公开(公告)号：US11489086B2

公开(公告)日：2022-11-01

申请号：US16908354

申请日：2020-06-22

Applicant: NICHIA CORPORATION

Inventor： Naoto Inoue ,  Minoru Yamamoto ,  Satoshi Okumura ,  Hiroki Okamoto ,  Hiroaki Tamemoto

IPC: H01L33/00

Abstract: A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.

公开(公告)号：US10388827B2

公开(公告)日：2019-08-20

申请号：US16149898

申请日：2018-10-02

Applicant: NICHIA CORPORATION

Inventor： Hiroki Okamoto ,  Hiroaki Tamemoto ,  Junya Narita

IPC: H01L21/00 ,  H01L33/00 ,  H01L21/78 ,  H01L21/304 ,  H01L21/683 ,  H01L29/04

Abstract: A method for manufacturing a semiconductor element is provided. The method includes providing a semiconductor wafer including a substrate and a semiconductor structure on the substrate, forming a cleavage starting portion in the semiconductor wafer, and dividing the semiconductor wafer into a plurality of semiconductor elements by transferring a pressing member on the semiconductor wafer in a state where the pressing member is pressed against the semiconductor wafer to separate the semiconductor wafer at the cleavage starting portion. The pressing member includes a tip portion to be pressed on the semiconductor wafer, and the tip portion has a spherical surface.

公开(公告)号：US10115857B2

公开(公告)日：2018-10-30

申请号：US15196787

申请日：2016-06-29

Applicant: NICHIA CORPORATION

Inventor： Hiroki Okamoto ,  Hiroaki Tamemoto ,  Junya Narita

IPC: H01L21/00 ,  H01L33/00 ,  H01L21/78 ,  H01L21/304 ,  H01L21/683 ,  H01L29/04

Abstract: A method for manufacturing a semiconductor element is provided. The method includes providing a semiconductor wafer including a substrate and a semiconductor structure on the substrate, forming a cleavage starting portion in the semiconductor wafer, and dividing the semiconductor wafer into a plurality of semiconductor elements by transferring a pressing member on the semiconductor wafer in a state where the pressing member is pressed against the semiconductor wafer to separate the semiconductor wafer at the cleavage starting portion. The pressing member includes a tip portion to be pressed on the semiconductor wafer, and the tip portion has a spherical surface.