公开(公告)号：US12218271B2

公开(公告)日：2025-02-04

申请号：US18507177

申请日：2023-11-13

Applicant: NICHIA CORPORATION

Inventor： Shun Kitahama ,  Yoshiki Inoue ,  Kazuhiro Nagamine ,  Junya Narita

IPC: H01L33/00 ,  H01L21/268 ,  H01L33/14 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

公开(公告)号：US11855238B2

公开(公告)日：2023-12-26

申请号：US17338446

申请日：2021-06-03

Applicant: NICHIA CORPORATION

Inventor： Shun Kitahama ,  Yoshiki Inoue ,  Kazuhiro Nagamine ,  Junya Narita

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/38 ,  H01L33/14 ,  H01L33/32 ,  H01L33/22 ,  H01L21/268

CPC classification number: H01L33/0095 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/44 ,  H01L21/268 ,  H01L33/22 ,  H01L2933/0025

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

公开(公告)号：US11056612B2

公开(公告)日：2021-07-06

申请号：US16677287

申请日：2019-11-07

Applicant: NICHIA CORPORATION

Inventor： Shun Kitahama ,  Yoshiki Inoue ,  Kazuhiro Nagamine ,  Junya Narita

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/14 ,  H01L33/32 ,  H01L21/268 ,  H01L33/22

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer containing an n-type impurity and located on the substrate, and a p-side nitride semiconductor layer containing a p-type impurity and located on the n-side nitride semiconductor layer, wherein a resistance of a peripheral portion of the p-side nitride semiconductor layer is higher than a resistance of an area inside of the peripheral portion in a top view, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; and first protective layer located on an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer.