公开(公告)号：US10910536B2

公开(公告)日：2021-02-02

申请号：US16287545

申请日：2019-02-27

Applicant: NICHIA CORPORATION

Inventor： Keiji Emura ,  Takao Misaki ,  Takamasa Sunda ,  Yoshinori Fukui

IPC: H01L33/62 ,  H01L27/15 ,  H01L33/64 ,  H01L33/44 ,  H01L33/40

Abstract: The light emitting element includes: first and second light emitting cells each including an n-side semiconductor layer, an active layer and a p-side semiconductor layer; a first insulating film covering the first and second light emitting cells, and provided with first p-side and first n-side openings; a wiring electrode connected to the first light emitting cell at the first n-side opening, and connected to the second light emitting cell at the first p-side opening; a first electrode connected to the first light emitting cell; a second electrode connected to the second light emitting cell; a second insulating film provided with a second p-side opening formed above the first electrode, a second n-side opening formed above the second electrode, and a third opening formed above the wiring electrode; a first external connection portion connected to the first electrode; and a second external connection portion connected to the second electrode.

公开(公告)号：US11145513B2

公开(公告)日：2021-10-12

申请号：US16580945

申请日：2019-09-24

Applicant: NICHIA CORPORATION

Inventor： Takamasa Sunda ,  Yoshinori Fukui ,  Shinya Asakawa

IPC: H01L21/228 ,  C25D5/02 ,  H01L21/288 ,  H01L23/00 ,  C25D3/38 ,  C25D7/12

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist defining an opening on an upper surface of a semiconductor wafer; and forming an electrode in the opening using a plating technique, in which the step of forming the electrode includes forming a first plated layer at a first current density such that the first plated layer has a first thickness, and forming a second plated layer on an upper surface of the first plated layer at a second current density higher than the first current density such that the second plated layer has a second thickness greater than the first thickness.

公开(公告)号：US10825955B2

公开(公告)日：2020-11-03

申请号：US16362481

申请日：2019-03-22

Applicant: NICHIA CORPORATION

Inventor： Yoshinori Fukui ,  Yoshiki Matsushita ,  Akinori Kishi ,  Takaaki Oguri

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/62

Abstract: A method for manufacturing a light-emitting element includes: a preparation process including preparing a semiconductor stacked body that includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer, the first semiconductor layer including a semiconductor of a first conductivity type, the second semiconductor layer including a semiconductor of a second conductivity type; a first layer formation process including forming a first layer on the first semiconductor layer, the first layer being made of an insulating material; a removal process including removing a portion of the first semiconductor layer and a portion of the first layer; a processing process including introducing oxygen into a portion of the first semiconductor layer that includes a first surface formed in the removal process, the introducing being performed by, after the removal process, processing the semiconductor stacked body in an atmosphere including oxygen.

公开(公告)号：US20190296192A1

公开(公告)日：2019-09-26

申请号：US16362481

申请日：2019-03-22

Applicant: NICHIA CORPORATION

Inventor： Yoshinori Fukui ,  Yoshiki Matsushita ,  Akinori Kishi ,  Takaaki Oguri

IPC: H01L33/38 ,  H01L33/40

Abstract: A method for manufacturing a light-emitting element includes: a preparation process including preparing a semiconductor stacked body that includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer, the first semiconductor layer including a semiconductor of a first conductivity type, the second semiconductor layer including a semiconductor of a second conductivity type; a first layer formation process including forming a first layer on the first semiconductor layer, the first layer being made of an insulating material; a removal process including removing a portion of the first semiconductor layer and a portion of the first layer; a processing process including introducing oxygen into a portion of the first semiconductor layer that includes a first surface formed in the removal process, the introducing being performed by, after the removal process, processing the semiconductor stacked body in an atmosphere including oxygen.