公开(公告)号：US20250098550A1

公开(公告)日：2025-03-20

申请号：US18670767

申请日：2024-05-22

Applicant: NEC Corporation

Inventor： Katsumi KIKUCHI ,  Satoshi TSUKIYAMA ,  Tomohiro NISHIYAMA

IPC: H10N60/81 ,  H10N60/01

Abstract: A quantum device using a quantum state, including a quantum chip, a wiring component having a wiring layer, and a laminated substrate installed so that at least the surface of the wiring component on which the quantum chip is mounted is exposed, wherein a wiring layer of the laminated substrate and the wiring layer of the wiring component are connected by an integrated conductor pattern.

公开(公告)号：US20250081861A1

公开(公告)日：2025-03-06

申请号：US18752850

申请日：2024-06-25

Applicant: NEC Corporation

Inventor： Satoshi TSUKIYAMA ,  Katsumi Kikuchi

IPC: H10N60/81

Abstract: A quantum device includes a quantum chip, a first interposer which faces the quantum chip, and bumps provided at locations between the first interposer and the quantum chip, the bumps including first bumps and second bumps, wherein the first bumps contain at least a superconducting material, and the second bumps are made of a different material from the first bumps.