公开(公告)号：US20220026151A1

公开(公告)日：2022-01-27

申请号：US17312110

申请日：2019-12-03

Applicant: NHK Spring Co., Ltd.

Inventor： Yoshihito Araki ,  Shuhei Morota ,  Toshihiko Hanamachi ,  Hibiki Yokoyama

IPC: F28D1/02 ,  F28D1/053 ,  F28F1/04 ,  F28F1/02 ,  F28F9/02

Abstract: A plate includes: a main body; a flow channel provided in the main body and configured to flow inert gas therein; a cover configured to cover a surface of the main body where the flow channel is formed; a buried member buried in an opening of the flow channel, the buried member including a buried portion fixed to the flow channel and made of dense ceramic, and a flow portion held by the buried portion and configured to let the inert gas flow from an inside to an outside of the main body, at least a part of the flow portion being made of porous ceramic; and a plurality of through holes provided in the flow portion. A ratio of a diameter of an outer circumference of the buried portion to a diameter of a smallest circle among circles including all of the through holes is 1.2 or higher.

公开(公告)号：US20210292911A1

公开(公告)日：2021-09-23

申请号：US17259609

申请日：2019-07-17

Applicant: NHK Spring Co., Ltd. ,  IZUMI TECHNO INC.

Inventor： Toshihiko Hanamachi ,  Shuhei Morota ,  Go Takahara ,  Masaru Takimoto ,  Hibiki Yokoyama ,  Hiroshi Mitsuda ,  Yoshihito Araki ,  Kengo Ajisawa

IPC: C23C28/04

Abstract: A member for a plasma processing device includes: an aluminum base material; and an oxide film formed on the aluminum base material and having a porous structure, the oxide film including a first oxide film formed on a surface of the aluminum base material, a second oxide film formed on the first oxide film, and a third oxide film formed on the second oxide film, wherein the first oxide film is harder than the second oxide film and the third oxide film, and a hole formed in each of the first oxide film, the second oxide film and the third oxide film is sealed.