a second activation beam that irradiates a second surface of a second substrate. The press bonding mechanism bonds between the first substrate and the second substrate by contacting between the first surface and the second surface after the first surface is irradiated with the first activation beam and the second surface is irradiated with the second activation beam. Thus, a plurality of the substrates made of different materials is appropriately bonded.
Abstract:
Provided is a method for forming a pattern of polyimide that is simpler and is more excellent in the pattern shape and in the dimensional accuracy in comparison with the conventional techniques of patterning polyimide, such as photolithography and laser processing. In a method for forming a micropattern of polyimide, which includes using as polyimide a solvent-soluble polyimide resin composition that is photosensitive and is moldable at a temperature of less than or equal to a glass-transition temperature; patterning the composition using thermal imprinting; and thermally curing the composition, ultraviolet irradiation is performed after the composition is released from a mold after a molding step.
Abstract:
A room temperature bonding apparatus includes a first beam source, a second beam source, and a press bonding mechanism. The first beam source emits a first activation beam that irradiates a first surface of a first substrate. Independently from the first beam source, the second beam source emits a second activation beam that irradiates a second surface of a second substrate. The press bonding mechanism bonds between the first substrate and the second substrate by contacting between the first surface and the second surface after the first surface is irradiated with the first activation beam and the second surface is irradiated with the second activation beam. Thus, a plurality of the substrates made of different materials is appropriately bonded.