公开(公告)号：US20190333998A1

公开(公告)日：2019-10-31

申请号：US16224882

申请日：2018-12-19

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Keiko MASUMOTO ,  Takashi MITANI ,  Kazuma ETO ,  Kazutoshi KOJIMA ,  Tomohisa KATO

IPC: H01L29/16 ,  H01L29/739 ,  H01L29/66 ,  H01L21/02 ,  C30B23/02 ,  C30B29/36

Abstract: A high quality silicon carbide epitaxial wafer using a p-type silicon carbide single crystal substrate of low resistivity. The silicon carbide epitaxial wafer includes a p-type 4H—SiC single crystal substrate that has a first main surface having an off angle with respect to (0001) plane, and has a resistivity of less than 0.4 Ωcm, and a silicon carbide epitaxial layer that is disposed on the first main surface of the p-type 4H—SiC single crystal substrate, in which an off direction of the off angle is the direction.

公开(公告)号：US20160160386A1

公开(公告)日：2016-06-09

申请号：US14908307

申请日：2013-11-27

Applicant: TAIHEIYO CEMENT CORPORATION ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Kenta MASUDA ,  Kouki ICHITSUBO ,  Masakazu SUZUKI ,  Kiyoshi NONAKA ,  Tomohisa KATO ,  Hideaki TANAKA

IPC: C30B23/02 ,  C30B29/36 ,  C01B31/36

CPC classification number: C30B23/025 ,  C01B32/956 ,  C01P2004/50 ,  C01P2004/60 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C30B23/00 ,  C30B29/36

Abstract: A silicon carbide powder which, when used as a raw material in a sublimation recrystallization method, enables improvement in productivity of a silicon carbide single crystal by exhibiting a high sublimation rate and allowing a small amount of silicon carbide to remain without being sublimated, and enables an increase in size of the silicon carbide single crystal (for example, a single crystal wafer). The silicon carbide powder has a Blaine specific surface area of from 250 cm2/g to 1,000 cm2/g and a ratio of a silicon carbide powder having a particle size of more than 0.70 mm and 3.00 mm or less of 50 vol % or more with respect to a total amount of the silicon carbide powder. When a silicon carbide powder accommodated in a crucible is heated to be sublimated, a silicon carbide single crystal is formed on a seed crystal provided on an undersurface of a lid.

Abstract translation: 一种碳化硅粉末，当以升华重结晶方式用作原料时，通过展现高升华速度并且允许少量的碳化硅保持而不升华，能够提高碳化硅单晶的生产率，并使能 碳化硅单晶（例如，单晶晶片）的尺寸增加。 碳化硅粉末的Blaine比表面积为250cm 2 / g〜1000cm 2 / g，粒径大于0.70mm，3.00mm以下的碳化硅粉末的比例为50体积％以上，与 相对于碳化硅粉末的总量。 当容纳在坩埚中的碳化硅粉末被加热以升华时，在设置在盖的下表面上的晶种上形成碳化硅单晶。

公开(公告)号：US20200325595A1

公开(公告)日：2020-10-15

申请号：US16914506

申请日：2020-06-29

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  SHOWA DENKO K.K. ,  DENSO CORPORATION

Inventor： Kazuma ETO ,  Tomohisa KATO ,  Hiromasa SUO ,  Yuichiro TOKUDA

IPC: C30B23/06 ,  C30B29/36 ,  H01L21/02 ,  C30B23/00 ,  H01B1/04

Abstract: A method for producing a p-type 4H-SiC single crystal includes sublimating a nitrided aluminum raw material and a SiC raw material. Further, there is a stacking of a SiC single crystal, which is co-doped with aluminum and nitrogen, on one surface of a seed crystal.

公开(公告)号：US20190273136A1

公开(公告)日：2019-09-05

申请号：US16280083

申请日：2019-02-20

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Keiko MASUMOTO ,  Satoshi SEGAWA ,  Kazutoshi KOJIMA ,  Tomohisa KATO ,  Toshiyuki OHNO

IPC: H01L29/16 ,  H01L21/02

Abstract: A silicon carbide epitaxial wafer (10) of the present invention is a silicon carbide epitaxial wafer including: a silicon carbide substrate (1) and a silicon carbide layer (2) provided on a first principal plane (1A) of the silicon carbide substrate (1) and having a film thickness of 100 μm or more, wherein a warpage amount of the silicon carbide epitaxial wafer is −20 μm or more and 20 μm or less.

公开(公告)号：US20180274125A1

公开(公告)日：2018-09-27

申请号：US15763596

申请日：2016-09-29

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  SHOWA DENKO K.K.

Inventor： Kazuma ETO ,  Tomohisa KATO ,  Hiromasa SUO ,  Yuichiro TOKUDA

IPC: C30B23/06 ,  C30B29/36

CPC classification number: C30B23/06 ,  C30B29/36

Abstract: The present invention provides a p-type 4H—SiC single crystal, which is doped with both aluminum and nitrogen, and has a nitrogen concentration of 2.0×1019/cm3 or more.