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1.
公开(公告)号:US20170183553A1
公开(公告)日:2017-06-29
申请号:US15314789
申请日:2015-05-21
发明人: Toru UJIHARA , Yukihisa TAKEUCHI , Mingyu CHEN , Masashi NAGAYA
IPC分类号: C09K5/14 , C30B29/62 , C30B29/38 , C01B21/072 , C30B25/00
CPC分类号: C09K5/14 , C01B21/072 , C01B21/0722 , C01P2002/72 , C01P2004/01 , C01P2004/03 , C01P2004/04 , C01P2004/16 , C01P2006/32 , C30B25/005 , C30B29/38 , C30B29/62
摘要: An AlN crystal preparation method includes using at least one element excluding Si that fulfills the condition that a compound is not formed with either Al or N or the condition that a compound is formed with either Al or N but the standard free energy of formation of said compound is greater than the standard free energy of formation of AlN. In the preparation method, a composition including at least Al and the element is melted. Al vapor and nitrogen gas are reacted at a prescribed reaction temperature. AlN crystals are formed.
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2.
公开(公告)号:US20210009885A1
公开(公告)日:2021-01-14
申请号:US16886153
申请日:2020-05-28
发明人: Toru UJIHARA , Yukihisa TAKEUCHI , Mingyu CHEN , Masashi NAGAYA
IPC分类号: C09K5/14 , C30B29/38 , C30B29/62 , C01B21/072 , C30B25/00
摘要: A method for producing AlN crystals includes using at least one element, excluding Si, that satisfies a condition under which the element forms a compound with neither Al nor N or a condition under which the element forms a compound with any of Al and N provided that the standard free energy of formation of the compound is larger than that of AlN; melting a composition containing at least Al and the element; and reacting the Al vapor with nitrogen gas at a predetermined reaction temperature to produce AlN crystals.
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