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公开(公告)号：US11372307B2
公开(公告)日：2022-06-28
申请号：US16970283
申请日：2019-03-06
发明人： Nobuhiro Kikuchi , Eiichi Yamada , Josuke Ozaki , Yoshihiro Ogiso , Yuta Ueda , Shinsuke Nakano
摘要： Provided is an optical modulator having an optical modulation high frequency line through which a high frequency electrical signal can be efficiently input to an optical modulation region and which is in a broadband. High frequency lines of an optical modulator, that is, an input high frequency line, an optical modulation high frequency line, and an output high frequency line have a line configuration in which each of the input high frequency line and the output high frequency line is divided into a plurality of segments, and adjacent segments of the plurality of the segments have different characteristic impedances and propagation constants. The input high frequency line and the output high frequency line may be implemented by changing a width or a thickness of a signal electrode formed on a dielectric forming a micro-strip line between adjacent segments. The characteristic impedances and the propagation constants may be changed by changing a dielectric constant of the dielectric instead of changing the width or the thickness of the signal electrode.
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公开(公告)号：US20210080795A1
公开(公告)日：2021-03-18
申请号：US16970283
申请日：2019-03-06
发明人： Nobuhiro Kikuchi , Eiichi Yamada , Josuke Ozaki , Yoshihiro Ogiso , Yuta Ueda , Shinsuke Nakano
摘要： Provided is an optical modulator having an optical modulation high frequency line through which a high frequency electrical signal can be efficiently input to an optical modulation region and which is in a broadband. High frequency lines of an optical modulator, that is, an input high frequency line, an optical modulation high frequency line, and an output high frequency line have a line configuration in which each of the input high frequency line and the output high frequency line is divided into a plurality of segments, and adjacent segments of the plurality of the segments have different characteristic impedances and propagation constants. The input high frequency line and the output high frequency line may be implemented by changing a width or a thickness of a signal electrode formed on a dielectric forming a micro-strip line between adjacent segments. The characteristic impedances and the propagation constants may be changed by changing a dielectric constant of the dielectric instead of changing the width or the thickness of the signal electrode.
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公开(公告)号：US20180175474A1
公开(公告)日：2018-06-21
申请号：US15737214
申请日：2016-06-24
发明人： Nobuhiro Kikuchi , Eiichi Yamada , Yoshihiro Ogiso , Josuke Ozaki
摘要： This invention provides a high-frequency line adopting a structure to suppress an impedance variation and occurrence of an excessive power loss in high-frequency wiring having intersection with an optical waveguide. A high-frequency line is a microstrip line which has a basic configuration of stacking a ground electrode, a dielectric layer, and a signal electrode in this order on a SI-InP substrate. In addition, as shown in a transverse sectional view, an optical waveguide core made of InP-based semiconductor intersects with the high-frequency line in a crossing manner. A width of the signal electrode is partially increased in a certain region covering the intersection with the optical waveguide along a propagating direction of the high-frequency line. In the microstrip line, the width of the signal electrode is partially increased from w1 to w2, and characteristic impedance is thus reduced as compared to one with the uniform width w1.
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公开(公告)号：US10522892B2
公开(公告)日：2019-12-31
申请号：US15737214
申请日：2016-06-24
发明人： Nobuhiro Kikuchi , Eiichi Yamada , Yoshihiro Ogiso , Josuke Ozaki
摘要： This invention provides a high-frequency line adopting a structure to suppress an impedance variation and occurrence of an excessive power loss in high-frequency wiring having intersection with an optical waveguide. A high-frequency line is a microstrip line which has a basic configuration of stacking a ground electrode, a dielectric layer, and a signal electrode in this order on a SI-InP substrate. In addition, as shown in a transverse sectional view, an optical waveguide core made of InP-based semiconductor intersects with the high-frequency line in a crossing manner. A width of the signal electrode is partially increased in a certain region covering the intersection with the optical waveguide along a propagating direction of the high-frequency line. In the microstrip line, the width of the signal electrode is partially increased from w1 to w2, and characteristic impedance is thus reduced as compared to one with the uniform width w1.
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