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    Semiconductor light emitting element and method for producing the same
    2.
    发明授权
    Semiconductor light emitting element and method for producing the same 有权
    半导体发光元件及其制造方法

    公开(公告)号：US08969898B2

    公开(公告)日：2015-03-03

    申请号：US13772562

    申请日：2013-02-21

    申请人： Nichia Corporation

    发明人： Masahiko Onishi ,  Shun Kitahama

    IPC分类号： H01L33/00 ,  H01L33/40 ,  H01L33/38 ,  H01L33/44

    CPC分类号： H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/52 ,  H01L2933/0016

    摘要： In a method for producing a semiconductor light emitting device: a semiconductor lamination of first and second semiconductor layers having different conductive types is formed; a portion of the semiconductor lamination is removed to expose an area of a surface of the first semiconductor layer; a conductor layer connecting the first and second semiconductor layers is formed; a first electrode is formed on the exposed areas of the first semiconductor layer and a second electrode is formed on an upper surface of the second semiconductor layer; a barrier layer covering at least one of the first and second electrodes is formed; and a connection part in the conductor layer connecting the first and second semiconductor layers is removed.

    摘要翻译： 在制造半导体发光器件的方法中，形成具有不同导电类型的第一和第二半导体层的半导体层叠体; 去除半导体层叠的一部分以暴露第一半导体层的表面的区域; 形成连接第一和第二半导体层的导体层; 第一电极形成在第一半导体层的暴露区域上，第二电极形成在第二半导体层的上表面上; 形成覆盖第一和第二电极中的至少一个的阻挡层; 并且去除连接第一和第二半导体层的导体层中的连接部分。

    Method for manufacturing light-emitting element
    4.
    发明授权
    Method for manufacturing light-emitting element 有权

    公开(公告)号：US11735686B2

    公开(公告)日：2023-08-22

    申请号：US17113583

    申请日：2020-12-07

    申请人： NICHIA CORPORATION

    发明人： Yoshiki Inoue ,  Shun Kitahama ,  Yoshiyuki Aihara ,  Yoshiki Matsushita ,  Keisuke Higashitani

    IPC分类号： H01L33/00 ,  H01L33/50 ,  H01L33/22

    CPC分类号： H01L33/0095 ,  H01L33/007 ,  H01L33/22 ,  H01L33/507 ,  H01L2933/0041

    摘要： A method for manufacturing a light-emitting element includes dividing a semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region, a first surface being exposed from under the semiconductor structure in the exposed region; etching protrusions formed in the exposed region; bonding a light-transmitting body to a second surface so as to form a bonded body; forming a plurality of modified regions along the exposed region inside the substrate by irradiating a laser beam on the exposed region from the first surface side; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

    Light emitting element
    5.
    发明授权
    Light emitting element 有权

    公开(公告)号：US11056612B2

    公开(公告)日：2021-07-06

    申请号：US16677287

    申请日：2019-11-07

    申请人： NICHIA CORPORATION

    发明人： Shun Kitahama ,  Yoshiki Inoue ,  Kazuhiro Nagamine ,  Junya Narita

    IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/14 ,  H01L33/32 ,  H01L21/268 ,  H01L33/22

    摘要： A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer containing an n-type impurity and located on the substrate, and a p-side nitride semiconductor layer containing a p-type impurity and located on the n-side nitride semiconductor layer, wherein a resistance of a peripheral portion of the p-side nitride semiconductor layer is higher than a resistance of an area inside of the peripheral portion in a top view, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; and first protective layer located on an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer.

    Light-emitting element
    7.
    发明授权
    Light-emitting element 有权

    公开(公告)号：US11276801B2

    公开(公告)日：2022-03-15

    申请号：US16808577

    申请日：2020-03-04

    申请人： NICHIA CORPORATION

    发明人： Shun Kitahama

    IPC分类号： H01L33/40 ,  H01L33/42 ,  H01L33/38

    摘要： A light-emitting element includes: a semiconductor stacked body; an insulating film located on a p-type semiconductor layer; a p-side electrode located on the insulating film, the p-side electrode comprising a pad portion and an extension portion, the extension portion being continuous with the pad portion in a first direction; a light-transmissive conductive film located on the p-type semiconductor layer and on the insulating film, the light-transmissive conductive film having an opening that is continuous along the extension portion on the insulating film; and a reflective film located between the insulating film and the p-side electrode in the opening. The opening includes a first opening and a second opening. In the second direction, the light-transmissive conductive film is electrically connected to the extension portion of the p-side electrode at a portion adjacent to a region where the first opening is located.

    Light emitting element
    8.
    发明授权
    Light emitting element 有权

    公开(公告)号：US11063183B2

    公开(公告)日：2021-07-13

    申请号：US15045680

    申请日：2016-02-17

    申请人： NICHIA CORPORATION

    发明人： Keiji Emura ,  Shun Kitahama ,  Yasuo Miyoshi

    IPC分类号： H01L33/38 ,  H01L33/24 ,  H01L33/62

    摘要： A light emitting element includes a semiconductor layer which is in a planar shape of a polygon at least of a pentagon, a second electrode provided on the semiconductor layer, and a first electrode provided on the semiconductor layer and having a first pad portion, a first extension portion that extends from the first pad portion along an imaginary circle to which the first pad portion is tangent on the inside and whose center is at the same location as center of gravity of the polygon shape, and a second extension portion that extends along the imaginary circle from the first pad portion on the opposite side from the first extension portion.

    Light-emitting element with first and second light transmissive electrodes and method of manufacturing the same
    9.
    发明授权
    Light-emitting element with first and second light transmissive electrodes and method of manufacturing the same 有权

    公开(公告)号：US09941446B2

    公开(公告)日：2018-04-10

    申请号：US15388444

    申请日：2016-12-22

    申请人： NICHIA CORPORATION

    发明人： Shun Kitahama

    IPC分类号： H01L33/38 ,  H01L33/44 ,  H01L33/40 ,  H01L33/42

    CPC分类号： H01L33/38 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016

    摘要： A method of manufacturing a light-emitting element includes forming a light-transmissive insulating film on a portion of an upper surface of a semiconductor layered body; forming a first light-transmissive electrode to continuously cover the upper surface of the semiconductor layered body and an upper surface of the light-transmissive insulating film; heat-treating the first light-transmissive electrode, and subsequently forming a metal film in at least a portion of a region above the light-transmissive insulating film; forming a second light-transmissive electrode to continuously cover an upper surface of the metal film and an upper surface of the first light-transmissive electrode, the second light-transmissive electrode being electrically connected to the first light-transmissive electrode; and forming a pad electrode in a region where the metal film is disposed in a top view, such that at least a portion of the pad electrode is in contact with an upper surface of the second light-transmissive electrode.