公开(公告)号：US20040051124A1

公开(公告)日：2004-03-18

申请号：US10657236

申请日：2003-09-09

申请人： NEC ELECTRONICS CORPORATION

发明人： Toru Kawasaki

IPC分类号： H01L029/80 ,  H01L031/112

CPC分类号： H01L27/14643 ,  H01L27/14623 ,  H01L27/1463

摘要： Shift register electrodes are formed in an imaging area and a peripheral area through use of a single layer of conductive film, and a thick insulating film is deposited over those electrodes and planarized. The thick insulating film overlying the shift register electrodes in the peripheral area is kept as it is and on the other hand, the thick insulating film overlying the shift register electrodes is etched to just fill gaps between the shift register electrodes with the film, thereby allowing a light shielding metal layer overlying the shift register electrodes in the peripheral area and insulating films sandwiched therebetween to be formed without discontinuity. Since metal interconnect lines in the peripheral area have a thick and planarized insulating film formed thereunder, parasitic capacitance between diffusion layers/electrodes and the metal interconnect lines can be reduced, leading to reduction in power consumption of image sensor.

摘要翻译： 移位寄存器电极通过使用单层导电膜形成在成像区域和外围区域中，并且在这些电极上沉积厚的绝缘膜并进行平坦化。 覆盖周边区域中的移位寄存器电极的厚绝缘膜保持原样，另一方面，覆盖移位寄存器电极的厚绝缘膜被蚀刻以仅填充移位寄存器电极与膜之间的间隙，从而允许 覆盖周边区域中的移位寄存器电极的遮光金属层和夹在其间的绝缘膜，而不间断地形成。 由于周边区域的金属布线具有在其上形成的厚且平坦化的绝缘膜，所以可以减小扩散层/电极和金属互连线之间的寄生电容，从而降低图像传感器的功耗。