摘要:
Provided are a pellicle film, a pellicle frame and a pellicle having a higher EUV transmittance. An exposure pattern plate capable of performing EUV lithography with the pellicle film, the pellicle frame or the pellicle, and a method for producing a semiconductor device, are provided. A pellicle film for exposure extendable over an opening of a support frame and having a thickness of 200 nm or less is provided. The film includes a carbon nanotube sheet. The carbon nanotube sheet includes bundles each including a plurality of carbon nanotubes, the bundles each have a diameter of 100 nm or shorter, and the bundles are aligned in a planar direction in the carbon nanotube sheet.
摘要:
The present invention answers the demands of power generating device and biosensor development and provides a flexible, free-standing type protein containing carbon nanotube film, and a sensor and power generating device each equipped with the carbon nanotube film as an electrode. According to the present invention a carbon nanotube free standing film is provided including a carbon nanotube aggregate formed by aggregating a plurality of carbon nanotubes, and a plurality of enzymes included between the plurality of carbon nanotubes. The carbon nanotube film may include a different protein to the enzyme and may include a surfactant agent between the plurality of carbon nanotubes.
摘要:
A CNT metal composite material is provided depositing a metal into a plurality of CNTs is provided including 3% by weight or more and 70% by weight or less of the CNTs, a region is arranged with the metal uniformly distributed in a scanning electron microscope image magnified ten thousand times and the length of the region is at least 1 μm, a signal of the metal and a signal of carbon are not localized in a specific area in a two-dimensional elemental analysis image magnified ten thousand times, and a length of a region uniformly distributing the signal of the metal and the signal of carbon uniformly distributed is at least 1 μm, an allowable current density is at 6×106 A/cm2 or more, and volume resistivity is 1×10−6 Ω·cm or more and 5×10−3 Ω·cm or less.
摘要:
Provided are a pellicle film, a pellicle frame and a pellicle having a higher EUV transmittance. An exposure pattern plate capable of performing EUV lithography with the pellicle film, the pellicle frame or the pellicle, and a method for producing a semiconductor device, are provided. A pellicle film for exposure extendable over an opening of a support frame and having a thickness of 200 nm or less is provided. The film includes a carbon nanotube sheet. The carbon nanotube sheet includes bundles each including a plurality of carbon nanotubes, the bundles each have a diameter of 100 nm or shorter, and the bundles are aligned in a planar direction in the carbon nanotube sheet.
摘要:
Provided are a pellicle film, a pellicle frame and a pellicle having a higher EUV transmittance. An exposure pattern plate capable of performing EUV lithography with the pellicle film, the pellicle frame or the pellicle, and a method for producing a semiconductor device, are provided. A pellicle film for exposure extendable over an opening of a support frame and having a thickness of 200 nm or less is provided. The film includes a carbon nanotube sheet. The carbon nanotube sheet includes bundles each including a plurality of carbon nanotubes, the bundles each have a diameter of 100 nm or shorter, and the bundles are aligned in a planar direction in the carbon nanotube sheet.
摘要:
A method of producing a carbon nanotube film structure having a substrate and a carbon nanotube layer, comprises a placing step of placing a carbon nanotube film comprising a plurality of carbon nanotubes aligned in one direction within a film plane on the substrate; and a densifying step of applying a densifying treatment to the carbon nanotube film thereby forming the carbon nanotube layer having the weight density of the carbon nanotube to 0.1 g/cm3 or more. Thus, a problem of island-like shrinkage caused while a highly densified CNT layer is being manufactured is solved, and a high-quality CNT film structure wherein the aligned CNT layer having a high density and uniform thickness is deposited on the substrate.
摘要翻译:一种具有基板和碳纳米管层的碳纳米管膜结构体的制造方法,其特征在于,包括:在基板的膜面内配置包含在一个方向上排列的多个碳纳米管的碳纳米管膜的放置工序; 以及对碳纳米管膜进行致密处理的致密化步骤,从而形成碳纳米管的重量密度为0.1g / cm 3以上的碳纳米管层。 因此,解决了在制造高度致密化的CNT层时引起的岛状收缩的问题,并且在基板上沉积具有高密度和均匀厚度的排列CNT层的高质量CNT膜结构。