公开(公告)号：US09761761B2

公开(公告)日：2017-09-12

申请号：US15041921

申请日：2016-02-11

Applicant: NICHIA CORPORATION

Inventor： Shinichi Daikoku ,  Shun Kitahama ,  Keiji Emura ,  Akihiro Nakamura

IPC: H01L33/38 ,  H01L33/42 ,  H01L33/14

CPC classification number: H01L33/38 ,  H01L33/145 ,  H01L33/42

Abstract: A light-emitting element includes a semiconductor stacked body, a light transmissive conductive film disposed on the semiconductor stacked body, the light transmissive conductive film including a plurality of through holes, insulation films disposed in the plurality of through holes, the plurality of through holes being disposed on the semiconductor stacked body; and a pad electrode disposed on the light transmissive conductive film and the insulation films.

公开(公告)号：US08969898B2

公开(公告)日：2015-03-03

申请号：US13772562

申请日：2013-02-21

Applicant: Nichia Corporation

Inventor： Masahiko Onishi ,  Shun Kitahama

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/52 ,  H01L2933/0016

Abstract: In a method for producing a semiconductor light emitting device: a semiconductor lamination of first and second semiconductor layers having different conductive types is formed; a portion of the semiconductor lamination is removed to expose an area of a surface of the first semiconductor layer; a conductor layer connecting the first and second semiconductor layers is formed; a first electrode is formed on the exposed areas of the first semiconductor layer and a second electrode is formed on an upper surface of the second semiconductor layer; a barrier layer covering at least one of the first and second electrodes is formed; and a connection part in the conductor layer connecting the first and second semiconductor layers is removed.

Abstract translation: 在制造半导体发光器件的方法中，形成具有不同导电类型的第一和第二半导体层的半导体层叠体; 去除半导体层叠的一部分以暴露第一半导体层的表面的区域; 形成连接第一和第二半导体层的导体层; 第一电极形成在第一半导体层的暴露区域上，第二电极形成在第二半导体层的上表面上; 形成覆盖第一和第二电极中的至少一个的阻挡层; 并且去除连接第一和第二半导体层的导体层中的连接部分。

公开(公告)号：US12243954B2

公开(公告)日：2025-03-04

申请号：US18343078

申请日：2023-06-28

Applicant: NICHIA CORPORATION

Inventor： Yoshiki Inoue ,  Shun Kitahama ,  Yoshiyuki Aihara ,  Yoshiki Matsushita ,  Keisuke Higashitani

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/50

Abstract: A method for manufacturing a light-emitting element includes: forming a semiconductor structure comprising a light-emitting layer on a first surface of a substrate, wherein the first surface comprising a plurality of protrusions and a second region; dividing the semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region of the substrate, wherein the second region is exposed from under the semiconductor structure in the exposed region; bonding a light-transmitting body to a second surface of the substrate that is opposite the first surface so as to form a bonded body, wherein the light-transmitting body comprises a fluorescer; forming a plurality of modified regions along the exposed region; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

公开(公告)号：US12224389B2

公开(公告)日：2025-02-11

申请号：US17466680

申请日：2021-09-03

Applicant: NICHIA CORPORATION

Inventor： Shun Kitahama ,  Yusuke Minato

IPC: H01L33/60 ,  H01L33/14 ,  H01L33/38 ,  H01L33/10

Abstract: A light-emitting element includes: a semiconductor layered structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer located between the first semiconductor layer and the second semiconductor layer; a reflective portion including an insulative first layer located on the first semiconductor layer, a second layer made of a metal material located on the first layer, and a third layer located on the second layer; an insulative layer covering the reflective portion; a light-transmissive conductive layer located on the insulative layer and on the first semiconductor layer; a first electrode located on a portion of the light-transmissive conductive layer that is above the reflective portion; and a second electrode located on the second semiconductor layer.

