公开(公告)号：US20190273136A1

公开(公告)日：2019-09-05

申请号：US16280083

申请日：2019-02-20

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Keiko MASUMOTO ,  Satoshi SEGAWA ,  Kazutoshi KOJIMA ,  Tomohisa KATO ,  Toshiyuki OHNO

IPC: H01L29/16 ,  H01L21/02

Abstract: A silicon carbide epitaxial wafer (10) of the present invention is a silicon carbide epitaxial wafer including: a silicon carbide substrate (1) and a silicon carbide layer (2) provided on a first principal plane (1A) of the silicon carbide substrate (1) and having a film thickness of 100 μm or more, wherein a warpage amount of the silicon carbide epitaxial wafer is −20 μm or more and 20 μm or less.