公开(公告)号：US20200098568A1

公开(公告)日：2020-03-26

申请号：US16580945

申请日：2019-09-24

Applicant: NICHIA CORPORATION

Inventor： Takamasa SUNDA ,  Yoshinori FUKUI ,  Shinya ASAKAWA

IPC: H01L21/288 ,  H01L23/00 ,  C25D7/12 ,  C25D5/02 ,  C25D3/38

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist defining an opening on an upper surface of a semiconductor wafer; and forming an electrode in the opening using a plating technique, in which the step of forming the electrode includes forming a first plated layer at a first current density such that the first plated layer has a first thickness, and forming a second plated layer on an upper surface of the first plated layer at a second current density higher than the first current density such that the second plated layer has a second thickness greater than the first thickness.