公开(公告)号：US12218271B2

公开(公告)日：2025-02-04

申请号：US18507177

申请日：2023-11-13

Applicant: NICHIA CORPORATION

Inventor： Shun Kitahama ,  Yoshiki Inoue ,  Kazuhiro Nagamine ,  Junya Narita

IPC: H01L33/00 ,  H01L21/268 ,  H01L33/14 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

公开(公告)号：US11855238B2

公开(公告)日：2023-12-26

申请号：US17338446

申请日：2021-06-03

Applicant: NICHIA CORPORATION

Inventor： Shun Kitahama ,  Yoshiki Inoue ,  Kazuhiro Nagamine ,  Junya Narita

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/38 ,  H01L33/14 ,  H01L33/32 ,  H01L33/22 ,  H01L21/268

CPC classification number: H01L33/0095 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/44 ,  H01L21/268 ,  H01L33/22 ,  H01L2933/0025

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

公开(公告)号：US11735686B2

公开(公告)日：2023-08-22

申请号：US17113583

申请日：2020-12-07

Applicant: NICHIA CORPORATION

Inventor： Yoshiki Inoue ,  Shun Kitahama ,  Yoshiyuki Aihara ,  Yoshiki Matsushita ,  Keisuke Higashitani

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/22

CPC classification number: H01L33/0095 ,  H01L33/007 ,  H01L33/22 ,  H01L33/507 ,  H01L2933/0041

Abstract: A method for manufacturing a light-emitting element includes dividing a semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region, a first surface being exposed from under the semiconductor structure in the exposed region; etching protrusions formed in the exposed region; bonding a light-transmitting body to a second surface so as to form a bonded body; forming a plurality of modified regions along the exposed region inside the substrate by irradiating a laser beam on the exposed region from the first surface side; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

公开(公告)号：US11056612B2

公开(公告)日：2021-07-06

申请号：US16677287

申请日：2019-11-07

Applicant: NICHIA CORPORATION

Inventor： Shun Kitahama ,  Yoshiki Inoue ,  Kazuhiro Nagamine ,  Junya Narita

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/14 ,  H01L33/32 ,  H01L21/268 ,  H01L33/22

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer containing an n-type impurity and located on the substrate, and a p-side nitride semiconductor layer containing a p-type impurity and located on the n-side nitride semiconductor layer, wherein a resistance of a peripheral portion of the p-side nitride semiconductor layer is higher than a resistance of an area inside of the peripheral portion in a top view, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; and first protective layer located on an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer.

公开(公告)号：US09837579B2

公开(公告)日：2017-12-05

申请号：US14604453

申请日：2015-01-23

Applicant: NICHIA CORPORATION

Inventor： Masahiko Onishi ,  Shun Kitahama

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/40 ,  H01L33/38 ,  H01L33/44 ,  H01L33/52

CPC classification number: H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/52 ,  H01L2933/0016

Abstract: In a method for producing a semiconductor light emitting device: a semiconductor lamination of first and second semiconductor layers having different conductive types is formed; a portion of the semiconductor lamination is removed to expose an area of a surface of the first semiconductor layer; a conductor layer connecting the first and second semiconductor layers is formed; a first electrode is formed on the exposed areas of the first semiconductor layer and a second electrode is formed on an upper surface of the second semiconductor layer; a barrier layer covering at least one of the first and second electrodes is formed; and a connection part in the conductor layer connecting the first and second semiconductor layers is removed.

公开(公告)号：US11276801B2

公开(公告)日：2022-03-15

申请号：US16808577

申请日：2020-03-04

Applicant: NICHIA CORPORATION

Inventor： Shun Kitahama

IPC: H01L33/40 ,  H01L33/42 ,  H01L33/38

Abstract: A light-emitting element includes: a semiconductor stacked body; an insulating film located on a p-type semiconductor layer; a p-side electrode located on the insulating film, the p-side electrode comprising a pad portion and an extension portion, the extension portion being continuous with the pad portion in a first direction; a light-transmissive conductive film located on the p-type semiconductor layer and on the insulating film, the light-transmissive conductive film having an opening that is continuous along the extension portion on the insulating film; and a reflective film located between the insulating film and the p-side electrode in the opening. The opening includes a first opening and a second opening. In the second direction, the light-transmissive conductive film is electrically connected to the extension portion of the p-side electrode at a portion adjacent to a region where the first opening is located.